JPWO2021200241A1 - - Google Patents
Info
- Publication number
- JPWO2021200241A1 JPWO2021200241A1 JP2022511900A JP2022511900A JPWO2021200241A1 JP WO2021200241 A1 JPWO2021200241 A1 JP WO2021200241A1 JP 2022511900 A JP2022511900 A JP 2022511900A JP 2022511900 A JP2022511900 A JP 2022511900A JP WO2021200241 A1 JPWO2021200241 A1 JP WO2021200241A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G63/00—Macromolecular compounds obtained by reactions forming a carboxylic ester link in the main chain of the macromolecule
- C08G63/02—Polyesters derived from hydroxycarboxylic acids or from polycarboxylic acids and polyhydroxy compounds
- C08G63/12—Polyesters derived from hydroxycarboxylic acids or from polycarboxylic acids and polyhydroxy compounds derived from polycarboxylic acids and polyhydroxy compounds
- C08G63/16—Dicarboxylic acids and dihydroxy compounds
- C08G63/20—Polyesters having been prepared in the presence of compounds having one reactive group or more than two reactive groups
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D167/00—Coating compositions based on polyesters obtained by reactions forming a carboxylic ester link in the main chain; Coating compositions based on derivatives of such polymers
- C09D167/02—Polyesters derived from dicarboxylic acids and dihydroxy compounds
- C09D167/03—Polyesters derived from dicarboxylic acids and dihydroxy compounds the dicarboxylic acids and dihydroxy compounds having the carboxyl - and the hydroxy groups directly linked to aromatic rings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
- H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
- H10P76/2041—Photolithographic processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
- H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
- H10P76/2041—Photolithographic processes
- H10P76/2043—Photolithographic processes using an anti-reflective coating
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Structural Engineering (AREA)
- Architecture (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Wood Science & Technology (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials For Photolithography (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2025241880A JP2026041942A (ja) | 2020-03-30 | 2025-12-08 | レジスト下層膜形成組成物 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020060494 | 2020-03-30 | ||
| PCT/JP2021/011230 WO2021200241A1 (ja) | 2020-03-30 | 2021-03-18 | レジスト下層膜形成組成物 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025241880A Division JP2026041942A (ja) | 2020-03-30 | 2025-12-08 | レジスト下層膜形成組成物 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2021200241A1 true JPWO2021200241A1 (https=) | 2021-10-07 |
| JPWO2021200241A5 JPWO2021200241A5 (https=) | 2024-02-26 |
Family
ID=77928592
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022511900A Pending JPWO2021200241A1 (https=) | 2020-03-30 | 2021-03-18 | |
| JP2025241880A Pending JP2026041942A (ja) | 2020-03-30 | 2025-12-08 | レジスト下層膜形成組成物 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025241880A Pending JP2026041942A (ja) | 2020-03-30 | 2025-12-08 | レジスト下層膜形成組成物 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20230137360A1 (https=) |
| JP (2) | JPWO2021200241A1 (https=) |
| KR (1) | KR102822613B1 (https=) |
| CN (1) | CN115427891A (https=) |
| TW (1) | TW202146372A (https=) |
| WO (1) | WO2021200241A1 (https=) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016158509A1 (ja) * | 2015-03-31 | 2016-10-06 | 日産化学工業株式会社 | カチオン重合性レジスト下層膜形成組成物 |
| WO2017002653A1 (ja) * | 2015-07-02 | 2017-01-05 | 日産化学工業株式会社 | 長鎖アルキル基を有するエポキシ付加体を含むレジスト下層膜形成組成物 |
| WO2019031556A1 (ja) * | 2017-08-09 | 2019-02-14 | 日産化学株式会社 | 架橋性化合物を含有する光硬化性段差基板被覆組成物 |
| WO2019065262A1 (ja) * | 2017-09-29 | 2019-04-04 | 日本ゼオン株式会社 | ポジ型感放射線性樹脂組成物 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000231197A (ja) * | 1999-02-09 | 2000-08-22 | Mitsubishi Electric Corp | レジストパターン形成方法及びそれを用いた半導体装置の製造方法並びにレジストパターン形成装置及びホットプレート |
| JP4105036B2 (ja) | 2003-05-28 | 2008-06-18 | 信越化学工業株式会社 | レジスト下層膜材料ならびにパターン形成方法 |
| EP2749946B1 (en) * | 2008-07-16 | 2015-09-09 | Nissan Chemical Industries, Ltd. | Positive resist composition;patttern forming method; microlens and planarization film therefrom; solid-state imaging device, liquid crystal display device and led display device comprising the same |
| WO2011093188A1 (ja) * | 2010-01-26 | 2011-08-04 | 日産化学工業株式会社 | ポジ型レジスト組成物及びマイクロレンズの製造方法 |
| CN105143979B (zh) * | 2013-04-17 | 2019-07-05 | 日产化学工业株式会社 | 抗蚀剂下层膜形成用组合物 |
| JP6368956B2 (ja) * | 2013-08-28 | 2018-08-08 | 日産化学株式会社 | レジスト下層膜を適用したパターン形成方法 |
| CN105874386B (zh) * | 2013-12-26 | 2019-12-06 | 日产化学工业株式会社 | 含有具有仲氨基的酚醛清漆聚合物的抗蚀剂下层膜形成用组合物 |
| KR102134674B1 (ko) * | 2014-06-16 | 2020-07-16 | 닛산 가가쿠 가부시키가이샤 | 레지스트 하층막 형성 조성물 |
| WO2017154921A1 (ja) * | 2016-03-10 | 2017-09-14 | 日産化学工業株式会社 | 炭素原子間の不飽和結合による光架橋基を有する化合物を含む段差基板被覆組成物 |
| CN109563234B (zh) * | 2016-08-08 | 2022-08-23 | 日产化学株式会社 | 光固化性组合物及半导体装置的制造方法 |
| TWI748087B (zh) * | 2017-04-25 | 2021-12-01 | 日商日產化學工業股份有限公司 | 使用茀化合物之阻劑下層膜形成組成物 |
| CN110128365B (zh) * | 2019-05-10 | 2023-07-07 | 福建泓光半导体材料有限公司 | 一种抗蚀剂下层膜单体和组合物及图案形成方法 |
| US11242194B2 (en) * | 2020-02-27 | 2022-02-08 | Trek Bicycle Corporation | Bicycle packaging system |
-
2021
- 2021-03-18 CN CN202180026249.8A patent/CN115427891A/zh active Pending
- 2021-03-18 KR KR1020227030644A patent/KR102822613B1/ko active Active
- 2021-03-18 JP JP2022511900A patent/JPWO2021200241A1/ja active Pending
- 2021-03-18 US US17/916,307 patent/US20230137360A1/en active Pending
- 2021-03-18 WO PCT/JP2021/011230 patent/WO2021200241A1/ja not_active Ceased
- 2021-03-18 TW TW110109818A patent/TW202146372A/zh unknown
-
2025
- 2025-12-08 JP JP2025241880A patent/JP2026041942A/ja active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016158509A1 (ja) * | 2015-03-31 | 2016-10-06 | 日産化学工業株式会社 | カチオン重合性レジスト下層膜形成組成物 |
| WO2017002653A1 (ja) * | 2015-07-02 | 2017-01-05 | 日産化学工業株式会社 | 長鎖アルキル基を有するエポキシ付加体を含むレジスト下層膜形成組成物 |
| WO2019031556A1 (ja) * | 2017-08-09 | 2019-02-14 | 日産化学株式会社 | 架橋性化合物を含有する光硬化性段差基板被覆組成物 |
| WO2019065262A1 (ja) * | 2017-09-29 | 2019-04-04 | 日本ゼオン株式会社 | ポジ型感放射線性樹脂組成物 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202146372A (zh) | 2021-12-16 |
| KR20220161549A (ko) | 2022-12-06 |
| US20230137360A1 (en) | 2023-05-04 |
| JP2026041942A (ja) | 2026-03-10 |
| WO2021200241A1 (ja) | 2021-10-07 |
| CN115427891A (zh) | 2022-12-02 |
| KR102822613B1 (ko) | 2025-06-19 |
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