KR102748454B1 - 결합된 광학 및 전자빔 기술을 사용한 편심 측정 - Google Patents

결합된 광학 및 전자빔 기술을 사용한 편심 측정 Download PDF

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KR102748454B1
KR102748454B1 KR1020217029424A KR20217029424A KR102748454B1 KR 102748454 B1 KR102748454 B1 KR 102748454B1 KR 1020217029424 A KR1020217029424 A KR 1020217029424A KR 20217029424 A KR20217029424 A KR 20217029424A KR 102748454 B1 KR102748454 B1 KR 102748454B1
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South Korea
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eccentricity
semiconductor device
device wafer
measurement tool
electron beam
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Korean (ko)
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KR20210120110A (ko
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로이에 볼코비치
리란 예루살미
나다브 구트만
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케이엘에이 코포레이션
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H01L22/30—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • H01L21/67242—
    • H01L22/12—
    • H01L22/24—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/235—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising optical enhancement of defects or not-directly-visible states

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
KR1020217029424A 2019-02-15 2019-06-04 결합된 광학 및 전자빔 기술을 사용한 편심 측정 Active KR102748454B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962806226P 2019-02-15 2019-02-15
US62/806,226 2019-02-15
PCT/US2019/035282 WO2020167331A1 (en) 2019-02-15 2019-06-04 Misregistration measurements using combined optical and electron beam technology

Publications (2)

Publication Number Publication Date
KR20210120110A KR20210120110A (ko) 2021-10-06
KR102748454B1 true KR102748454B1 (ko) 2024-12-30

Family

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Application Number Title Priority Date Filing Date
KR1020217029424A Active KR102748454B1 (ko) 2019-02-15 2019-06-04 결합된 광학 및 전자빔 기술을 사용한 편심 측정

Country Status (5)

Country Link
JP (1) JP7317131B2 (https=)
KR (1) KR102748454B1 (https=)
CN (1) CN113366619B (https=)
TW (1) TWI804708B (https=)
WO (1) WO2020167331A1 (https=)

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WO2020263461A1 (en) 2019-06-25 2020-12-30 Kla Corporation Selection of regions of interest for measurement of misregistration and amelioration thereof
CN115428139B (zh) 2020-04-15 2024-04-12 科磊股份有限公司 可用于测量半导体装置偏移的具有装置级特征的偏移目标
KR102908887B1 (ko) 2020-06-25 2026-01-06 케이엘에이 코포레이션 반도체 디바이스의 오정합 및 비대칭을 개선하기 위한 웨이블릿 시스템 및 방법
US12131959B2 (en) 2021-04-22 2024-10-29 Kla Corporation Systems and methods for improved metrology for semiconductor device wafers
US12094100B2 (en) * 2022-03-03 2024-09-17 Kla Corporation Measurement of stitching error using split targets

Citations (1)

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Publication number Priority date Publication date Assignee Title
JP5489003B2 (ja) * 2008-11-10 2014-05-14 株式会社ニコン 評価装置および評価方法

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WO1997034319A1 (en) * 1996-03-06 1997-09-18 Hitachi, Ltd. Manufacture of semiconductor device
JP5180419B2 (ja) * 2000-08-30 2013-04-10 ケーエルエー−テンカー・コーポレーション 重ね合わせマーク、重ね合わせマークの設計方法および重ね合わせ測定の方法
US6891627B1 (en) * 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
US7009704B1 (en) * 2000-10-26 2006-03-07 Kla-Tencor Technologies Corporation Overlay error detection
US6678038B2 (en) * 2001-08-03 2004-01-13 Nikon Corporation Apparatus and methods for detecting tool-induced shift in microlithography apparatus
US7804994B2 (en) * 2002-02-15 2010-09-28 Kla-Tencor Technologies Corporation Overlay metrology and control method
US6778275B2 (en) * 2002-02-20 2004-08-17 Micron Technology, Inc. Aberration mark and method for estimating overlay error and optical aberrations
US7138629B2 (en) * 2003-04-22 2006-11-21 Ebara Corporation Testing apparatus using charged particles and device manufacturing method using the testing apparatus
WO2004107415A1 (ja) * 2003-05-28 2004-12-09 Nikon Corporation 位置情報計測方法及び装置、並びに露光方法及び装置
US7561282B1 (en) * 2006-03-27 2009-07-14 Kla-Tencor Technologies Corporation Techniques for determining overlay and critical dimension using a single metrology tool
US7550361B2 (en) * 2007-01-02 2009-06-23 International Business Machines Corporation Trench structure and method for co-alignment of mixed optical and electron beam lithographic fabrication levels
US8243273B2 (en) * 2008-06-04 2012-08-14 Kla-Tencor Corporation Enhanced OVL dummy field enabling “on-the-fly” OVL measurement methods
JP2011155119A (ja) * 2010-01-27 2011-08-11 Hitachi High-Technologies Corp 検査装置及び検査方法
US9007585B2 (en) * 2012-03-07 2015-04-14 Kla-Tencor Corporation Imaging overlay metrology target and complimentary overlay metrology measurement system
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JP5489003B2 (ja) * 2008-11-10 2014-05-14 株式会社ニコン 評価装置および評価方法

Also Published As

Publication number Publication date
CN113366619B (zh) 2025-08-22
TWI804708B (zh) 2023-06-11
TW202043931A (zh) 2020-12-01
CN113366619A (zh) 2021-09-07
JP2022521490A (ja) 2022-04-08
WO2020167331A1 (en) 2020-08-20
KR20210120110A (ko) 2021-10-06
JP7317131B2 (ja) 2023-07-28

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