JP7159861B2 - 両頭研削方法 - Google Patents

両頭研削方法 Download PDF

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Publication number
JP7159861B2
JP7159861B2 JP2018245302A JP2018245302A JP7159861B2 JP 7159861 B2 JP7159861 B2 JP 7159861B2 JP 2018245302 A JP2018245302 A JP 2018245302A JP 2018245302 A JP2018245302 A JP 2018245302A JP 7159861 B2 JP7159861 B2 JP 7159861B2
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JP
Japan
Prior art keywords
grinding
ground
thickness
wafer
nanotopography
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2018245302A
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English (en)
Japanese (ja)
Other versions
JP2020104211A (ja
Inventor
好信 西村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
Original Assignee
Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Priority to JP2018245302A priority Critical patent/JP7159861B2/ja
Priority to TW108140396A priority patent/TWI702115B/zh
Priority to CN201980086217.XA priority patent/CN113396030B/zh
Priority to DE112019006452.5T priority patent/DE112019006452T5/de
Priority to KR1020217018567A priority patent/KR102517771B1/ko
Priority to PCT/JP2019/043882 priority patent/WO2020137187A1/ja
Publication of JP2020104211A publication Critical patent/JP2020104211A/ja
Application granted granted Critical
Publication of JP7159861B2 publication Critical patent/JP7159861B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/10—Single-purpose machines or devices
    • B24B7/16—Single-purpose machines or devices for grinding end-faces, e.g. of gauges, rollers, nuts, piston rings
    • B24B7/17—Single-purpose machines or devices for grinding end-faces, e.g. of gauges, rollers, nuts, piston rings for simultaneously grinding opposite and parallel end faces, e.g. double disc grinders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B24B49/03—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent according to the final size of the previously ground workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2018245302A 2018-12-27 2018-12-27 両頭研削方法 Active JP7159861B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2018245302A JP7159861B2 (ja) 2018-12-27 2018-12-27 両頭研削方法
TW108140396A TWI702115B (zh) 2018-12-27 2019-11-07 兩頭研磨方法
CN201980086217.XA CN113396030B (zh) 2018-12-27 2019-11-08 两头磨削方法
DE112019006452.5T DE112019006452T5 (de) 2018-12-27 2019-11-08 Doppel-schleifverfahren
KR1020217018567A KR102517771B1 (ko) 2018-12-27 2019-11-08 양두 연삭 방법
PCT/JP2019/043882 WO2020137187A1 (ja) 2018-12-27 2019-11-08 両頭研削方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018245302A JP7159861B2 (ja) 2018-12-27 2018-12-27 両頭研削方法

Publications (2)

Publication Number Publication Date
JP2020104211A JP2020104211A (ja) 2020-07-09
JP7159861B2 true JP7159861B2 (ja) 2022-10-25

Family

ID=71128947

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018245302A Active JP7159861B2 (ja) 2018-12-27 2018-12-27 両頭研削方法

Country Status (6)

Country Link
JP (1) JP7159861B2 (zh)
KR (1) KR102517771B1 (zh)
CN (1) CN113396030B (zh)
DE (1) DE112019006452T5 (zh)
TW (1) TWI702115B (zh)
WO (1) WO2020137187A1 (zh)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000024892A (ja) 1998-07-15 2000-01-25 Nippei Toyama Corp 両頭平面研削装置
JP2009016842A (ja) 2007-07-04 2009-01-22 Siltronic Ag 半導体ウェハを研削する方法
JP5439217B2 (ja) 2010-02-15 2014-03-12 信越半導体株式会社 両頭研削装置用リング状ホルダーおよび両頭研削装置
JP5494552B2 (ja) 2011-04-15 2014-05-14 信越半導体株式会社 両頭研削方法及び両頭研削装置
JP6040947B2 (ja) 2014-02-20 2016-12-07 信越半導体株式会社 ワークの両頭研削方法
WO2017061486A1 (ja) 2015-10-09 2017-04-13 株式会社Sumco キャリアリング、研削装置および研削方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5256018A (en) * 1975-11-05 1977-05-09 Kouka Kuroomu Kougiyou Kk Method of manufacturing continuous casting mould for steel
JP2006040947A (ja) * 2004-07-22 2006-02-09 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP4752475B2 (ja) * 2005-12-08 2011-08-17 信越半導体株式会社 半導体ウェーハの両頭研削装置、静圧パッドおよびこれを用いた両頭研削方法
EP1981685B1 (en) * 2006-01-30 2012-05-30 MEMC Electronic Materials, Inc. Double side wafer grinder and methods for assessing workpiece nanotopology
CN100467219C (zh) * 2006-07-10 2009-03-11 中芯国际集成电路制造(上海)有限公司 化学机械研磨方法
JP4985451B2 (ja) * 2008-02-14 2012-07-25 信越半導体株式会社 ワークの両頭研削装置およびワークの両頭研削方法
JP5463570B2 (ja) * 2008-10-31 2014-04-09 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 ウェハ用両頭研削装置および両頭研削方法
JP5357672B2 (ja) * 2009-09-07 2013-12-04 株式会社ディスコ 研削方法
DE102009048436B4 (de) * 2009-10-07 2012-12-20 Siltronic Ag Verfahren zum Schleifen einer Halbleiterscheibe
CN101722477B (zh) * 2009-10-16 2011-09-14 青岛理工大学 一种纳米流体磨削工艺
US8712575B2 (en) * 2010-03-26 2014-04-29 Memc Electronic Materials, Inc. Hydrostatic pad pressure modulation in a simultaneous double side wafer grinder
DE102010013520B4 (de) * 2010-03-31 2013-02-07 Siltronic Ag Verfahren zur beidseitigen Politur einer Halbleiterscheibe
DE102010013519B4 (de) * 2010-03-31 2012-12-27 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe
DE102011082777A1 (de) * 2011-09-15 2012-02-09 Siltronic Ag Verfahren zum beidseitigen Polieren einer Halbleiterscheibe
JP5724958B2 (ja) * 2012-07-03 2015-05-27 信越半導体株式会社 両頭研削装置及びワークの両頭研削方法
SG2012096699A (en) * 2012-12-31 2014-07-30 Agency Science Tech & Res Amphiphilic linear peptide/peptoid and hydrogel comprising the same
JP2014204092A (ja) * 2013-04-10 2014-10-27 株式会社岡本工作機械製作所 被研削材を研削加工する方法
JP6316652B2 (ja) * 2014-05-14 2018-04-25 株式会社ディスコ 研削装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000024892A (ja) 1998-07-15 2000-01-25 Nippei Toyama Corp 両頭平面研削装置
JP2009016842A (ja) 2007-07-04 2009-01-22 Siltronic Ag 半導体ウェハを研削する方法
JP5439217B2 (ja) 2010-02-15 2014-03-12 信越半導体株式会社 両頭研削装置用リング状ホルダーおよび両頭研削装置
JP5494552B2 (ja) 2011-04-15 2014-05-14 信越半導体株式会社 両頭研削方法及び両頭研削装置
JP6040947B2 (ja) 2014-02-20 2016-12-07 信越半導体株式会社 ワークの両頭研削方法
WO2017061486A1 (ja) 2015-10-09 2017-04-13 株式会社Sumco キャリアリング、研削装置および研削方法

Also Published As

Publication number Publication date
KR20210089770A (ko) 2021-07-16
TWI702115B (zh) 2020-08-21
CN113396030A (zh) 2021-09-14
TW202037456A (zh) 2020-10-16
DE112019006452T5 (de) 2021-09-09
CN113396030B (zh) 2023-07-21
JP2020104211A (ja) 2020-07-09
WO2020137187A1 (ja) 2020-07-02
KR102517771B1 (ko) 2023-04-03

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