KR102830236B1 - 처리 장치 및 처리 방법 - Google Patents
처리 장치 및 처리 방법 Download PDFInfo
- Publication number
- KR102830236B1 KR102830236B1 KR1020227004883A KR20227004883A KR102830236B1 KR 102830236 B1 KR102830236 B1 KR 102830236B1 KR 1020227004883 A KR1020227004883 A KR 1020227004883A KR 20227004883 A KR20227004883 A KR 20227004883A KR 102830236 B1 KR102830236 B1 KR 102830236B1
- Authority
- KR
- South Korea
- Prior art keywords
- modified layer
- processing
- wafer
- layer
- laser light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
-
- H01L21/304—
-
- H01L21/67092—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
- H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
- H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic materials other than metals or composite materials
- B23K2103/56—Inorganic materials other than metals or composite materials being semiconducting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Laser Beam Processing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020257022061A KR20250107966A (ko) | 2019-07-18 | 2020-07-09 | 처리 장치 및 처리 방법 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2019-133087 | 2019-07-18 | ||
| JP2019133087 | 2019-07-18 | ||
| PCT/JP2020/026878 WO2021010284A1 (ja) | 2019-07-18 | 2020-07-09 | 処理装置及び処理方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020257022061A Division KR20250107966A (ko) | 2019-07-18 | 2020-07-09 | 처리 장치 및 처리 방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20220035442A KR20220035442A (ko) | 2022-03-22 |
| KR102830236B1 true KR102830236B1 (ko) | 2025-07-07 |
Family
ID=74210785
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020227004883A Active KR102830236B1 (ko) | 2019-07-18 | 2020-07-09 | 처리 장치 및 처리 방법 |
| KR1020257022061A Pending KR20250107966A (ko) | 2019-07-18 | 2020-07-09 | 처리 장치 및 처리 방법 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020257022061A Pending KR20250107966A (ko) | 2019-07-18 | 2020-07-09 | 처리 장치 및 처리 방법 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US12070820B2 (https=) |
| JP (1) | JP7344965B2 (https=) |
| KR (2) | KR102830236B1 (https=) |
| CN (2) | CN114096372B (https=) |
| TW (1) | TWI857094B (https=) |
| WO (1) | WO2021010284A1 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI877184B (zh) * | 2019-07-18 | 2025-03-21 | 日商東京威力科創股份有限公司 | 處理裝置及處理方法 |
| TWI855139B (zh) * | 2019-10-28 | 2024-09-11 | 日商東京威力科創股份有限公司 | 基板處理方法及基板處理系統 |
| JP7558044B2 (ja) * | 2020-11-30 | 2024-09-30 | 株式会社ディスコ | ウェーハの加工方法 |
| JP2024039367A (ja) * | 2022-09-09 | 2024-03-22 | 株式会社ディスコ | ウエーハの加工方法 |
| JP2024042807A (ja) * | 2022-09-16 | 2024-03-29 | キオクシア株式会社 | レーザー加工装置、レーザー剥離方法および半導体装置の製造方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013049161A (ja) | 2011-08-30 | 2013-03-14 | Hamamatsu Photonics Kk | 加工対象物切断方法 |
| JP2016043401A (ja) | 2014-08-26 | 2016-04-04 | 信越ポリマー株式会社 | 基板加工方法及び基板 |
| WO2019044588A1 (ja) | 2017-09-04 | 2019-03-07 | リンテック株式会社 | 薄型化板状部材の製造方法、及び薄型化板状部材の製造装置 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4659300B2 (ja) * | 2000-09-13 | 2011-03-30 | 浜松ホトニクス株式会社 | レーザ加工方法及び半導体チップの製造方法 |
| JP4509578B2 (ja) * | 2004-01-09 | 2010-07-21 | 浜松ホトニクス株式会社 | レーザ加工方法及びレーザ加工装置 |
| CN1925945A (zh) * | 2004-03-05 | 2007-03-07 | 奥林巴斯株式会社 | 激光加工装置 |
| JP2006108532A (ja) * | 2004-10-08 | 2006-04-20 | Disco Abrasive Syst Ltd | ウエーハの研削方法 |
| JP5446631B2 (ja) * | 2009-09-10 | 2014-03-19 | アイシン精機株式会社 | レーザ加工方法及びレーザ加工装置 |
| JP5410250B2 (ja) * | 2009-11-25 | 2014-02-05 | 浜松ホトニクス株式会社 | レーザ加工方法及びレーザ加工装置 |
| JP5707889B2 (ja) * | 2010-11-16 | 2015-04-30 | 株式会社東京精密 | 半導体基板の切断方法及び半導体基板の切断装置 |
| JP5771391B2 (ja) * | 2010-12-22 | 2015-08-26 | 浜松ホトニクス株式会社 | レーザ加工方法 |
| KR102215918B1 (ko) * | 2013-03-27 | 2021-02-16 | 하마마츠 포토닉스 가부시키가이샤 | 레이저 가공 장치 및 레이저 가공 방법 |
| JP6037925B2 (ja) * | 2013-04-12 | 2016-12-07 | 株式会社ディスコ | レーザー加工装置 |
| JP6341639B2 (ja) * | 2013-08-01 | 2018-06-13 | 株式会社ディスコ | 加工装置 |
| JP2015032690A (ja) | 2013-08-02 | 2015-02-16 | 株式会社ディスコ | 積層ウェーハの加工方法 |
| JP6516184B2 (ja) | 2015-05-19 | 2019-05-22 | パナソニックIpマネジメント株式会社 | 脆性基板のスライス装置及び方法 |
| JP6482389B2 (ja) * | 2015-06-02 | 2019-03-13 | 株式会社ディスコ | ウエーハの生成方法 |
| JP2017053775A (ja) * | 2015-09-10 | 2017-03-16 | 東レエンジニアリング株式会社 | 光透過性を備えた物体内部の撮像装置および検査装置 |
| JP6540430B2 (ja) * | 2015-09-28 | 2019-07-10 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
| JP6818273B2 (ja) * | 2016-05-06 | 2021-01-20 | 国立大学法人埼玉大学 | 基板加工方法 |
| JP6844901B2 (ja) * | 2017-05-26 | 2021-03-17 | 株式会社ディスコ | レーザ加工装置及びレーザ加工方法 |
| JP6935314B2 (ja) * | 2017-12-01 | 2021-09-15 | 株式会社ディスコ | レーザー加工方法 |
| KR102669504B1 (ko) * | 2018-04-09 | 2024-05-28 | 도쿄엘렉트론가부시키가이샤 | 레이저 가공 장치, 레이저 가공 시스템 및 레이저 가공 방법 |
-
2020
- 2020-07-06 TW TW109122701A patent/TWI857094B/zh active
- 2020-07-09 CN CN202080050598.9A patent/CN114096372B/zh active Active
- 2020-07-09 KR KR1020227004883A patent/KR102830236B1/ko active Active
- 2020-07-09 WO PCT/JP2020/026878 patent/WO2021010284A1/ja not_active Ceased
- 2020-07-09 KR KR1020257022061A patent/KR20250107966A/ko active Pending
- 2020-07-09 US US17/627,707 patent/US12070820B2/en active Active
- 2020-07-09 JP JP2021533017A patent/JP7344965B2/ja active Active
- 2020-07-09 CN CN202410265900.2A patent/CN118268740A/zh active Pending
-
2024
- 2024-07-17 US US18/775,234 patent/US20240367266A1/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013049161A (ja) | 2011-08-30 | 2013-03-14 | Hamamatsu Photonics Kk | 加工対象物切断方法 |
| JP2016043401A (ja) | 2014-08-26 | 2016-04-04 | 信越ポリマー株式会社 | 基板加工方法及び基板 |
| WO2019044588A1 (ja) | 2017-09-04 | 2019-03-07 | リンテック株式会社 | 薄型化板状部材の製造方法、及び薄型化板状部材の製造装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114096372B (zh) | 2024-03-22 |
| KR20250107966A (ko) | 2025-07-14 |
| TWI857094B (zh) | 2024-10-01 |
| WO2021010284A1 (ja) | 2021-01-21 |
| US20240367266A1 (en) | 2024-11-07 |
| KR20220035442A (ko) | 2022-03-22 |
| JPWO2021010284A1 (https=) | 2021-01-21 |
| US20220250191A1 (en) | 2022-08-11 |
| CN114096372A (zh) | 2022-02-25 |
| JP7344965B2 (ja) | 2023-09-14 |
| TW202116468A (zh) | 2021-05-01 |
| CN118268740A (zh) | 2024-07-02 |
| US12070820B2 (en) | 2024-08-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
St.27 status event code: A-0-1-A10-A15-nap-PA0105 |
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| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
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| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
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| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
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| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
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| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
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| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
St.27 status event code: A-1-2-D10-D22-exm-PE0701 |
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| GRNT | Written decision to grant | ||
| PA0104 | Divisional application for international application |
St.27 status event code: A-0-1-A10-A16-div-PA0104 |
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| PR0701 | Registration of establishment |
St.27 status event code: A-2-4-F10-F11-exm-PR0701 |
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| PR1002 | Payment of registration fee |
St.27 status event code: A-2-2-U10-U12-oth-PR1002 Fee payment year number: 1 |
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| PG1601 | Publication of registration |
St.27 status event code: A-4-4-Q10-Q13-nap-PG1601 |
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| Q13 | Ip right document published |
Free format text: ST27 STATUS EVENT CODE: A-4-4-Q10-Q13-NAP-PG1601 (AS PROVIDED BY THE NATIONAL OFFICE) |
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| P22-X000 | Classification modified |
St.27 status event code: A-4-4-P10-P22-nap-X000 |