CN111066133B - 用于改善热化学气相沉积(cvd)均匀性的设备和方法 - Google Patents

用于改善热化学气相沉积(cvd)均匀性的设备和方法 Download PDF

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CN111066133B
CN111066133B CN201880056745.6A CN201880056745A CN111066133B CN 111066133 B CN111066133 B CN 111066133B CN 201880056745 A CN201880056745 A CN 201880056745A CN 111066133 B CN111066133 B CN 111066133B
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surface region
emissivity
panel
density
holes
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CN111066133A (zh
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黄祖滨
程睿
K·嘉纳基拉曼
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Applied Materials Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
CN201880056745.6A 2017-08-11 2018-08-10 用于改善热化学气相沉积(cvd)均匀性的设备和方法 Active CN111066133B (zh)

Applications Claiming Priority (3)

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US201762544507P 2017-08-11 2017-08-11
US62/544,507 2017-08-11
PCT/US2018/046344 WO2019033052A1 (en) 2017-08-11 2018-08-10 APPARATUS AND METHODS FOR IMPROVING CHEMICAL VAPOR PHASE (CVD) DEPOSITION UNIFORMITY

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CN111066133A CN111066133A (zh) 2020-04-24
CN111066133B true CN111066133B (zh) 2023-08-22

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US (1) US11939675B2 (enExample)
JP (2) JP7384784B2 (enExample)
KR (1) KR102697917B1 (enExample)
CN (1) CN111066133B (enExample)
WO (1) WO2019033052A1 (enExample)

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KR102560283B1 (ko) * 2018-01-24 2023-07-26 삼성전자주식회사 샤워 헤드를 설계하고 제조하는 장치 및 방법
WO2020247269A1 (en) * 2019-06-07 2020-12-10 Applied Materials, Inc. Faceplate having a curved surface
KR20220071220A (ko) * 2019-09-27 2022-05-31 램 리써치 코포레이션 기판 지지부들의 온도 분포 프로파일들에 영향을 주는 튜닝 가능한 열 차폐부 (heat shield) 및 튜닝 불가능한 열 차폐부
US11600470B2 (en) 2019-12-27 2023-03-07 Applied Materials, Inc. Targeted heat control systems
US11810764B2 (en) * 2020-04-23 2023-11-07 Applied Materials, Inc. Faceplate with edge flow control
KR20210150978A (ko) * 2020-06-03 2021-12-13 에이에스엠 아이피 홀딩 비.브이. 샤워 플레이트, 기판 처리 장치 및 기판 처리 방법
DE102020123546A1 (de) 2020-09-09 2022-03-10 Aixtron Se CVD-Reaktor mit einer Kühlfläche mit bereichsweise vergrößerter Emissivität
US11946140B2 (en) 2021-03-26 2024-04-02 Applied Materials, Inc. Hot showerhead
USD1071103S1 (en) * 2022-04-11 2025-04-15 Applied Materials, Inc. Gas distribution plate
CN115125520B (zh) * 2022-08-09 2023-11-24 季华恒一(佛山)半导体科技有限公司 一种匀气板及镀膜装置

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US4134425A (en) * 1976-03-12 1979-01-16 Siemens Aktiengesellschaft Device for distributing flowing media over a flow cross section
US5133284A (en) * 1990-07-16 1992-07-28 National Semiconductor Corp. Gas-based backside protection during substrate processing
WO1999049101A1 (en) * 1998-03-23 1999-09-30 Mattson Technology, Inc. Apparatus and method for cvd and thermal processing of semiconductor substrates
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US6001175A (en) * 1995-03-03 1999-12-14 Maruyama; Mitsuhiro Crystal producing method and apparatus therefor
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WO2007018157A1 (ja) * 2005-08-05 2007-02-15 Tokyo Electron Limited 基板処理装置およびそれに用いる基板載置台
CN101005011A (zh) * 2001-03-28 2007-07-25 东京毅力科创株式会社 等离子体处理装置
CN102084461A (zh) * 2008-07-03 2011-06-01 应用材料公司 用于原子层沉积的设备
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US4134425A (en) * 1976-03-12 1979-01-16 Siemens Aktiengesellschaft Device for distributing flowing media over a flow cross section
US5133284A (en) * 1990-07-16 1992-07-28 National Semiconductor Corp. Gas-based backside protection during substrate processing
US6001175A (en) * 1995-03-03 1999-12-14 Maruyama; Mitsuhiro Crystal producing method and apparatus therefor
WO1999049101A1 (en) * 1998-03-23 1999-09-30 Mattson Technology, Inc. Apparatus and method for cvd and thermal processing of semiconductor substrates
JPH11279778A (ja) * 1998-03-30 1999-10-12 Seiko Epson Corp エッチング装置及び半導体装置の製造方法
CN1359531A (zh) * 1999-06-30 2002-07-17 兰姆研究公司 半导体加工的气体分布装置
CN101005011A (zh) * 2001-03-28 2007-07-25 东京毅力科创株式会社 等离子体处理装置
WO2007018157A1 (ja) * 2005-08-05 2007-02-15 Tokyo Electron Limited 基板処理装置およびそれに用いる基板載置台
CN102084461A (zh) * 2008-07-03 2011-06-01 应用材料公司 用于原子层沉积的设备
KR20120074878A (ko) * 2010-12-28 2012-07-06 피에스케이 주식회사 배플, 기판 처리 장치 및 그 처리 방법
JP2012142329A (ja) * 2010-12-28 2012-07-26 Toshiba Corp 処理装置
JP2012234904A (ja) * 2011-04-28 2012-11-29 Panasonic Corp 静電チャックおよびこれを備えるドライエッチング装置
CN103361635A (zh) * 2012-03-30 2013-10-23 三星电子株式会社 具有基座的化学气相沉积装置和半导体制造装置
WO2013163079A1 (en) * 2012-04-25 2013-10-31 Applied Materials, Inc. Faceplate having regions of differing emissivity
CN106715753A (zh) * 2014-09-05 2017-05-24 应用材料公司 常压外延沉积腔室
KR20170063943A (ko) * 2014-10-03 2017-06-08 어플라이드 머티어리얼스, 인코포레이티드 플라즈마 cvd 막들에서의 오버레이의 가스 유동 프로파일 조절식 제어
CN106906453A (zh) * 2015-12-14 2017-06-30 朗姆研究公司 喷头组件

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JP2020530527A (ja) 2020-10-22
US20210147981A1 (en) 2021-05-20
KR102697917B1 (ko) 2024-08-21
WO2019033052A1 (en) 2019-02-14
JP2023175682A (ja) 2023-12-12
JP7384784B2 (ja) 2023-11-21
US11939675B2 (en) 2024-03-26
KR20200030591A (ko) 2020-03-20
CN111066133A (zh) 2020-04-24

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