KR102500133B1 - 성막 방법 및 성막 장치 - Google Patents

성막 방법 및 성막 장치 Download PDF

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Publication number
KR102500133B1
KR102500133B1 KR1020200165339A KR20200165339A KR102500133B1 KR 102500133 B1 KR102500133 B1 KR 102500133B1 KR 1020200165339 A KR1020200165339 A KR 1020200165339A KR 20200165339 A KR20200165339 A KR 20200165339A KR 102500133 B1 KR102500133 B1 KR 102500133B1
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KR
South Korea
Prior art keywords
substrate
film
etching
film formation
film forming
Prior art date
Application number
KR1020200165339A
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English (en)
Korean (ko)
Other versions
KR20210068996A (ko
Inventor
토시하루 우치다
유키오 마츠모토
Original Assignee
캐논 톡키 가부시키가이샤
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Publication of KR20210068996A publication Critical patent/KR20210068996A/ko
Application granted granted Critical
Publication of KR102500133B1 publication Critical patent/KR102500133B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/225—Oblique incidence of vaporised material on substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5826—Treatment with charged particles
    • C23C14/5833—Ion beam bombardment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5873—Removal of material

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020200165339A 2019-12-02 2020-12-01 성막 방법 및 성막 장치 KR102500133B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2019-218109 2019-12-02
JP2019218109A JP7382809B2 (ja) 2019-12-02 2019-12-02 成膜方法及び成膜装置

Publications (2)

Publication Number Publication Date
KR20210068996A KR20210068996A (ko) 2021-06-10
KR102500133B1 true KR102500133B1 (ko) 2023-02-14

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020200165339A KR102500133B1 (ko) 2019-12-02 2020-12-01 성막 방법 및 성막 장치

Country Status (3)

Country Link
JP (1) JP7382809B2 (ja)
KR (1) KR102500133B1 (ja)
CN (1) CN112981331B (ja)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006289261A (ja) * 2005-04-11 2006-10-26 Ebara Corp 表面洗浄方法および装置
JP2009530500A (ja) * 2006-03-21 2009-08-27 サンドビック インテレクチュアル プロパティー アクティエボラーグ 連続堆積ラインにおけるエッジ被覆

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001118294A (ja) * 1999-10-19 2001-04-27 Canon Inc 光磁気記録媒体およびその製造方法
CA2423527A1 (en) * 2002-03-26 2003-09-26 Nippon Sheet Glass Co., Ltd. Method for forming micro groove structure
JP2005256119A (ja) * 2004-03-12 2005-09-22 Ricoh Opt Ind Co Ltd 成膜装置
WO2005098081A1 (ja) 2004-04-09 2005-10-20 Ulvac, Inc. 成膜装置および成膜方法
EP2079103A4 (en) * 2006-10-30 2010-05-26 Japan Aviation Electron PROCESS FOR MACHINING A SOLID SURFACE WITH A GAS CLUSTER ION BEAM
JP2010204626A (ja) 2009-02-05 2010-09-16 Asahi Glass Co Ltd ワイヤグリッド型偏光子およびその製造方法
JP2010272229A (ja) 2009-05-19 2010-12-02 Panasonic Corp 有機電界発光素子の透明電極の製造方法
JP2011017034A (ja) 2009-07-07 2011-01-27 Seiko Epson Corp スパッタリング装置および液晶装置の製造装置
CN105088154B (zh) * 2010-06-25 2018-05-18 佳能安内华股份有限公司 溅射设备、膜沉积方法和控制装置
JP2013227625A (ja) * 2012-04-26 2013-11-07 Canon Inc 成膜方法及び成膜装置
US9347127B2 (en) 2012-07-16 2016-05-24 Veeco Instruments, Inc. Film deposition assisted by angular selective etch on a surface
US9530674B2 (en) * 2013-10-02 2016-12-27 Applied Materials, Inc. Method and system for three-dimensional (3D) structure fill
CN105849870B (zh) * 2013-12-25 2018-09-28 佳能安内华股份有限公司 基板加工方法及半导体装置的制造方法
KR101943553B1 (ko) * 2014-11-25 2019-04-18 삼성전자주식회사 좌우 대칭의 이온 빔을 이용한 패턴 형성 방법, 이를 이용한 자기 기억 소자의 제조방법, 및 좌우 대칭의 이온 빔을 발생시키는 이온 빔 장비
JP6556822B2 (ja) 2017-12-26 2019-08-07 キヤノントッキ株式会社 基板処理方法、基板処理装置、及び、成膜装置
JP6567119B1 (ja) * 2018-03-27 2019-08-28 キヤノントッキ株式会社 基板処理装置及びその制御方法、成膜装置、電子部品の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006289261A (ja) * 2005-04-11 2006-10-26 Ebara Corp 表面洗浄方法および装置
JP2009530500A (ja) * 2006-03-21 2009-08-27 サンドビック インテレクチュアル プロパティー アクティエボラーグ 連続堆積ラインにおけるエッジ被覆

Also Published As

Publication number Publication date
CN112981331B (zh) 2024-03-08
JP7382809B2 (ja) 2023-11-17
KR20210068996A (ko) 2021-06-10
JP2021088733A (ja) 2021-06-10
CN112981331A (zh) 2021-06-18

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