KR102517771B1 - 양두 연삭 방법 - Google Patents

양두 연삭 방법 Download PDF

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Publication number
KR102517771B1
KR102517771B1 KR1020217018567A KR20217018567A KR102517771B1 KR 102517771 B1 KR102517771 B1 KR 102517771B1 KR 1020217018567 A KR1020217018567 A KR 1020217018567A KR 20217018567 A KR20217018567 A KR 20217018567A KR 102517771 B1 KR102517771 B1 KR 102517771B1
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KR
South Korea
Prior art keywords
grinding
ground
wafer
thickness
nanotopography
Prior art date
Application number
KR1020217018567A
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English (en)
Korean (ko)
Other versions
KR20210089770A (ko
Inventor
요시노부 니시무라
Original Assignee
가부시키가이샤 사무코
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Application filed by 가부시키가이샤 사무코 filed Critical 가부시키가이샤 사무코
Publication of KR20210089770A publication Critical patent/KR20210089770A/ko
Application granted granted Critical
Publication of KR102517771B1 publication Critical patent/KR102517771B1/ko

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • H01L21/02005Preparing bulk and homogeneous wafers
    • H01L21/02008Multistep processes
    • H01L21/0201Specific process step
    • H01L21/02013Grinding, lapping
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/10Single-purpose machines or devices
    • B24B7/16Single-purpose machines or devices for grinding end-faces, e.g. of gauges, rollers, nuts, piston rings
    • B24B7/17Single-purpose machines or devices for grinding end-faces, e.g. of gauges, rollers, nuts, piston rings for simultaneously grinding opposite and parallel end faces, e.g. double disc grinders
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B24B49/03Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent according to the final size of the previously ground workpiece
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B24B49/04Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020217018567A 2018-12-27 2019-11-08 양두 연삭 방법 KR102517771B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018245302A JP7159861B2 (ja) 2018-12-27 2018-12-27 両頭研削方法
JPJP-P-2018-245302 2018-12-27
PCT/JP2019/043882 WO2020137187A1 (ja) 2018-12-27 2019-11-08 両頭研削方法

Publications (2)

Publication Number Publication Date
KR20210089770A KR20210089770A (ko) 2021-07-16
KR102517771B1 true KR102517771B1 (ko) 2023-04-03

Family

ID=71128947

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217018567A KR102517771B1 (ko) 2018-12-27 2019-11-08 양두 연삭 방법

Country Status (6)

Country Link
JP (1) JP7159861B2 (zh)
KR (1) KR102517771B1 (zh)
CN (1) CN113396030B (zh)
DE (1) DE112019006452T5 (zh)
TW (1) TWI702115B (zh)
WO (1) WO2020137187A1 (zh)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009016842A (ja) 2007-07-04 2009-01-22 Siltronic Ag 半導体ウェハを研削する方法
JP2015155129A (ja) 2014-02-20 2015-08-27 信越半導体株式会社 ワークの両頭研削方法
WO2017061486A1 (ja) 2015-10-09 2017-04-13 株式会社Sumco キャリアリング、研削装置および研削方法

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JPS5256018A (en) * 1975-11-05 1977-05-09 Kouka Kuroomu Kougiyou Kk Method of manufacturing continuous casting mould for steel
JP2000024892A (ja) 1998-07-15 2000-01-25 Nippei Toyama Corp 両頭平面研削装置
JP2006040947A (ja) * 2004-07-22 2006-02-09 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP4752475B2 (ja) * 2005-12-08 2011-08-17 信越半導体株式会社 半導体ウェーハの両頭研削装置、静圧パッドおよびこれを用いた両頭研削方法
EP1981685B1 (en) * 2006-01-30 2012-05-30 MEMC Electronic Materials, Inc. Double side wafer grinder and methods for assessing workpiece nanotopology
CN100467219C (zh) * 2006-07-10 2009-03-11 中芯国际集成电路制造(上海)有限公司 化学机械研磨方法
JP4985451B2 (ja) * 2008-02-14 2012-07-25 信越半導体株式会社 ワークの両頭研削装置およびワークの両頭研削方法
JP5463570B2 (ja) * 2008-10-31 2014-04-09 Sumco Techxiv株式会社 ウェハ用両頭研削装置および両頭研削方法
JP5357672B2 (ja) * 2009-09-07 2013-12-04 株式会社ディスコ 研削方法
DE102009048436B4 (de) * 2009-10-07 2012-12-20 Siltronic Ag Verfahren zum Schleifen einer Halbleiterscheibe
CN101722477B (zh) * 2009-10-16 2011-09-14 青岛理工大学 一种纳米流体磨削工艺
JP5439217B2 (ja) 2010-02-15 2014-03-12 信越半導体株式会社 両頭研削装置用リング状ホルダーおよび両頭研削装置
US8712575B2 (en) * 2010-03-26 2014-04-29 Memc Electronic Materials, Inc. Hydrostatic pad pressure modulation in a simultaneous double side wafer grinder
DE102010013520B4 (de) * 2010-03-31 2013-02-07 Siltronic Ag Verfahren zur beidseitigen Politur einer Halbleiterscheibe
DE102010013519B4 (de) * 2010-03-31 2012-12-27 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe
JP5494552B2 (ja) 2011-04-15 2014-05-14 信越半導体株式会社 両頭研削方法及び両頭研削装置
DE102011082777A1 (de) * 2011-09-15 2012-02-09 Siltronic Ag Verfahren zum beidseitigen Polieren einer Halbleiterscheibe
JP5724958B2 (ja) * 2012-07-03 2015-05-27 信越半導体株式会社 両頭研削装置及びワークの両頭研削方法
SG2012096699A (en) * 2012-12-31 2014-07-30 Agency Science Tech & Res Amphiphilic linear peptide/peptoid and hydrogel comprising the same
JP2014204092A (ja) * 2013-04-10 2014-10-27 株式会社岡本工作機械製作所 被研削材を研削加工する方法
JP6316652B2 (ja) * 2014-05-14 2018-04-25 株式会社ディスコ 研削装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009016842A (ja) 2007-07-04 2009-01-22 Siltronic Ag 半導体ウェハを研削する方法
JP2015155129A (ja) 2014-02-20 2015-08-27 信越半導体株式会社 ワークの両頭研削方法
WO2017061486A1 (ja) 2015-10-09 2017-04-13 株式会社Sumco キャリアリング、研削装置および研削方法

Also Published As

Publication number Publication date
KR20210089770A (ko) 2021-07-16
TWI702115B (zh) 2020-08-21
CN113396030A (zh) 2021-09-14
JP7159861B2 (ja) 2022-10-25
TW202037456A (zh) 2020-10-16
DE112019006452T5 (de) 2021-09-09
CN113396030B (zh) 2023-07-21
JP2020104211A (ja) 2020-07-09
WO2020137187A1 (ja) 2020-07-02

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