KR102822613B1 - 레지스트 하층막 형성 조성물 - Google Patents

레지스트 하층막 형성 조성물 Download PDF

Info

Publication number
KR102822613B1
KR102822613B1 KR1020227030644A KR20227030644A KR102822613B1 KR 102822613 B1 KR102822613 B1 KR 102822613B1 KR 1020227030644 A KR1020227030644 A KR 1020227030644A KR 20227030644 A KR20227030644 A KR 20227030644A KR 102822613 B1 KR102822613 B1 KR 102822613B1
Authority
KR
South Korea
Prior art keywords
group
resist underlayer
resist
underlayer film
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020227030644A
Other languages
English (en)
Korean (ko)
Other versions
KR20220161549A (ko
Inventor
히로토 오가타
토모타다 히로하라
히로카즈 니시마키
마코토 나카지마
Original Assignee
닛산 가가쿠 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 닛산 가가쿠 가부시키가이샤 filed Critical 닛산 가가쿠 가부시키가이샤
Publication of KR20220161549A publication Critical patent/KR20220161549A/ko
Application granted granted Critical
Publication of KR102822613B1 publication Critical patent/KR102822613B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G63/00—Macromolecular compounds obtained by reactions forming a carboxylic ester link in the main chain of the macromolecule
    • C08G63/02—Polyesters derived from hydroxycarboxylic acids or from polycarboxylic acids and polyhydroxy compounds
    • C08G63/12—Polyesters derived from hydroxycarboxylic acids or from polycarboxylic acids and polyhydroxy compounds derived from polycarboxylic acids and polyhydroxy compounds
    • C08G63/16—Dicarboxylic acids and dihydroxy compounds
    • C08G63/20—Polyesters having been prepared in the presence of compounds having one reactive group or more than two reactive groups
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D167/00—Coating compositions based on polyesters obtained by reactions forming a carboxylic ester link in the main chain; Coating compositions based on derivatives of such polymers
    • C09D167/02—Polyesters derived from dicarboxylic acids and dihydroxy compounds
    • C09D167/03—Polyesters derived from dicarboxylic acids and dihydroxy compounds the dicarboxylic acids and dihydroxy compounds having the carboxyl - and the hydroxy groups directly linked to aromatic rings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2043—Photolithographic processes using an anti-reflective coating

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Wood Science & Technology (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials For Photolithography (AREA)
KR1020227030644A 2020-03-30 2021-03-18 레지스트 하층막 형성 조성물 Active KR102822613B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020060494 2020-03-30
JPJP-P-2020-060494 2020-03-30
PCT/JP2021/011230 WO2021200241A1 (ja) 2020-03-30 2021-03-18 レジスト下層膜形成組成物

Publications (2)

Publication Number Publication Date
KR20220161549A KR20220161549A (ko) 2022-12-06
KR102822613B1 true KR102822613B1 (ko) 2025-06-19

Family

ID=77928592

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227030644A Active KR102822613B1 (ko) 2020-03-30 2021-03-18 레지스트 하층막 형성 조성물

Country Status (6)

Country Link
US (1) US20230137360A1 (https=)
JP (2) JPWO2021200241A1 (https=)
KR (1) KR102822613B1 (https=)
CN (1) CN115427891A (https=)
TW (1) TW202146372A (https=)
WO (1) WO2021200241A1 (https=)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016158509A1 (ja) 2015-03-31 2016-10-06 日産化学工業株式会社 カチオン重合性レジスト下層膜形成組成物
WO2017002653A1 (ja) 2015-07-02 2017-01-05 日産化学工業株式会社 長鎖アルキル基を有するエポキシ付加体を含むレジスト下層膜形成組成物

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000231197A (ja) * 1999-02-09 2000-08-22 Mitsubishi Electric Corp レジストパターン形成方法及びそれを用いた半導体装置の製造方法並びにレジストパターン形成装置及びホットプレート
JP4105036B2 (ja) 2003-05-28 2008-06-18 信越化学工業株式会社 レジスト下層膜材料ならびにパターン形成方法
EP2749946B1 (en) * 2008-07-16 2015-09-09 Nissan Chemical Industries, Ltd. Positive resist composition;patttern forming method; microlens and planarization film therefrom; solid-state imaging device, liquid crystal display device and led display device comprising the same
WO2011093188A1 (ja) * 2010-01-26 2011-08-04 日産化学工業株式会社 ポジ型レジスト組成物及びマイクロレンズの製造方法
CN105143979B (zh) * 2013-04-17 2019-07-05 日产化学工业株式会社 抗蚀剂下层膜形成用组合物
JP6368956B2 (ja) * 2013-08-28 2018-08-08 日産化学株式会社 レジスト下層膜を適用したパターン形成方法
CN105874386B (zh) * 2013-12-26 2019-12-06 日产化学工业株式会社 含有具有仲氨基的酚醛清漆聚合物的抗蚀剂下层膜形成用组合物
KR102134674B1 (ko) * 2014-06-16 2020-07-16 닛산 가가쿠 가부시키가이샤 레지스트 하층막 형성 조성물
WO2017154921A1 (ja) * 2016-03-10 2017-09-14 日産化学工業株式会社 炭素原子間の不飽和結合による光架橋基を有する化合物を含む段差基板被覆組成物
CN109563234B (zh) * 2016-08-08 2022-08-23 日产化学株式会社 光固化性组合物及半导体装置的制造方法
TWI748087B (zh) * 2017-04-25 2021-12-01 日商日產化學工業股份有限公司 使用茀化合物之阻劑下層膜形成組成物
KR102549467B1 (ko) * 2017-08-09 2023-06-29 닛산 가가쿠 가부시키가이샤 가교성 화합물을 함유하는 광경화성 단차기판 피복 조성물
JP7192775B2 (ja) * 2017-09-29 2022-12-20 日本ゼオン株式会社 ポジ型感放射線性樹脂組成物
CN110128365B (zh) * 2019-05-10 2023-07-07 福建泓光半导体材料有限公司 一种抗蚀剂下层膜单体和组合物及图案形成方法
US11242194B2 (en) * 2020-02-27 2022-02-08 Trek Bicycle Corporation Bicycle packaging system

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016158509A1 (ja) 2015-03-31 2016-10-06 日産化学工業株式会社 カチオン重合性レジスト下層膜形成組成物
WO2017002653A1 (ja) 2015-07-02 2017-01-05 日産化学工業株式会社 長鎖アルキル基を有するエポキシ付加体を含むレジスト下層膜形成組成物
US20180181001A1 (en) 2015-07-02 2018-06-28 Nissan Chemical Industries, Ltd. Resist underlayer film-forming composition comprising epoxy adduct having long-chain alkyl group

Also Published As

Publication number Publication date
TW202146372A (zh) 2021-12-16
KR20220161549A (ko) 2022-12-06
US20230137360A1 (en) 2023-05-04
JP2026041942A (ja) 2026-03-10
WO2021200241A1 (ja) 2021-10-07
CN115427891A (zh) 2022-12-02
JPWO2021200241A1 (https=) 2021-10-07

Similar Documents

Publication Publication Date Title
KR102647162B1 (ko) 장쇄 알킬기함유 노볼락을 포함하는 레지스트 하층막 형성 조성물
TWI810152B (zh) 用以形成膜密度經提昇之阻劑下層膜的組成物
JP7287389B2 (ja) 炭素酸素間二重結合を利用したレジスト下層膜形成組成物
WO2014030579A1 (ja) 多核フェノール類を有するノボラック樹脂を含むレジスト下層膜形成組成物
WO2011132641A1 (ja) ポリイミド構造を含有する樹脂を含むリソグラフィー用レジスト下層膜形成組成物
TWI799364B (zh) 含有具長鏈烷基之環氧加成物之光阻下層膜形成組成物
JP7768131B2 (ja) レジスト下層膜形成組成物
JP7327479B2 (ja) ジシアノスチリル基を有する複素環化合物を含むウェットエッチング可能なレジスト下層膜形成組成物
JP7322949B2 (ja) ジシアノスチリル基を含むウェットエッチング可能なレジスト下層膜形成組成物
WO2022196495A1 (ja) レジスト下層膜形成組成物
WO2022138454A1 (ja) レジスト下層膜形成組成物
WO2022186231A1 (ja) ベンジリデンシアノ酢酸エステル基を有するレジスト下層膜形成組成物
JP7416062B2 (ja) レジスト下層膜形成組成物
JP7697367B2 (ja) レジスト下層膜形成組成物
KR102822613B1 (ko) 레지스트 하층막 형성 조성물
JP7806692B2 (ja) ジアリールメタン誘導体を用いたレジスト下層膜形成組成物
WO2023100506A1 (ja) ヒドロキシケイ皮酸誘導体を有するレジスト下層膜形成用組成物
WO2023063148A1 (ja) レジスト下層膜形成組成物
KR20240146672A (ko) 소성물의 경도의 향상방법
WO2022244710A1 (ja) レジスト下層膜形成組成物
KR102777079B1 (ko) 레지스트 하층막 형성 조성물
WO2024106454A1 (ja) クルクミン誘導体を有するレジスト下層膜形成用組成物

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20220905

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20250212

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20250417

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20250616

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20250617

End annual number: 3

Start annual number: 1

PG1601 Publication of registration