KR102697917B1 - 열화학 기상 증착(cvd) 균일성을 개선하기 위한 장치 및 방법들 - Google Patents

열화학 기상 증착(cvd) 균일성을 개선하기 위한 장치 및 방법들 Download PDF

Info

Publication number
KR102697917B1
KR102697917B1 KR1020207005044A KR20207005044A KR102697917B1 KR 102697917 B1 KR102697917 B1 KR 102697917B1 KR 1020207005044 A KR1020207005044 A KR 1020207005044A KR 20207005044 A KR20207005044 A KR 20207005044A KR 102697917 B1 KR102697917 B1 KR 102697917B1
Authority
KR
South Korea
Prior art keywords
surface area
holes
substrate
density
face plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020207005044A
Other languages
English (en)
Korean (ko)
Other versions
KR20200030591A (ko
Inventor
주빈 후앙
루이 쳉
카르틱 자나키라만
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20200030591A publication Critical patent/KR20200030591A/ko
Application granted granted Critical
Publication of KR102697917B1 publication Critical patent/KR102697917B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020207005044A 2017-08-11 2018-08-10 열화학 기상 증착(cvd) 균일성을 개선하기 위한 장치 및 방법들 Active KR102697917B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201762544507P 2017-08-11 2017-08-11
US62/544,507 2017-08-11
PCT/US2018/046344 WO2019033052A1 (en) 2017-08-11 2018-08-10 APPARATUS AND METHODS FOR IMPROVING CHEMICAL VAPOR PHASE (CVD) DEPOSITION UNIFORMITY

Publications (2)

Publication Number Publication Date
KR20200030591A KR20200030591A (ko) 2020-03-20
KR102697917B1 true KR102697917B1 (ko) 2024-08-21

Family

ID=65271311

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020207005044A Active KR102697917B1 (ko) 2017-08-11 2018-08-10 열화학 기상 증착(cvd) 균일성을 개선하기 위한 장치 및 방법들

Country Status (5)

Country Link
US (1) US11939675B2 (enExample)
JP (2) JP7384784B2 (enExample)
KR (1) KR102697917B1 (enExample)
CN (1) CN111066133B (enExample)
WO (1) WO2019033052A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102560283B1 (ko) * 2018-01-24 2023-07-26 삼성전자주식회사 샤워 헤드를 설계하고 제조하는 장치 및 방법
WO2020247269A1 (en) * 2019-06-07 2020-12-10 Applied Materials, Inc. Faceplate having a curved surface
KR20220071220A (ko) * 2019-09-27 2022-05-31 램 리써치 코포레이션 기판 지지부들의 온도 분포 프로파일들에 영향을 주는 튜닝 가능한 열 차폐부 (heat shield) 및 튜닝 불가능한 열 차폐부
US11600470B2 (en) 2019-12-27 2023-03-07 Applied Materials, Inc. Targeted heat control systems
US11810764B2 (en) * 2020-04-23 2023-11-07 Applied Materials, Inc. Faceplate with edge flow control
KR20210150978A (ko) * 2020-06-03 2021-12-13 에이에스엠 아이피 홀딩 비.브이. 샤워 플레이트, 기판 처리 장치 및 기판 처리 방법
DE102020123546A1 (de) 2020-09-09 2022-03-10 Aixtron Se CVD-Reaktor mit einer Kühlfläche mit bereichsweise vergrößerter Emissivität
US11946140B2 (en) 2021-03-26 2024-04-02 Applied Materials, Inc. Hot showerhead
USD1071103S1 (en) * 2022-04-11 2025-04-15 Applied Materials, Inc. Gas distribution plate
CN115125520B (zh) * 2022-08-09 2023-11-24 季华恒一(佛山)半导体科技有限公司 一种匀气板及镀膜装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012142329A (ja) * 2010-12-28 2012-07-26 Toshiba Corp 処理装置

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2610556C2 (de) * 1976-03-12 1978-02-02 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum Verteilen strömender Medien über einen Strömungsquerschnitt
US5133284A (en) * 1990-07-16 1992-07-28 National Semiconductor Corp. Gas-based backside protection during substrate processing
JP3824675B2 (ja) 1995-03-03 2006-09-20 有限会社デジタル・ウェーブ 結晶製造装置
US6301434B1 (en) * 1998-03-23 2001-10-09 Mattson Technology, Inc. Apparatus and method for CVD and thermal processing of semiconductor substrates
JPH11279778A (ja) 1998-03-30 1999-10-12 Seiko Epson Corp エッチング装置及び半導体装置の製造方法
US6245192B1 (en) * 1999-06-30 2001-06-12 Lam Research Corporation Gas distribution apparatus for semiconductor processing
JP2002299240A (ja) * 2001-03-28 2002-10-11 Tadahiro Omi プラズマ処理装置
JP2007042951A (ja) 2005-08-04 2007-02-15 Tokyo Electron Ltd プラズマ処理装置
US20100162956A1 (en) * 2005-08-05 2010-07-01 Seishi Murakami Substrate Processing Apparatus and Substrate Mount Table Used in the Apparatus
US8142606B2 (en) 2007-06-07 2012-03-27 Applied Materials, Inc. Apparatus for depositing a uniform silicon film and methods for manufacturing the same
US8291857B2 (en) 2008-07-03 2012-10-23 Applied Materials, Inc. Apparatuses and methods for atomic layer deposition
JP5487049B2 (ja) 2010-08-19 2014-05-07 株式会社日本マイクロニクス プローブカード
US8470614B2 (en) * 2010-10-28 2013-06-25 Texas Instruments Incorporated PECVD showerhead configuration for CMP uniformity and improved stress
KR101232200B1 (ko) * 2010-12-28 2013-02-12 피에스케이 주식회사 배플, 기판 처리 장치 및 그 처리 방법
JP5550602B2 (ja) 2011-04-28 2014-07-16 パナソニック株式会社 静電チャックおよびこれを備えるドライエッチング装置
US9167625B2 (en) 2011-11-23 2015-10-20 Asm Ip Holding B.V. Radiation shielding for a substrate holder
US20130164948A1 (en) 2011-12-22 2013-06-27 Intermolecular, Inc. Methods for improving wafer temperature uniformity
KR20130111029A (ko) * 2012-03-30 2013-10-10 삼성전자주식회사 화학 기상 증착 장치용 서셉터 및 이를 구비하는 화학 기상 증착 장치
US20130284092A1 (en) * 2012-04-25 2013-10-31 Applied Materials, Inc. Faceplate having regions of differing emissivity
US9315899B2 (en) * 2012-06-15 2016-04-19 Novellus Systems, Inc. Contoured showerhead for improved plasma shaping and control
WO2014116304A2 (en) 2012-08-23 2014-07-31 Applied Materials, Inc. Method and hardware for cleaning uv chambers
KR20150049180A (ko) 2013-10-29 2015-05-08 세메스 주식회사 기판 처리 장치
JP5726281B1 (ja) 2013-12-27 2015-05-27 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
KR20170048578A (ko) * 2014-09-05 2017-05-08 어플라이드 머티어리얼스, 인코포레이티드 분위기 에피택셜 퇴적 챔버
US9390910B2 (en) 2014-10-03 2016-07-12 Applied Materials, Inc. Gas flow profile modulated control of overlay in plasma CVD films
US10358722B2 (en) 2015-12-14 2019-07-23 Lam Research Corporation Showerhead assembly
KR102528559B1 (ko) * 2016-07-26 2023-05-04 삼성전자주식회사 대면적 기판 제조 장치

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012142329A (ja) * 2010-12-28 2012-07-26 Toshiba Corp 処理装置

Also Published As

Publication number Publication date
CN111066133B (zh) 2023-08-22
JP2020530527A (ja) 2020-10-22
US20210147981A1 (en) 2021-05-20
WO2019033052A1 (en) 2019-02-14
JP2023175682A (ja) 2023-12-12
JP7384784B2 (ja) 2023-11-21
US11939675B2 (en) 2024-03-26
KR20200030591A (ko) 2020-03-20
CN111066133A (zh) 2020-04-24

Similar Documents

Publication Publication Date Title
KR102697917B1 (ko) 열화학 기상 증착(cvd) 균일성을 개선하기 위한 장치 및 방법들
EP3275008B1 (en) Chamber components for epitaxial growth apparatus
US8980005B2 (en) Liner assembly for chemical vapor deposition chamber
US10145012B2 (en) Substrate processing apparatus and substrate processing method
US20120263875A1 (en) Method and Apparatus For Depositing A Material Layer Originating From Process Gas On A Substrate Wafer
US6403479B1 (en) Process for producing semiconductor and apparatus for production
CN106605288B (zh) 用于外延腔室的衬垫
EP4271852B1 (en) Systems and methods for a preheat ring in a semiconductor wafer reactor
US20020137334A1 (en) Process for producing semiconductor and apparatus for production
US20150299860A1 (en) Substrate treatment apparatus, and method for controlling temperature of heater
JP2015072989A (ja) 半導体製造装置および半導体製造方法
TWI754765B (zh) 用於磊晶沉積製程之注入組件
JP7607748B2 (ja) 化学気相堆積システム用ウインドウおよび関連方法
US12467144B2 (en) Methods of correlating zones of processing chambers, and related systems and methods
KR100966370B1 (ko) 화학 기상 증착 장치
KR20040091651A (ko) 반도체층의 증착방법과 장치
KR20230117432A (ko) 기상 성장 장치 및 기상 성장 방법
CN115537771A (zh) 用于沉积膜的化学气相沉积炉
KR20250121017A (ko) 기판 상에 SiC 층들을 증착하기 위한 방법 및 장치

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PX0901 Re-examination

St.27 status event code: A-2-3-E10-E12-rex-PX0901

PX0701 Decision of registration after re-examination

St.27 status event code: A-3-4-F10-F13-rex-PX0701

X701 Decision to grant (after re-examination)
GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601