TW202146372A - 阻劑下層膜形成組成物 - Google Patents

阻劑下層膜形成組成物 Download PDF

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Publication number
TW202146372A
TW202146372A TW110109818A TW110109818A TW202146372A TW 202146372 A TW202146372 A TW 202146372A TW 110109818 A TW110109818 A TW 110109818A TW 110109818 A TW110109818 A TW 110109818A TW 202146372 A TW202146372 A TW 202146372A
Authority
TW
Taiwan
Prior art keywords
underlayer film
resist underlayer
forming composition
film
resist
Prior art date
Application number
TW110109818A
Other languages
English (en)
Chinese (zh)
Inventor
緒方裕斗
広原知忠
西卷裕和
中島誠
Original Assignee
日商日產化學股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商日產化學股份有限公司 filed Critical 日商日產化學股份有限公司
Publication of TW202146372A publication Critical patent/TW202146372A/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G63/00—Macromolecular compounds obtained by reactions forming a carboxylic ester link in the main chain of the macromolecule
    • C08G63/02—Polyesters derived from hydroxycarboxylic acids or from polycarboxylic acids and polyhydroxy compounds
    • C08G63/12—Polyesters derived from hydroxycarboxylic acids or from polycarboxylic acids and polyhydroxy compounds derived from polycarboxylic acids and polyhydroxy compounds
    • C08G63/16—Dicarboxylic acids and dihydroxy compounds
    • C08G63/20—Polyesters having been prepared in the presence of compounds having one reactive group or more than two reactive groups
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D167/00—Coating compositions based on polyesters obtained by reactions forming a carboxylic ester link in the main chain; Coating compositions based on derivatives of such polymers
    • C09D167/02—Polyesters derived from dicarboxylic acids and dihydroxy compounds
    • C09D167/03—Polyesters derived from dicarboxylic acids and dihydroxy compounds the dicarboxylic acids and dihydroxy compounds having the carboxyl - and the hydroxy groups directly linked to aromatic rings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2043—Photolithographic processes using an anti-reflective coating

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Materials For Photolithography (AREA)
TW110109818A 2020-03-30 2021-03-18 阻劑下層膜形成組成物 TW202146372A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020060494 2020-03-30
JP2020-060494 2020-03-30

Publications (1)

Publication Number Publication Date
TW202146372A true TW202146372A (zh) 2021-12-16

Family

ID=77928592

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110109818A TW202146372A (zh) 2020-03-30 2021-03-18 阻劑下層膜形成組成物

Country Status (6)

Country Link
US (1) US20230137360A1 (https=)
JP (2) JPWO2021200241A1 (https=)
KR (1) KR102822613B1 (https=)
CN (1) CN115427891A (https=)
TW (1) TW202146372A (https=)
WO (1) WO2021200241A1 (https=)

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000231197A (ja) * 1999-02-09 2000-08-22 Mitsubishi Electric Corp レジストパターン形成方法及びそれを用いた半導体装置の製造方法並びにレジストパターン形成装置及びホットプレート
JP4105036B2 (ja) 2003-05-28 2008-06-18 信越化学工業株式会社 レジスト下層膜材料ならびにパターン形成方法
CN102089710B (zh) * 2008-07-16 2016-12-07 日产化学工业株式会社 正型抗蚀剂组合物以及微透镜的制造方法
WO2011093188A1 (ja) * 2010-01-26 2011-08-04 日産化学工業株式会社 ポジ型レジスト組成物及びマイクロレンズの製造方法
WO2014171326A1 (ja) * 2013-04-17 2014-10-23 日産化学工業株式会社 レジスト下層膜形成組成物
EP3040777B1 (en) * 2013-08-28 2018-03-14 Nissan Chemical Industries, Ltd. Pattern forming method using resist underlayer film
JP6583630B2 (ja) * 2013-12-26 2019-10-02 日産化学株式会社 第二アミノ基を有するノボラックポリマーを含むレジスト下層膜形成組成物
CN106462074B (zh) * 2014-06-16 2020-06-09 日产化学工业株式会社 抗蚀剂下层膜形成用组合物
JP6414631B2 (ja) * 2015-03-31 2018-10-31 日産化学株式会社 カチオン重合性レジスト下層膜形成組成物
JP6892633B2 (ja) 2015-07-02 2021-06-23 日産化学株式会社 長鎖アルキル基を有するエポキシ付加体を含むレジスト下層膜形成組成物
WO2017154921A1 (ja) * 2016-03-10 2017-09-14 日産化学工業株式会社 炭素原子間の不飽和結合による光架橋基を有する化合物を含む段差基板被覆組成物
US11681223B2 (en) * 2016-08-08 2023-06-20 Nissan Chemical Corporation Photocurable composition and method for producing semiconductor device
WO2018198960A1 (ja) * 2017-04-25 2018-11-01 日産化学株式会社 フルオレン化合物を用いたレジスト下層膜形成組成物
WO2019031556A1 (ja) * 2017-08-09 2019-02-14 日産化学株式会社 架橋性化合物を含有する光硬化性段差基板被覆組成物
KR102669089B1 (ko) * 2017-09-29 2024-05-23 니폰 제온 가부시키가이샤 포지티브형 감방사선성 수지 조성물
CN110128365B (zh) * 2019-05-10 2023-07-07 福建泓光半导体材料有限公司 一种抗蚀剂下层膜单体和组合物及图案形成方法
US11242194B2 (en) * 2020-02-27 2022-02-08 Trek Bicycle Corporation Bicycle packaging system

Also Published As

Publication number Publication date
WO2021200241A1 (ja) 2021-10-07
JPWO2021200241A1 (https=) 2021-10-07
US20230137360A1 (en) 2023-05-04
CN115427891A (zh) 2022-12-02
KR20220161549A (ko) 2022-12-06
JP2026041942A (ja) 2026-03-10
KR102822613B1 (ko) 2025-06-19

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