JP7802562B2 - Ｆｐｄ用のフォトマスク、ｆｐｄ用のフォトマスクにおける位置計測用マークの形成方法及びｆｐｄ用のフォトマスクの製造方法 - Google Patents

Ｆｐｄ用のフォトマスク、ｆｐｄ用のフォトマスクにおける位置計測用マークの形成方法及びｆｐｄ用のフォトマスクの製造方法

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Publication number
JP7802562B2
JP7802562B2 JP2022018326A JP2022018326A JP7802562B2 JP 7802562 B2 JP7802562 B2 JP 7802562B2 JP 2022018326 A JP2022018326 A JP 2022018326A JP 2022018326 A JP2022018326 A JP 2022018326A JP 7802562 B2 JP7802562 B2 JP 7802562B2
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JP
Japan
Prior art keywords
position measurement
photomask
film
measurement mark
fpd
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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JP2022018326A
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English (en)
Japanese (ja)
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JP2023115863A (ja
JP2023115863A5 (https=
Inventor
昌典 橋本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Electronics Co Ltd
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SK Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SK Electronics Co Ltd filed Critical SK Electronics Co Ltd
Priority to JP2022018326A priority Critical patent/JP7802562B2/ja
Priority to KR1020230004397A priority patent/KR102923641B1/ko
Priority to CN202310086669.6A priority patent/CN116577961A/zh
Priority to TW112103767A priority patent/TWI866050B/zh
Publication of JP2023115863A publication Critical patent/JP2023115863A/ja
Publication of JP2023115863A5 publication Critical patent/JP2023115863A5/ja
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Publication of JP7802562B2 publication Critical patent/JP7802562B2/ja
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2022018326A 2022-02-08 2022-02-08 Ｆｐｄ用のフォトマスク、ｆｐｄ用のフォトマスクにおける位置計測用マークの形成方法及びｆｐｄ用のフォトマスクの製造方法 Active JP7802562B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2022018326A JP7802562B2 (ja) 2022-02-08 2022-02-08 Ｆｐｄ用のフォトマスク、ｆｐｄ用のフォトマスクにおける位置計測用マークの形成方法及びｆｐｄ用のフォトマスクの製造方法
KR1020230004397A KR102923641B1 (ko) 2022-02-08 2023-01-12 Fpd용의 포토마스크, fpd용의 포토마스크에 있어서의 위치 계측용 마크의 형성 방법 및 fpd용의 포토마스크의 제조 방법
CN202310086669.6A CN116577961A (zh) 2022-02-08 2023-01-18 Fpd用光掩模、fpd用光掩模的位置测量用标记的形成方法以及fpd用光掩模的制造方法
TW112103767A TWI866050B (zh) 2022-02-08 2023-02-03 平板顯示器用光罩、平板顯示器用光罩的位置測量用標記的形成方法及平板顯示器用光罩的製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2022018326A JP7802562B2 (ja) 2022-02-08 2022-02-08 Ｆｐｄ用のフォトマスク、ｆｐｄ用のフォトマスクにおける位置計測用マークの形成方法及びｆｐｄ用のフォトマスクの製造方法

Publications (3)

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JP2023115863A JP2023115863A (ja) 2023-08-21
JP2023115863A5 JP2023115863A5 (https=) 2025-02-06
JP7802562B2 true JP7802562B2 (ja) 2026-01-20

Family

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JP2022018326A Active JP7802562B2 (ja) 2022-02-08 2022-02-08 Ｆｐｄ用のフォトマスク、ｆｐｄ用のフォトマスクにおける位置計測用マークの形成方法及びｆｐｄ用のフォトマスクの製造方法

Country Status (4)

Country Link
JP (1) JP7802562B2 (https=)
KR (1) KR102923641B1 (https=)
CN (1) CN116577961A (https=)
TW (1) TWI866050B (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117452778B (zh) * 2023-11-08 2024-12-13 深圳清溢微电子有限公司 掩膜版二次曝光自动对位方法、装置

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000077308A (ja) 1998-08-31 2000-03-14 Mitsubishi Electric Corp 半導体装置の製造方法
JP2000338649A (ja) 1999-05-27 2000-12-08 Kemutetsuku Japan:Kk プリント基板の製造装置および製造方法
JP2001201844A (ja) 2000-01-21 2001-07-27 Hitachi Ltd 半導体集積回路装置の製造方法およびフォトマスクの製造方法
JP2007248802A (ja) 2006-03-16 2007-09-27 Hoya Corp パターン形成方法及びグレートーンマスクの製造方法
JP2010122349A (ja) 2008-11-18 2010-06-03 Dainippon Printing Co Ltd 階調マスク
US20120141926A1 (en) 2010-12-03 2012-06-07 Shenzhen China Star Optoelectronics Technology Co., Ltd. Lcd panel photolithography process and mask
US20120225374A1 (en) 2011-03-02 2012-09-06 Kabushiki Kaisha Toshiba Photomask and method for manufacturing the same
JP2017102304A (ja) 2015-12-02 2017-06-08 株式会社エスケーエレクトロニクス アライメントパターンを有するフォトマスクブランクスならびにそれを用いたフォトマスクおよびその製造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3372685B2 (ja) * 1994-12-15 2003-02-04 キヤノン株式会社 半導体露光装置
JPH11288076A (ja) * 1998-04-02 1999-10-19 Toshiba Corp 位相シフトマスク及びその製造方法並びに重ね合わせ精度測定用マークを用いた測定方法
TW519701B (en) * 2001-12-28 2003-02-01 United Microelectronics Corp Overlay mark structure and its measurement application
JP4604443B2 (ja) * 2002-12-19 2011-01-05 株式会社ニコン 繋ぎ合わせ測定装置および分割露光用マスク
WO2005116577A1 (ja) * 2004-05-28 2005-12-08 Nikon Corporation 結像光学系の調整方法、結像装置、位置ずれ検出装置、マ－ク識別装置及びエッジ位置検出装置
TWI271811B (en) * 2005-01-13 2007-01-21 Ind Tech Res Inst Overlay measurement target
JP5326282B2 (ja) * 2008-01-10 2013-10-30 富士通セミコンダクター株式会社 半導体装置とその製造方法、及び露光用マスク
JP2009282386A (ja) * 2008-05-23 2009-12-03 Toyota Motor Corp フォトマスクと半導体チップの製造方法
US11048159B2 (en) * 2016-03-31 2021-06-29 Hoya Corporation Method for manufacturing reflective mask blank, reflective mask blank, method for manufacturing reflective mask, reflective mask, and method for manufacturing semiconductor device
CN109468593A (zh) * 2018-12-04 2019-03-15 京东方科技集团股份有限公司 一种显示面板的制备方法、显示面板及蒸镀装置

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000077308A (ja) 1998-08-31 2000-03-14 Mitsubishi Electric Corp 半導体装置の製造方法
JP2000338649A (ja) 1999-05-27 2000-12-08 Kemutetsuku Japan:Kk プリント基板の製造装置および製造方法
JP2001201844A (ja) 2000-01-21 2001-07-27 Hitachi Ltd 半導体集積回路装置の製造方法およびフォトマスクの製造方法
JP2007248802A (ja) 2006-03-16 2007-09-27 Hoya Corp パターン形成方法及びグレートーンマスクの製造方法
JP2010122349A (ja) 2008-11-18 2010-06-03 Dainippon Printing Co Ltd 階調マスク
US20120141926A1 (en) 2010-12-03 2012-06-07 Shenzhen China Star Optoelectronics Technology Co., Ltd. Lcd panel photolithography process and mask
US20120225374A1 (en) 2011-03-02 2012-09-06 Kabushiki Kaisha Toshiba Photomask and method for manufacturing the same
JP2012181426A (ja) 2011-03-02 2012-09-20 Toshiba Corp フォトマスク及びその製造方法
JP2017102304A (ja) 2015-12-02 2017-06-08 株式会社エスケーエレクトロニクス アライメントパターンを有するフォトマスクブランクスならびにそれを用いたフォトマスクおよびその製造方法

Also Published As

Publication number Publication date
JP2023115863A (ja) 2023-08-21
KR20230120090A (ko) 2023-08-16
KR102923641B1 (ko) 2026-02-05
CN116577961A (zh) 2023-08-11
TW202332984A (zh) 2023-08-16
TWI866050B (zh) 2024-12-11

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