KR102653894B1 - 기판 배면 손상을 감소시키기 위한 기판 지지부 - Google Patents

기판 배면 손상을 감소시키기 위한 기판 지지부 Download PDF

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Publication number
KR102653894B1
KR102653894B1 KR1020207010348A KR20207010348A KR102653894B1 KR 102653894 B1 KR102653894 B1 KR 102653894B1 KR 1020207010348 A KR1020207010348 A KR 1020207010348A KR 20207010348 A KR20207010348 A KR 20207010348A KR 102653894 B1 KR102653894 B1 KR 102653894B1
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South Korea
Prior art keywords
substrate
support
protrusions
support body
substrate support
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KR1020207010348A
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English (en)
Korean (ko)
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KR20200042012A (ko
Inventor
조엘 엠. 휴스턴
쳉-시웅 차이
구오-추안 추
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H01L21/683—
    • H01L21/67103—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3308—Vertical transfer of a single workpiece
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7614—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020207010348A 2017-09-13 2018-09-11 기판 배면 손상을 감소시키기 위한 기판 지지부 Active KR102653894B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/703,961 US11955362B2 (en) 2017-09-13 2017-09-13 Substrate support for reduced damage substrate backside
US15/703,961 2017-09-13
PCT/US2018/050446 WO2019055406A1 (en) 2017-09-13 2018-09-11 SUBSTRATE CARRIER FOR REAR-DETAILED SUBSTRATE SUBFACE

Publications (2)

Publication Number Publication Date
KR20200042012A KR20200042012A (ko) 2020-04-22
KR102653894B1 true KR102653894B1 (ko) 2024-04-01

Family

ID=65631487

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020207010348A Active KR102653894B1 (ko) 2017-09-13 2018-09-11 기판 배면 손상을 감소시키기 위한 기판 지지부

Country Status (6)

Country Link
US (1) US11955362B2 (https=)
JP (1) JP7438104B2 (https=)
KR (1) KR102653894B1 (https=)
CN (1) CN111183512B (https=)
TW (1) TWI823865B (https=)
WO (1) WO2019055406A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10654147B2 (en) * 2017-10-17 2020-05-19 Applied Materials, Inc. Polishing of electrostatic substrate support geometries
US11309177B2 (en) * 2018-11-06 2022-04-19 Stmicroelectronics S.R.L. Apparatus and method for manufacturing a wafer
IT201900015416A1 (it) 2019-09-03 2021-03-03 St Microelectronics Srl Apparecchio per la crescita di una fetta di materiale semiconduttore, in particolare di carburo di silicio, e procedimento di fabbricazione associato
US12068137B2 (en) 2020-09-25 2024-08-20 Applied Materials, Inc. Thread profiles for semiconductor process chamber components
US11515195B2 (en) * 2020-10-26 2022-11-29 Applied Materials, Inc. Semiconductor chamber components with high-performance coating
JP7807888B2 (ja) * 2021-09-17 2026-01-28 株式会社Ｓｃｒｅｅｎホールディングス 熱処理用サセプタ、および、熱処理装置
US12412774B2 (en) 2022-06-13 2025-09-09 Applied Materials, Inc. Tab arrangement for retaining support elements of substrate support
US20240213078A1 (en) * 2022-12-22 2024-06-27 Applied Materials, Inc. Substrate supports and transfer apparatus for substrate deformation

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000332091A (ja) * 1999-05-25 2000-11-30 Toto Ltd 静電チャックおよび処理装置
JP2011155137A (ja) * 2010-01-27 2011-08-11 Tokyo Electron Ltd 基板加熱装置および基板加熱方法、ならびに基板処理システム
JP2014060421A (ja) * 2008-08-12 2014-04-03 Applied Materials Inc 静電チャックアセンブリ

Family Cites Families (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2806650B2 (ja) 1991-08-19 1998-09-30 東京エレクトロン株式会社 温度調整装置
JPH0758041A (ja) 1993-08-20 1995-03-03 Toshiba Ceramics Co Ltd サセプタ
JPH08279548A (ja) 1993-12-28 1996-10-22 Sharp Corp ホットプレート型のプロキシミティベーク炉に使用するピン及びそれを使用した炉
FR2731943B1 (fr) 1995-03-24 1997-07-18 Atochem Elf Sa Materiau complexe a proprietes ameliorees constitue de polyfluorure de vinylidene et d'un thermoplastique non compatible
JP3028462B2 (ja) 1995-05-12 2000-04-04 東京エレクトロン株式会社 熱処理装置
US5761023A (en) 1996-04-25 1998-06-02 Applied Materials, Inc. Substrate support with pressure zones having reduced contact area and temperature feedback
US5720818A (en) * 1996-04-26 1998-02-24 Applied Materials, Inc. Conduits for flow of heat transfer fluid to the surface of an electrostatic chuck
EP0803900A3 (en) 1996-04-26 1999-12-29 Applied Materials, Inc. Surface preparation to enhance the adhesion of a dielectric layer
US6170428B1 (en) 1996-07-15 2001-01-09 Applied Materials, Inc. Symmetric tunable inductively coupled HDP-CVD reactor
JPH10242255A (ja) 1997-02-28 1998-09-11 Kyocera Corp 真空吸着装置
US6189483B1 (en) 1997-05-29 2001-02-20 Applied Materials, Inc. Process kit
US6077357A (en) 1997-05-29 2000-06-20 Applied Materials, Inc. Orientless wafer processing on an electrostatic chuck
US6320736B1 (en) 1999-05-17 2001-11-20 Applied Materials, Inc. Chuck having pressurized zones of heat transfer gas
US6461980B1 (en) 2000-01-28 2002-10-08 Applied Materials, Inc. Apparatus and process for controlling the temperature of a substrate in a plasma reactor chamber
JP2005033221A (ja) 2001-02-08 2005-02-03 Tokyo Electron Ltd 基板載置台および処理装置
JP2002261156A (ja) 2001-03-02 2002-09-13 Hitachi Kokusai Electric Inc 基板処理装置
KR100798179B1 (ko) * 2001-04-27 2008-01-24 교세라 가부시키가이샤 웨이퍼 가열장치
US6682603B2 (en) 2002-05-07 2004-01-27 Applied Materials Inc. Substrate support with extended radio frequency electrode upper surface
US20040163601A1 (en) 2003-02-26 2004-08-26 Masanori Kadotani Plasma processing apparatus
US6944006B2 (en) 2003-04-03 2005-09-13 Applied Materials, Inc. Guard for electrostatic chuck
JP4470199B2 (ja) 2003-09-25 2010-06-02 Ｓｍｃ株式会社 半導体基板の温度調節装置
US7697260B2 (en) 2004-03-31 2010-04-13 Applied Materials, Inc. Detachable electrostatic chuck
JP2006093203A (ja) 2004-09-21 2006-04-06 Nitto Denko Corp 円形平面基板の吸着支持装置
US7396412B2 (en) * 2004-12-22 2008-07-08 Sokudo Co., Ltd. Coat/develop module with shared dispense
KR20070091332A (ko) 2005-01-18 2007-09-10 에이에스엠 아메리카, 인코포레이티드 웨이퍼 지지핀 어셈블리
JP4613093B2 (ja) 2005-05-09 2011-01-12 株式会社エムテーシー 薄膜形成装置
JP4666473B2 (ja) * 2005-05-12 2011-04-06 大日本スクリーン製造株式会社 基板熱処理装置
US7705275B2 (en) 2005-08-17 2010-04-27 Applied Materials, Inc. Substrate support having brazed plates and resistance heater
JP2007158077A (ja) * 2005-12-06 2007-06-21 Dainippon Screen Mfg Co Ltd 基板熱処理装置
JP4666496B2 (ja) * 2005-12-07 2011-04-06 大日本スクリーン製造株式会社 基板熱処理装置
US7589950B2 (en) 2006-10-13 2009-09-15 Applied Materials, Inc. Detachable electrostatic chuck having sealing assembly
JP5967859B2 (ja) * 2006-11-15 2016-08-10 マトソン テクノロジー、インコーポレイテッド 熱処理中の被加工物を支持するシステムおよび方法
US9013682B2 (en) * 2007-06-21 2015-04-21 Asml Netherlands B.V. Clamping device and object loading method
KR101405346B1 (ko) * 2008-01-04 2014-06-12 삼성디스플레이 주식회사 기판 지지대, 이를 포함하는 기판 처리 장치 및 기판 정렬방법
US8198567B2 (en) 2008-01-15 2012-06-12 Applied Materials, Inc. High temperature vacuum chuck assembly
WO2010010087A1 (de) 2008-07-21 2010-01-28 Vita Zahnfabrik H. Rauter Gmbh & Co. Kg Poröser silikat-keramischer körper, dentalrestauration sowie verfahren zur herstellung davon
KR20100010340A (ko) 2008-07-22 2010-02-01 현대자동차주식회사 롤 오버 방지용 쇽 업소버
JP2010219113A (ja) * 2009-03-13 2010-09-30 Dainippon Screen Mfg Co Ltd 支持ピン、熱処理装置および熱処理システム
US8258651B2 (en) 2010-03-01 2012-09-04 International Truck Intellectual Property Company, Llc Methods and circuits for controlling a battery disconnect switch
US8721791B2 (en) * 2010-07-28 2014-05-13 Applied Materials, Inc. Showerhead support structure for improved gas flow
KR101282873B1 (ko) * 2011-05-06 2013-07-05 (주)티티에스 기판 지지 유닛
US9337067B2 (en) * 2011-05-13 2016-05-10 Novellus Systems, Inc. High temperature electrostatic chuck with radial thermal chokes
KR20140070049A (ko) 2012-11-30 2014-06-10 삼성디스플레이 주식회사 기판 지지 유닛 및 이를 갖는 기판 처리 장치
US9633889B2 (en) * 2013-03-06 2017-04-25 Applied Materials, Inc. Substrate support with integrated vacuum and edge purge conduits
CN105247597B (zh) * 2013-06-11 2018-04-10 英派尔科技开发有限公司 显示设备及其使用方法
JP6148084B2 (ja) 2013-06-26 2017-06-14 京セラ株式会社 吸着部材
US9558981B2 (en) 2013-11-19 2017-01-31 Applied Materials, Inc. Control systems employing deflection sensors to control clamping forces applied by electrostatic chucks, and related methods
JP6684710B2 (ja) 2013-11-22 2020-04-22 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 静電チャック表面向けのパッド設計
CN103779166A (zh) 2014-01-17 2014-05-07 北京京东方光电科技有限公司 一种刻蚀设备反应腔的电极和刻蚀设备
JP2017005209A (ja) 2015-06-15 2017-01-05 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
US10490436B2 (en) 2015-11-04 2019-11-26 Applied Materials, Inc. Enhanced lift pin design to eliminate local thickness non-uniformity in teos oxide films
TWI734739B (zh) 2016-02-10 2021-08-01 美商恩特葛瑞斯股份有限公司 具有改善粒子效能的晶圓接觸表面突出輪廓
TW201742183A (zh) 2016-05-30 2017-12-01 沈境植 分離型基板升降銷
CN107749407B (zh) * 2017-09-22 2020-08-28 沈阳拓荆科技有限公司 晶圆承载盘及其支撑结构

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000332091A (ja) * 1999-05-25 2000-11-30 Toto Ltd 静電チャックおよび処理装置
JP2014060421A (ja) * 2008-08-12 2014-04-03 Applied Materials Inc 静電チャックアセンブリ
JP2011155137A (ja) * 2010-01-27 2011-08-11 Tokyo Electron Ltd 基板加熱装置および基板加熱方法、ならびに基板処理システム

Also Published As

Publication number Publication date
US11955362B2 (en) 2024-04-09
KR20200042012A (ko) 2020-04-22
JP2020533806A (ja) 2020-11-19
WO2019055406A1 (en) 2019-03-21
CN111183512A (zh) 2020-05-19
CN111183512B (zh) 2023-09-26
US20190080951A1 (en) 2019-03-14
TW201921584A (zh) 2019-06-01
JP7438104B2 (ja) 2024-02-26
TWI823865B (zh) 2023-12-01

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