JP7344965B2 - 処理装置及び処理方法 - Google Patents

処理装置及び処理方法 Download PDF

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Publication number
JP7344965B2
JP7344965B2 JP2021533017A JP2021533017A JP7344965B2 JP 7344965 B2 JP7344965 B2 JP 7344965B2 JP 2021533017 A JP2021533017 A JP 2021533017A JP 2021533017 A JP2021533017 A JP 2021533017A JP 7344965 B2 JP7344965 B2 JP 7344965B2
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JP
Japan
Prior art keywords
modified layer
internal surface
surface modified
forming
wafer
Prior art date
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Active
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JP2021533017A
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English (en)
Japanese (ja)
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JPWO2021010284A5 (https=
JPWO2021010284A1 (https=
Inventor
隼斗 田之上
陽平 山下
弘明 森
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Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
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Publication date
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Publication of JPWO2021010284A5 publication Critical patent/JPWO2021010284A5/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70—Auxiliary operations or equipment
    • B23K26/702—Auxiliary equipment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials
    • B23K2103/56—Inorganic materials other than metals or composite materials being semiconducting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Laser Beam Processing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2021533017A 2019-07-18 2020-07-09 処理装置及び処理方法 Active JP7344965B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019133087 2019-07-18
JP2019133087 2019-07-18
PCT/JP2020/026878 WO2021010284A1 (ja) 2019-07-18 2020-07-09 処理装置及び処理方法

Publications (3)

Publication Number Publication Date
JPWO2021010284A1 JPWO2021010284A1 (https=) 2021-01-21
JPWO2021010284A5 JPWO2021010284A5 (https=) 2022-03-29
JP7344965B2 true JP7344965B2 (ja) 2023-09-14

Family

ID=74210785

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021533017A Active JP7344965B2 (ja) 2019-07-18 2020-07-09 処理装置及び処理方法

Country Status (6)

Country Link
US (2) US12070820B2 (https=)
JP (1) JP7344965B2 (https=)
KR (2) KR102830236B1 (https=)
CN (2) CN114096372B (https=)
TW (1) TWI857094B (https=)
WO (1) WO2021010284A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI877184B (zh) * 2019-07-18 2025-03-21 日商東京威力科創股份有限公司 處理裝置及處理方法
TWI855139B (zh) * 2019-10-28 2024-09-11 日商東京威力科創股份有限公司 基板處理方法及基板處理系統
JP7558044B2 (ja) * 2020-11-30 2024-09-30 株式会社ディスコ ウェーハの加工方法
JP2024039367A (ja) * 2022-09-09 2024-03-22 株式会社ディスコ ウエーハの加工方法
JP2024042807A (ja) * 2022-09-16 2024-03-29 キオクシア株式会社 レーザー加工装置、レーザー剥離方法および半導体装置の製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006108532A (ja) 2004-10-08 2006-04-20 Disco Abrasive Syst Ltd ウエーハの研削方法
JP2013049161A (ja) 2011-08-30 2013-03-14 Hamamatsu Photonics Kk 加工対象物切断方法
JP2015032690A (ja) 2013-08-02 2015-02-16 株式会社ディスコ 積層ウェーハの加工方法
JP2016043401A (ja) 2014-08-26 2016-04-04 信越ポリマー株式会社 基板加工方法及び基板
JP2016215231A (ja) 2015-05-19 2016-12-22 パナソニックＩｐマネジメント株式会社 脆性基板のスライス装置及び方法
WO2019044588A1 (ja) 2017-09-04 2019-03-07 リンテック株式会社 薄型化板状部材の製造方法、及び薄型化板状部材の製造装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4659300B2 (ja) * 2000-09-13 2011-03-30 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップの製造方法
JP4509578B2 (ja) * 2004-01-09 2010-07-21 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
CN1925945A (zh) * 2004-03-05 2007-03-07 奥林巴斯株式会社 激光加工装置
JP5446631B2 (ja) * 2009-09-10 2014-03-19 アイシン精機株式会社 レーザ加工方法及びレーザ加工装置
JP5410250B2 (ja) * 2009-11-25 2014-02-05 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
JP5707889B2 (ja) * 2010-11-16 2015-04-30 株式会社東京精密 半導体基板の切断方法及び半導体基板の切断装置
JP5771391B2 (ja) * 2010-12-22 2015-08-26 浜松ホトニクス株式会社 レーザ加工方法
KR102215918B1 (ko) * 2013-03-27 2021-02-16 하마마츠 포토닉스 가부시키가이샤 레이저 가공 장치 및 레이저 가공 방법
JP6037925B2 (ja) * 2013-04-12 2016-12-07 株式会社ディスコ レーザー加工装置
JP6341639B2 (ja) * 2013-08-01 2018-06-13 株式会社ディスコ 加工装置
JP6482389B2 (ja) * 2015-06-02 2019-03-13 株式会社ディスコ ウエーハの生成方法
JP2017053775A (ja) * 2015-09-10 2017-03-16 東レエンジニアリング株式会社 光透過性を備えた物体内部の撮像装置および検査装置
JP6540430B2 (ja) * 2015-09-28 2019-07-10 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP6818273B2 (ja) * 2016-05-06 2021-01-20 国立大学法人埼玉大学 基板加工方法
JP6844901B2 (ja) * 2017-05-26 2021-03-17 株式会社ディスコ レーザ加工装置及びレーザ加工方法
JP6935314B2 (ja) * 2017-12-01 2021-09-15 株式会社ディスコ レーザー加工方法
KR102669504B1 (ko) * 2018-04-09 2024-05-28 도쿄엘렉트론가부시키가이샤 레이저 가공 장치, 레이저 가공 시스템 및 레이저 가공 방법

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006108532A (ja) 2004-10-08 2006-04-20 Disco Abrasive Syst Ltd ウエーハの研削方法
JP2013049161A (ja) 2011-08-30 2013-03-14 Hamamatsu Photonics Kk 加工対象物切断方法
JP2015032690A (ja) 2013-08-02 2015-02-16 株式会社ディスコ 積層ウェーハの加工方法
JP2016043401A (ja) 2014-08-26 2016-04-04 信越ポリマー株式会社 基板加工方法及び基板
JP2016215231A (ja) 2015-05-19 2016-12-22 パナソニックＩｐマネジメント株式会社 脆性基板のスライス装置及び方法
WO2019044588A1 (ja) 2017-09-04 2019-03-07 リンテック株式会社 薄型化板状部材の製造方法、及び薄型化板状部材の製造装置

Also Published As

Publication number Publication date
CN114096372B (zh) 2024-03-22
KR20250107966A (ko) 2025-07-14
TWI857094B (zh) 2024-10-01
WO2021010284A1 (ja) 2021-01-21
US20240367266A1 (en) 2024-11-07
KR20220035442A (ko) 2022-03-22
JPWO2021010284A1 (https=) 2021-01-21
US20220250191A1 (en) 2022-08-11
CN114096372A (zh) 2022-02-25
TW202116468A (zh) 2021-05-01
CN118268740A (zh) 2024-07-02
KR102830236B1 (ko) 2025-07-07
US12070820B2 (en) 2024-08-27

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