KR102676983B1 - 적층구조체 및 적층구조체의 제조방법 - Google Patents

적층구조체 및 적층구조체의 제조방법 Download PDF

Info

Publication number
KR102676983B1
KR102676983B1 KR1020227005805A KR20227005805A KR102676983B1 KR 102676983 B1 KR102676983 B1 KR 102676983B1 KR 1020227005805 A KR1020227005805 A KR 1020227005805A KR 20227005805 A KR20227005805 A KR 20227005805A KR 102676983 B1 KR102676983 B1 KR 102676983B1
Authority
KR
South Korea
Prior art keywords
substrate
oxide film
crystalline
crystalline oxide
main component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020227005805A
Other languages
English (en)
Korean (ko)
Other versions
KR20220052931A (ko
Inventor
타케노리 와타베
히로시 하시가미
마사유키 탄노
Original Assignee
신에쓰 가가꾸 고교 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 신에쓰 가가꾸 고교 가부시끼가이샤 filed Critical 신에쓰 가가꾸 고교 가부시끼가이샤
Publication of KR20220052931A publication Critical patent/KR20220052931A/ko
Application granted granted Critical
Publication of KR102676983B1 publication Critical patent/KR102676983B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/30—Niobates; Vanadates; Tantalates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3466—Crystal orientation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Thermal Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Dispersion Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
KR1020227005805A 2019-08-27 2020-06-05 적층구조체 및 적층구조체의 제조방법 Active KR102676983B1 (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2019155018 2019-08-27
JPJP-P-2019-155018 2019-08-27
JP2019156117 2019-08-28
JPJP-P-2019-156117 2019-08-28
JP2019162451 2019-09-05
JPJP-P-2019-162451 2019-09-05
PCT/JP2020/022282 WO2021039010A1 (ja) 2019-08-27 2020-06-05 積層構造体及び積層構造体の製造方法

Publications (2)

Publication Number Publication Date
KR20220052931A KR20220052931A (ko) 2022-04-28
KR102676983B1 true KR102676983B1 (ko) 2024-06-20

Family

ID=74683622

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227005805A Active KR102676983B1 (ko) 2019-08-27 2020-06-05 적층구조체 및 적층구조체의 제조방법

Country Status (7)

Country Link
US (1) US20220316091A1 (https=)
EP (1) EP4023794A4 (https=)
JP (1) JP7128970B2 (https=)
KR (1) KR102676983B1 (https=)
CN (1) CN114302982B (https=)
TW (1) TWI855141B (https=)
WO (1) WO2021039010A1 (https=)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016064961A (ja) 2014-09-25 2016-04-28 株式会社Flosfia 結晶性積層構造体の製造方法および半導体装置
JP2017010966A (ja) 2015-06-16 2017-01-12 株式会社Flosfia 結晶性半導体膜、積層構造体および半導体装置

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69531917T2 (de) * 1994-08-31 2004-08-19 Matsushita Electric Industrial Co., Ltd., Kadoma Verfahren zur Herstellung von invertierten Domänen und eines optischen Wellenlängenkonverters mit denselben
JPH103100A (ja) * 1996-04-15 1998-01-06 Matsushita Electric Ind Co Ltd 光導波路部品、光学部品、光導波路部品の製造方法および周期分極反転構造の製造方法
US8223427B2 (en) * 2006-03-17 2012-07-17 National Institute For Materials Science Method of fixing polarization-reversed region formed in ferroelectric single crystal
JP5948581B2 (ja) * 2011-09-08 2016-07-06 株式会社Flosfia Ｇａ２Ｏ３系半導体素子
JP2013088479A (ja) * 2011-10-13 2013-05-13 Panasonic Corp 波長変換素子、レーザ光源装置、画像表示装置及び波長変換素子の製造方法
JP5794955B2 (ja) 2012-07-11 2015-10-14 信越化学工業株式会社 β−Ｇａ２Ｏ３単結晶膜付基板の製造方法
JP5343224B1 (ja) 2012-09-28 2013-11-13 Ｒｏｃａ株式会社 半導体装置および結晶
JP5984069B2 (ja) 2013-09-30 2016-09-06 株式会社タムラ製作所 β−Ｇａ２Ｏ３系単結晶膜の成長方法、及び結晶積層構造体
US9379190B2 (en) * 2014-05-08 2016-06-28 Flosfia, Inc. Crystalline multilayer structure and semiconductor device
EP2942804B1 (en) * 2014-05-08 2017-07-12 Flosfia Inc. Crystalline multilayer structure and semiconductor device
JP6647521B2 (ja) * 2014-10-09 2020-02-14 株式会社Flosfia 導電性積層構造体の製造方法
JP5987229B2 (ja) 2015-03-09 2016-09-07 高知県公立大学法人 ドーパントを添加した結晶性の高い導電性α型酸化ガリウム薄膜およびその生成方法
JP6376600B2 (ja) * 2015-03-20 2018-08-22 株式会社タムラ製作所 結晶積層構造体の製造方法
JP2017005146A (ja) * 2015-06-11 2017-01-05 株式会社Flosfia 結晶性半導体膜、積層構造体および半導体装置
CN107068773B (zh) * 2015-12-18 2021-06-01 株式会社Flosfia 半导体装置
US20180097073A1 (en) * 2016-10-03 2018-04-05 Flosfia Inc. Semiconductor device and semiconductor system including semiconductor device
TWI798187B (zh) * 2016-10-11 2023-04-11 日本商出光興產股份有限公司 構造物、其製造方法、半導體元件及電子電路
JP6641317B2 (ja) * 2017-03-02 2020-02-05 不二越機械工業株式会社 単結晶製造装置
US10943981B2 (en) * 2017-08-24 2021-03-09 Flosfia Inc. Semiconductor device
JP7130962B2 (ja) * 2018-01-11 2022-09-06 株式会社デンソー 成膜方法及び成膜装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016064961A (ja) 2014-09-25 2016-04-28 株式会社Flosfia 結晶性積層構造体の製造方法および半導体装置
JP2017010966A (ja) 2015-06-16 2017-01-12 株式会社Flosfia 結晶性半導体膜、積層構造体および半導体装置

Also Published As

Publication number Publication date
US20220316091A1 (en) 2022-10-06
JP7128970B2 (ja) 2022-08-31
CN114302982B (zh) 2024-10-29
KR20220052931A (ko) 2022-04-28
EP4023794A4 (en) 2023-09-20
CN114302982A (zh) 2022-04-08
EP4023794A1 (en) 2022-07-06
TW202117055A (zh) 2021-05-01
JPWO2021039010A1 (https=) 2021-03-04
TWI855141B (zh) 2024-09-11
WO2021039010A1 (ja) 2021-03-04

Similar Documents

Publication Publication Date Title
JP6573206B2 (ja) 半導体装置
JP6680435B2 (ja) 剥離方法
JP7615270B2 (ja) 酸化物半導体膜の製造方法
KR102676983B1 (ko) 적층구조체 및 적층구조체의 제조방법
JP2025102965A (ja) 積層構造体、半導体装置及び下地基板
JP7161457B2 (ja) 積層構造体及び半導体装置並びに積層構造体の製造方法
JP7093329B2 (ja) 積層構造体、半導体装置及び半導体システム
JP7592131B2 (ja) 積層構造体
JP7161456B2 (ja) 積層構造体及び半導体装置並びに積層構造体の製造方法
JP7078583B2 (ja) 半導体装置及び半導体装置の製造方法
JP7078581B2 (ja) 積層構造体及び半導体装置並びに積層構造体の製造方法
JP7078582B2 (ja) 積層構造体、半導体装置及び結晶性酸化膜の成膜方法
JP7097861B2 (ja) 積層構造体、半導体装置及び半導体システム

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20220221

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20230515

Comment text: Request for Examination of Application

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20240513

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20240617

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20240618

End annual number: 3

Start annual number: 1

PG1601 Publication of registration