CN116577961A - Fpd用光掩模、fpd用光掩模的位置测量用标记的形成方法以及fpd用光掩模的制造方法 - Google Patents

Fpd用光掩模、fpd用光掩模的位置测量用标记的形成方法以及fpd用光掩模的制造方法 Download PDF

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Publication number
CN116577961A
CN116577961A CN202310086669.6A CN202310086669A CN116577961A CN 116577961 A CN116577961 A CN 116577961A CN 202310086669 A CN202310086669 A CN 202310086669A CN 116577961 A CN116577961 A CN 116577961A
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CN
China
Prior art keywords
photomask
mark
film
position measurement
fpd
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202310086669.6A
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English (en)
Chinese (zh)
Inventor
桥本昌典
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Electronics Co Ltd
Original Assignee
SK Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SK Electronics Co Ltd filed Critical SK Electronics Co Ltd
Publication of CN116577961A publication Critical patent/CN116577961A/zh
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CN202310086669.6A 2022-02-08 2023-01-18 Fpd用光掩模、fpd用光掩模的位置测量用标记的形成方法以及fpd用光掩模的制造方法 Pending CN116577961A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022018326A JP7802562B2 (ja) 2022-02-08 2022-02-08 Ｆｐｄ用のフォトマスク、ｆｐｄ用のフォトマスクにおける位置計測用マークの形成方法及びｆｐｄ用のフォトマスクの製造方法
JP2022-018326 2022-02-08

Publications (1)

Publication Number Publication Date
CN116577961A true CN116577961A (zh) 2023-08-11

Family

ID=87540130

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202310086669.6A Pending CN116577961A (zh) 2022-02-08 2023-01-18 Fpd用光掩模、fpd用光掩模的位置测量用标记的形成方法以及fpd用光掩模的制造方法

Country Status (4)

Country Link
JP (1) JP7802562B2 (https=)
KR (1) KR102923641B1 (https=)
CN (1) CN116577961A (https=)
TW (1) TWI866050B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117452778A (zh) * 2023-11-08 2024-01-26 深圳清溢微电子有限公司 掩膜版二次曝光自动对位方法、装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004200508A (ja) * 2002-12-19 2004-07-15 Nikon Corp 繋ぎ合わせ測定装置および分割露光用マスク
JP2009164521A (ja) * 2008-01-10 2009-07-23 Fujitsu Microelectronics Ltd 半導体装置とその製造方法、及び露光用マスク
JP2009282386A (ja) * 2008-05-23 2009-12-03 Toyota Motor Corp フォトマスクと半導体チップの製造方法

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JP3372685B2 (ja) * 1994-12-15 2003-02-04 キヤノン株式会社 半導体露光装置
JPH11288076A (ja) * 1998-04-02 1999-10-19 Toshiba Corp 位相シフトマスク及びその製造方法並びに重ね合わせ精度測定用マークを用いた測定方法
JP2000077308A (ja) * 1998-08-31 2000-03-14 Mitsubishi Electric Corp 半導体装置の製造方法
JP3035297B1 (ja) * 1999-05-27 2000-04-24 株式会社ケムテックジャパン プリント基板の製造装置および製造方法
JP2001201844A (ja) * 2000-01-21 2001-07-27 Hitachi Ltd 半導体集積回路装置の製造方法およびフォトマスクの製造方法
TW519701B (en) * 2001-12-28 2003-02-01 United Microelectronics Corp Overlay mark structure and its measurement application
WO2005116577A1 (ja) * 2004-05-28 2005-12-08 Nikon Corporation 結像光学系の調整方法、結像装置、位置ずれ検出装置、マ－ク識別装置及びエッジ位置検出装置
TWI271811B (en) * 2005-01-13 2007-01-21 Ind Tech Res Inst Overlay measurement target
JP2007248802A (ja) * 2006-03-16 2007-09-27 Hoya Corp パターン形成方法及びグレートーンマスクの製造方法
JP5182029B2 (ja) * 2008-11-18 2013-04-10 大日本印刷株式会社 階調マスク
CN102096328B (zh) * 2010-12-03 2012-11-21 深圳市华星光电技术有限公司 液晶面板的曝光工序及其掩膜
JP5306391B2 (ja) * 2011-03-02 2013-10-02 株式会社東芝 フォトマスク
JP6718225B2 (ja) * 2015-12-02 2020-07-08 株式会社エスケーエレクトロニクス フォトマスクおよびその製造方法
US11048159B2 (en) * 2016-03-31 2021-06-29 Hoya Corporation Method for manufacturing reflective mask blank, reflective mask blank, method for manufacturing reflective mask, reflective mask, and method for manufacturing semiconductor device
CN109468593A (zh) * 2018-12-04 2019-03-15 京东方科技集团股份有限公司 一种显示面板的制备方法、显示面板及蒸镀装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004200508A (ja) * 2002-12-19 2004-07-15 Nikon Corp 繋ぎ合わせ測定装置および分割露光用マスク
JP2009164521A (ja) * 2008-01-10 2009-07-23 Fujitsu Microelectronics Ltd 半導体装置とその製造方法、及び露光用マスク
JP2009282386A (ja) * 2008-05-23 2009-12-03 Toyota Motor Corp フォトマスクと半導体チップの製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117452778A (zh) * 2023-11-08 2024-01-26 深圳清溢微电子有限公司 掩膜版二次曝光自动对位方法、装置

Also Published As

Publication number Publication date
JP2023115863A (ja) 2023-08-21
KR20230120090A (ko) 2023-08-16
KR102923641B1 (ko) 2026-02-05
TW202332984A (zh) 2023-08-16
TWI866050B (zh) 2024-12-11
JP7802562B2 (ja) 2026-01-20

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