KR102669344B1 - 육방정 질화붕소막을 형성하는 방법 및 장치 - Google Patents

육방정 질화붕소막을 형성하는 방법 및 장치 Download PDF

Info

Publication number
KR102669344B1
KR102669344B1 KR1020217031878A KR20217031878A KR102669344B1 KR 102669344 B1 KR102669344 B1 KR 102669344B1 KR 1020217031878 A KR1020217031878 A KR 1020217031878A KR 20217031878 A KR20217031878 A KR 20217031878A KR 102669344 B1 KR102669344 B1 KR 102669344B1
Authority
KR
South Korea
Prior art keywords
plasma
substrate
gas
boron nitride
nitride film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020217031878A
Other languages
English (en)
Korean (ko)
Other versions
KR20210134745A (ko
Inventor
노부타케 가부키
마사히토 스기우라
다카시 마츠모토
겐지로 고이즈미
료타 이후쿠
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20210134745A publication Critical patent/KR20210134745A/ko
Application granted granted Critical
Publication of KR102669344B1 publication Critical patent/KR102669344B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H01L21/02274—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/342—Boron nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H01L21/02112—
    • H01L21/02205—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3241—Materials thereof being conductive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
KR1020217031878A 2019-03-15 2020-02-19 육방정 질화붕소막을 형성하는 방법 및 장치 Active KR102669344B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2019-048333 2019-03-15
JP2019048333A JP7253943B2 (ja) 2019-03-15 2019-03-15 六方晶窒化ホウ素膜を形成する方法および装置
PCT/JP2020/006483 WO2020189158A1 (ja) 2019-03-15 2020-02-19 六方晶窒化ホウ素膜を形成する方法および装置

Publications (2)

Publication Number Publication Date
KR20210134745A KR20210134745A (ko) 2021-11-10
KR102669344B1 true KR102669344B1 (ko) 2024-05-24

Family

ID=72430380

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217031878A Active KR102669344B1 (ko) 2019-03-15 2020-02-19 육방정 질화붕소막을 형성하는 방법 및 장치

Country Status (4)

Country Link
US (1) US20220165568A1 (https=)
JP (1) JP7253943B2 (https=)
KR (1) KR102669344B1 (https=)
WO (1) WO2020189158A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102771621B1 (ko) * 2019-09-03 2025-02-25 삼성전자주식회사 육방정계 질화붕소의 제조 방법
JP7425141B1 (ja) 2022-09-15 2024-01-30 アンリツ株式会社 プラズマエッチング装置及びグラフェン薄膜製造方法
JP2025092248A (ja) 2023-12-08 2025-06-19 東京エレクトロン株式会社 窒化ホウ素膜の成膜方法および成膜装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016145385A (ja) * 2015-02-06 2016-08-12 東京エレクトロン株式会社 成膜装置及び成膜方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61149478A (ja) * 1984-12-25 1986-07-08 Furukawa Mining Co Ltd 六方晶乃至立方晶の窒化ホウ素膜の製造方法
JPS63145777A (ja) 1986-12-08 1988-06-17 Katsumitsu Nakamura 六方晶窒化硼素膜の製造方法
JPH03199378A (ja) * 1989-12-28 1991-08-30 Sumitomo Electric Ind Ltd 窒化ホウ素薄膜の合成方法
JPH04202663A (ja) * 1990-11-30 1992-07-23 Sumitomo Electric Ind Ltd 窒化ホウ素膜形成方法および装置
JP2002016064A (ja) 2000-06-28 2002-01-18 Mitsubishi Heavy Ind Ltd 低誘電率六方晶窒化ホウ素膜、層間絶縁膜及びその製造方法
JP5013353B2 (ja) * 2001-03-28 2012-08-29 隆 杉野 成膜方法及び成膜装置
JP4916486B2 (ja) 2008-06-11 2012-04-11 日本電信電話株式会社 六方晶窒化ホウ素構造および製造方法
JP6254848B2 (ja) * 2014-01-10 2017-12-27 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
GB2534192B (en) * 2015-01-16 2019-10-23 Oxford Instruments Nanotechnology Tools Ltd Surface Processing Apparatus and Method
KR102395778B1 (ko) 2015-09-10 2022-05-09 삼성전자주식회사 나노구조체 형성방법과 이를 적용한 반도체소자의 제조방법 및 나노구조체를 포함하는 반도체소자
KR20170038499A (ko) * 2015-09-30 2017-04-07 한국과학기술연구원 원격 고주파 유도결합 플라즈마를 이용하여 저온에서 성장된 고품질 육방 질화 붕소막과 그 제조방법
JP2017084894A (ja) * 2015-10-26 2017-05-18 東京エレクトロン株式会社 ボロン窒化膜の形成方法および半導体装置の製造方法
US10658472B2 (en) 2016-05-12 2020-05-19 Globalwafers Co., Ltd. Direct formation of hexagonal boron nitride on silicon based dielectrics
EP3567005A4 (en) 2017-01-06 2020-07-29 Japan Science and Technology Agency HEXAGONAL BORON NITRIDE THIN FILM AND ITS MANUFACTURING METHOD
CN107217242B (zh) * 2017-05-20 2020-04-07 复旦大学 一种电子器件介电衬底的表面修饰方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016145385A (ja) * 2015-02-06 2016-08-12 東京エレクトロン株式会社 成膜装置及び成膜方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Jingyu Sun et al., "Recent progress in the tailored growth of two-dimensional hexagonal boron nitride via chemical vapour deposition", Chem. Soc. Rev., 2018, Vol.47, 4242 (2018.05.02.) 1부.*

Also Published As

Publication number Publication date
JP2020147826A (ja) 2020-09-17
JP7253943B2 (ja) 2023-04-07
US20220165568A1 (en) 2022-05-26
KR20210134745A (ko) 2021-11-10
WO2020189158A1 (ja) 2020-09-24

Similar Documents

Publication Publication Date Title
US11041239B2 (en) Film forming method for SiC film
KR102669344B1 (ko) 육방정 질화붕소막을 형성하는 방법 및 장치
Kim et al. Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
TWI356101B (https=)
KR101921359B1 (ko) 실리콘 질화물 막의 성막 방법 및 성막 장치
JP5851804B2 (ja) 前処理方法、グラフェンの形成方法及びグラフェン製造装置
KR101189495B1 (ko) 반도체 장치의 제조 방법 및 기판 처리 장치
CN100554506C (zh) 半导体处理用的成膜方法及装置
KR101676558B1 (ko) 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램
US20110091647A1 (en) Graphene synthesis by chemical vapor deposition
CN110265298B (zh) 半导体器件的制造方法、衬底处理装置
CN104805414A (zh) 半导体器件的制造方法及衬底处理装置
CN105390378A (zh) 半导体器件的制造方法及衬底处理装置
KR20080032174A (ko) 반도체 장치의 제조 방법 및 기판 처리 장치
JP2008258591A (ja) ケイ素含有膜の周期的プラズマ化学気相堆積
TW201220400A (en) Silicon nitride film-forming device and method
JP2010037128A (ja) グラファイト膜製造方法
JP2015124397A (ja) コンタクト層の形成方法
CN102549717A (zh) 结晶性硅膜的成膜方法和等离子体cvd装置
CN107204273A (zh) 半导体器件的制造方法、衬底处理装置及衬底处理方法
TW454266B (en) Method for producing silicon a series of nitride film
CN110228806A (zh) 利用等离子增强化学气相沉积法制备石墨烯薄膜的方法
Wu et al. Seven‐inch large‐size synthesis of monolayer hexagonal BN film by low‐pressure CVD
US20140193574A1 (en) Graphene manufacturing system and the method thereof
CN109573996B (zh) 氧化石墨烯沉积源及利用其的氧化石墨烯薄膜形成方法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

X091 Application refused [patent]
AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PX0901 Re-examination

St.27 status event code: A-2-3-E10-E12-rex-PX0901

PX0701 Decision of registration after re-examination

St.27 status event code: A-3-4-F10-F13-rex-PX0701

X701 Decision to grant (after re-examination)
GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000