TWI804708B - 偏移度量衡系統，製造半導體裝置晶圓之方法，及用於在半導體裝置之製造中之偏移之量測中使用之目標 - Google Patents

偏移度量衡系統，製造半導體裝置晶圓之方法，及用於在半導體裝置之製造中之偏移之量測中使用之目標 Download PDF

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TWI804708B
TWI804708B TW109102370A TW109102370A TWI804708B TW I804708 B TWI804708 B TW I804708B TW 109102370 A TW109102370 A TW 109102370A TW 109102370 A TW109102370 A TW 109102370A TW I804708 B TWI804708 B TW I804708B
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Taiwan
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offset
semiconductor device
metrology tool
periodic structure
electron beam
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TW109102370A
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English (en)
Chinese (zh)
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TW202043931A (zh
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羅伊 弗克維奇
里蘭 葉魯夏米
那達夫 古特曼
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美商科磊股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/235—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising optical enhancement of defects or not-directly-visible states

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
TW109102370A 2019-02-15 2020-01-22 偏移度量衡系統，製造半導體裝置晶圓之方法，及用於在半導體裝置之製造中之偏移之量測中使用之目標 TWI804708B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201962806226P 2019-02-15 2019-02-15
US62/806,226 2019-02-15
PCT/US2019/035282 WO2020167331A1 (en) 2019-02-15 2019-06-04 Misregistration measurements using combined optical and electron beam technology
WOPCT/US19/35282 2019-06-04

Publications (2)

Publication Number Publication Date
TW202043931A TW202043931A (zh) 2020-12-01
TWI804708B true TWI804708B (zh) 2023-06-11

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TW109102370A TWI804708B (zh) 2019-02-15 2020-01-22 偏移度量衡系統，製造半導體裝置晶圓之方法，及用於在半導體裝置之製造中之偏移之量測中使用之目標

Country Status (5)

Country Link
JP (1) JP7317131B2 (https=)
KR (1) KR102748454B1 (https=)
CN (1) CN113366619B (https=)
TW (1) TWI804708B (https=)
WO (1) WO2020167331A1 (https=)

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WO2020263461A1 (en) 2019-06-25 2020-12-30 Kla Corporation Selection of regions of interest for measurement of misregistration and amelioration thereof
CN115428139B (zh) 2020-04-15 2024-04-12 科磊股份有限公司 可用于测量半导体装置偏移的具有装置级特征的偏移目标
KR102908887B1 (ko) 2020-06-25 2026-01-06 케이엘에이 코포레이션 반도체 디바이스의 오정합 및 비대칭을 개선하기 위한 웨이블릿 시스템 및 방법
US12131959B2 (en) 2021-04-22 2024-10-29 Kla Corporation Systems and methods for improved metrology for semiconductor device wafers
US12094100B2 (en) * 2022-03-03 2024-09-17 Kla Corporation Measurement of stitching error using split targets

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US6891627B1 (en) * 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
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US7138629B2 (en) * 2003-04-22 2006-11-21 Ebara Corporation Testing apparatus using charged particles and device manufacturing method using the testing apparatus
TW201843533A (zh) * 2017-05-05 2018-12-16 荷蘭商Ａｓｍｌ荷蘭公司 用以預測器件製造製程之良率的方法

Also Published As

Publication number Publication date
CN113366619B (zh) 2025-08-22
TW202043931A (zh) 2020-12-01
CN113366619A (zh) 2021-09-07
JP2022521490A (ja) 2022-04-08
KR102748454B1 (ko) 2024-12-30
WO2020167331A1 (en) 2020-08-20
KR20210120110A (ko) 2021-10-06
JP7317131B2 (ja) 2023-07-28

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