CN115427891A - 抗蚀剂下层膜形成用组合物 - Google Patents

抗蚀剂下层膜形成用组合物 Download PDF

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Publication number
CN115427891A
CN115427891A CN202180026249.8A CN202180026249A CN115427891A CN 115427891 A CN115427891 A CN 115427891A CN 202180026249 A CN202180026249 A CN 202180026249A CN 115427891 A CN115427891 A CN 115427891A
Authority
CN
China
Prior art keywords
underlayer film
resist underlayer
forming
resist
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180026249.8A
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English (en)
Chinese (zh)
Inventor
绪方裕斗
广原知忠
西卷裕和
中岛诚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Chemical Corp
Original Assignee
Nissan Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Corp filed Critical Nissan Chemical Corp
Publication of CN115427891A publication Critical patent/CN115427891A/zh
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G63/00—Macromolecular compounds obtained by reactions forming a carboxylic ester link in the main chain of the macromolecule
    • C08G63/02—Polyesters derived from hydroxycarboxylic acids or from polycarboxylic acids and polyhydroxy compounds
    • C08G63/12—Polyesters derived from hydroxycarboxylic acids or from polycarboxylic acids and polyhydroxy compounds derived from polycarboxylic acids and polyhydroxy compounds
    • C08G63/16—Dicarboxylic acids and dihydroxy compounds
    • C08G63/20—Polyesters having been prepared in the presence of compounds having one reactive group or more than two reactive groups
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D167/00—Coating compositions based on polyesters obtained by reactions forming a carboxylic ester link in the main chain; Coating compositions based on derivatives of such polymers
    • C09D167/02—Polyesters derived from dicarboxylic acids and dihydroxy compounds
    • C09D167/03—Polyesters derived from dicarboxylic acids and dihydroxy compounds the dicarboxylic acids and dihydroxy compounds having the carboxyl - and the hydroxy groups directly linked to aromatic rings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2043—Photolithographic processes using an anti-reflective coating

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Wood Science & Technology (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials For Photolithography (AREA)
CN202180026249.8A 2020-03-30 2021-03-18 抗蚀剂下层膜形成用组合物 Pending CN115427891A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020-060494 2020-03-30
JP2020060494 2020-03-30
PCT/JP2021/011230 WO2021200241A1 (ja) 2020-03-30 2021-03-18 レジスト下層膜形成組成物

Publications (1)

Publication Number Publication Date
CN115427891A true CN115427891A (zh) 2022-12-02

Family

ID=77928592

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180026249.8A Pending CN115427891A (zh) 2020-03-30 2021-03-18 抗蚀剂下层膜形成用组合物

Country Status (6)

Country Link
US (1) US20230137360A1 (https=)
JP (2) JPWO2021200241A1 (https=)
KR (1) KR102822613B1 (https=)
CN (1) CN115427891A (https=)
TW (1) TW202146372A (https=)
WO (1) WO2021200241A1 (https=)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6255225B1 (en) * 1999-02-09 2001-07-03 Mitsubishi Denki Kabushiki Kaisha Method of forming a resist pattern, a method of manufacturing semiconductor device by the same method, and a device and a hot plate for forming a resist pattern
CN105143979A (zh) * 2013-04-17 2015-12-09 日产化学工业株式会社 抗蚀剂下层膜形成用组合物
CN105874386A (zh) * 2013-12-26 2016-08-17 日产化学工业株式会社 含有具有仲氨基的酚醛清漆聚合物的抗蚀剂下层膜形成用组合物
CN107430343A (zh) * 2015-03-31 2017-12-01 日产化学工业株式会社 阳离子聚合性抗蚀剂下层膜形成用组合物
CN110128365A (zh) * 2019-05-10 2019-08-16 福建泓光半导体材料有限公司 一种抗蚀剂下层膜单体和组合物及图案形成方法
CN110546570A (zh) * 2017-04-25 2019-12-06 日产化学株式会社 使用了芴化合物的抗蚀剂下层膜形成用组合物

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4105036B2 (ja) 2003-05-28 2008-06-18 信越化学工業株式会社 レジスト下層膜材料ならびにパターン形成方法
EP2749946B1 (en) * 2008-07-16 2015-09-09 Nissan Chemical Industries, Ltd. Positive resist composition;patttern forming method; microlens and planarization film therefrom; solid-state imaging device, liquid crystal display device and led display device comprising the same
WO2011093188A1 (ja) * 2010-01-26 2011-08-04 日産化学工業株式会社 ポジ型レジスト組成物及びマイクロレンズの製造方法
JP6368956B2 (ja) * 2013-08-28 2018-08-08 日産化学株式会社 レジスト下層膜を適用したパターン形成方法
KR102134674B1 (ko) * 2014-06-16 2020-07-16 닛산 가가쿠 가부시키가이샤 레지스트 하층막 형성 조성물
KR102522912B1 (ko) * 2015-07-02 2023-04-18 닛산 가가쿠 가부시키가이샤 장쇄알킬기를 갖는 에폭시부가체를 포함하는 레지스트 하층막 형성 조성물
WO2017154921A1 (ja) * 2016-03-10 2017-09-14 日産化学工業株式会社 炭素原子間の不飽和結合による光架橋基を有する化合物を含む段差基板被覆組成物
CN109563234B (zh) * 2016-08-08 2022-08-23 日产化学株式会社 光固化性组合物及半导体装置的制造方法
KR102549467B1 (ko) * 2017-08-09 2023-06-29 닛산 가가쿠 가부시키가이샤 가교성 화합물을 함유하는 광경화성 단차기판 피복 조성물
JP7192775B2 (ja) * 2017-09-29 2022-12-20 日本ゼオン株式会社 ポジ型感放射線性樹脂組成物
US11242194B2 (en) * 2020-02-27 2022-02-08 Trek Bicycle Corporation Bicycle packaging system

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6255225B1 (en) * 1999-02-09 2001-07-03 Mitsubishi Denki Kabushiki Kaisha Method of forming a resist pattern, a method of manufacturing semiconductor device by the same method, and a device and a hot plate for forming a resist pattern
CN105143979A (zh) * 2013-04-17 2015-12-09 日产化学工业株式会社 抗蚀剂下层膜形成用组合物
CN105874386A (zh) * 2013-12-26 2016-08-17 日产化学工业株式会社 含有具有仲氨基的酚醛清漆聚合物的抗蚀剂下层膜形成用组合物
CN107430343A (zh) * 2015-03-31 2017-12-01 日产化学工业株式会社 阳离子聚合性抗蚀剂下层膜形成用组合物
CN110546570A (zh) * 2017-04-25 2019-12-06 日产化学株式会社 使用了芴化合物的抗蚀剂下层膜形成用组合物
CN110128365A (zh) * 2019-05-10 2019-08-16 福建泓光半导体材料有限公司 一种抗蚀剂下层膜单体和组合物及图案形成方法

Also Published As

Publication number Publication date
TW202146372A (zh) 2021-12-16
KR20220161549A (ko) 2022-12-06
US20230137360A1 (en) 2023-05-04
JP2026041942A (ja) 2026-03-10
WO2021200241A1 (ja) 2021-10-07
KR102822613B1 (ko) 2025-06-19
JPWO2021200241A1 (https=) 2021-10-07

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