KR102498453B1 - 발광 디바이스 및 그 제조 방법 - Google Patents

발광 디바이스 및 그 제조 방법 Download PDF

Info

Publication number
KR102498453B1
KR102498453B1 KR1020190056461A KR20190056461A KR102498453B1 KR 102498453 B1 KR102498453 B1 KR 102498453B1 KR 1020190056461 A KR1020190056461 A KR 1020190056461A KR 20190056461 A KR20190056461 A KR 20190056461A KR 102498453 B1 KR102498453 B1 KR 102498453B1
Authority
KR
South Korea
Prior art keywords
light emitting
substrate
emitting elements
emitting element
adhesive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020190056461A
Other languages
English (en)
Korean (ko)
Other versions
KR20190130518A (ko
Inventor
민-순 시에
Original Assignee
에피스타 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에피스타 코포레이션 filed Critical 에피스타 코포레이션
Publication of KR20190130518A publication Critical patent/KR20190130518A/ko
Priority to KR1020230015617A priority Critical patent/KR102688372B1/ko
Application granted granted Critical
Publication of KR102498453B1 publication Critical patent/KR102498453B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H01L33/005
    • H01L27/156
    • H01L33/20
    • H01L33/36
    • H01L33/62
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/8506Containers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/857Interconnections, e.g. lead-frames, bond wires or solder balls
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • H10H20/0364Manufacture or treatment of packages of interconnections
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/0198Manufacture or treatment batch processes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/072Connecting or disconnecting of bump connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/072Connecting or disconnecting of bump connectors
    • H10W72/07202Connecting or disconnecting of bump connectors using auxiliary members
    • H10W72/07204Connecting or disconnecting of bump connectors using auxiliary members using temporary auxiliary members, e.g. sacrificial coatings
    • H10W72/07207Temporary substrates, e.g. removable substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills

Landscapes

  • Led Device Packages (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Supply And Installment Of Electrical Components (AREA)
  • Planar Illumination Modules (AREA)
KR1020190056461A 2018-05-14 2019-05-14 발광 디바이스 및 그 제조 방법 Active KR102498453B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020230015617A KR102688372B1 (ko) 2018-05-14 2023-02-06 발광 디바이스 및 그 제조 방법

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201862670900P 2018-05-14 2018-05-14
US62/670,900 2018-05-14
US201862697387P 2018-07-12 2018-07-12
US62/697,387 2018-07-12

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020230015617A Division KR102688372B1 (ko) 2018-05-14 2023-02-06 발광 디바이스 및 그 제조 방법

Publications (2)

Publication Number Publication Date
KR20190130518A KR20190130518A (ko) 2019-11-22
KR102498453B1 true KR102498453B1 (ko) 2023-02-09

Family

ID=68337028

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020190056461A Active KR102498453B1 (ko) 2018-05-14 2019-05-14 발광 디바이스 및 그 제조 방법
KR1020230015617A Active KR102688372B1 (ko) 2018-05-14 2023-02-06 발광 디바이스 및 그 제조 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020230015617A Active KR102688372B1 (ko) 2018-05-14 2023-02-06 발광 디바이스 및 그 제조 방법

Country Status (6)

Country Link
US (4) US10923641B2 (enExample)
JP (2) JP7441612B2 (enExample)
KR (2) KR102498453B1 (enExample)
CN (3) CN110491987A (enExample)
DE (1) DE102019112546B4 (enExample)
TW (2) TWI878222B (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6720333B2 (ja) 2017-06-12 2020-07-08 ユニカルタ・インコーポレイテッド 基板上に個別部品を並列に組み立てる方法
JP7072977B2 (ja) * 2018-03-05 2022-05-23 株式会社ディスコ デバイスの移設方法
US10923641B2 (en) * 2018-05-14 2021-02-16 Epistar Corporation Light-emitting device and manufacturing method thereof
KR102786764B1 (ko) * 2018-07-11 2025-03-27 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법
US11424224B2 (en) * 2019-04-24 2022-08-23 Seoul Viosys Co., Ltd. LED display panel, LED display apparatus having the same and method of fabricating the same
JP7321792B2 (ja) * 2019-06-26 2023-08-07 株式会社ジャパンディスプレイ 異方性導電膜及び表示装置
US11011669B2 (en) * 2019-10-14 2021-05-18 Shaoher Pan Integrated active-matrix light emitting pixel arrays based devices
US10847083B1 (en) 2019-10-14 2020-11-24 Shaoher Pan Integrated active-matrix light emitting pixel arrays based devices by laser-assisted bonding
US11901497B2 (en) * 2019-12-24 2024-02-13 Seoul Viosys Co., Ltd. Method of repairing light emitting device, apparatus for repairing light emitting device, and display panel having repaired light emitting device
KR20210106056A (ko) * 2020-02-19 2021-08-30 한국전자통신연구원 레이저를 이용한 전사 및 접합 방법
JP7804461B2 (ja) * 2020-03-09 2026-01-22 積水化学工業株式会社 電子部品の製造方法、及び、表示装置の製造方法
EP3907725A1 (en) * 2020-05-06 2021-11-10 Admesy B.V. Method and setup for performing a series of optical measurements with a 2d imaging system
CN111710745B (zh) * 2020-06-28 2023-03-21 重庆邮电大学 一种锰掺杂纯无机钙钛矿-Au纳米晶异质结及其制备方法和应用
WO2022021003A1 (zh) * 2020-07-27 2022-02-03 重庆康佳光电技术研究院有限公司 转接板、巨量转移方法及Micro-LED显示器
CN112967980B (zh) * 2020-08-13 2021-12-24 重庆康佳光电技术研究院有限公司 芯片转移组件及其制作方法、芯片转移方法
JP7522611B2 (ja) * 2020-08-28 2024-07-25 株式会社ジャパンディスプレイ 表示装置の製造方法
CN216793639U (zh) * 2020-09-30 2022-06-21 广东晶相光电科技有限公司 一种发光二极管及发光二极管显示器
KR102436469B1 (ko) * 2020-11-27 2022-08-26 주식회사 아큐레이저 반도체 소자의 전사 장치 및 전사 방법
KR102899002B1 (ko) * 2020-12-02 2025-12-10 엘지디스플레이 주식회사 발광 소자의 전사 방법 및 이를 이용한 표시 장치의 제조 방법
JP7788849B2 (ja) * 2021-01-28 2025-12-19 東レエンジニアリング株式会社 転写装置および転写基板
CN120595514A (zh) * 2021-07-28 2025-09-05 群创光电股份有限公司 发光装置
US12446374B2 (en) * 2022-03-21 2025-10-14 GM Global Technology Operations LLC Transparent structural composites with encapsulated micro-LEDs
JP7733602B2 (ja) * 2022-03-28 2025-09-03 東レエンジニアリング株式会社 転写装置および転写方法
CN115763351B (zh) * 2022-04-01 2025-08-26 友达光电股份有限公司 发光元件阵列基板及其制造方法
US20230317497A1 (en) * 2022-04-01 2023-10-05 AUO Corporation Display apparatus
CN119384888A (zh) * 2022-09-01 2025-01-28 三星电子株式会社 包括连接发光二极管和基板的接合构件的显示模块
CN117476532B (zh) * 2023-03-09 2025-09-02 深圳市华星光电半导体显示技术有限公司 巨量转移方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010251359A (ja) * 2009-04-10 2010-11-04 Sony Corp 素子の移載方法
JP2014515883A (ja) * 2011-04-11 2014-07-03 エヌディーエスユー リサーチ ファウンデーション レーザで促進される、分離した部品の選択的な転写
JP2018060993A (ja) 2016-09-29 2018-04-12 東レエンジニアリング株式会社 転写方法、実装方法、転写装置、及び実装装置

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4535219A (en) 1982-10-12 1985-08-13 Xerox Corporation Interfacial blister bonding for microinterconnections
JP4491948B2 (ja) * 2000-10-06 2010-06-30 ソニー株式会社 素子実装方法および画像表示装置の製造方法
WO2002084631A1 (en) 2001-04-11 2002-10-24 Sony Corporation Element transfer method, element arrangmenet method using the same, and image display apparatus production method
JP4151420B2 (ja) * 2003-01-23 2008-09-17 セイコーエプソン株式会社 デバイスの製造方法
US7244326B2 (en) * 2003-05-16 2007-07-17 Alien Technology Corporation Transfer assembly for manufacturing electronic devices
JP4667803B2 (ja) * 2004-09-14 2011-04-13 日亜化学工業株式会社 発光装置
KR20100080423A (ko) * 2008-12-30 2010-07-08 삼성엘이디 주식회사 발광소자 패키지 및 그 제조방법
JP2010251360A (ja) 2009-04-10 2010-11-04 Sony Corp 表示装置の製造方法および表示装置
JP5402804B2 (ja) * 2010-04-12 2014-01-29 デクセリアルズ株式会社 発光装置の製造方法
US8877567B2 (en) * 2010-11-18 2014-11-04 Stats Chippac, Ltd. Semiconductor device and method of forming uniform height insulating layer over interposer frame as standoff for semiconductor die
US9306117B2 (en) * 2011-07-25 2016-04-05 Industrial Technology Research Institute Transfer-bonding method for light emitting devices
TWI499031B (zh) * 2012-03-22 2015-09-01 光芯科技股份有限公司 發光裝置
JP2013211443A (ja) * 2012-03-30 2013-10-10 Toyohashi Univ Of Technology 発光装置の製造方法
KR102135352B1 (ko) * 2013-08-20 2020-07-17 엘지전자 주식회사 표시장치
WO2016175654A2 (en) 2015-04-28 2016-11-03 Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno Transfer and soldering of chips
WO2016183845A1 (en) * 2015-05-21 2016-11-24 Goertek.Inc Transferring method, manufacturing method, device and electronic apparatus of micro-led
TW202524641A (zh) 2016-01-15 2025-06-16 荷蘭商庫力克及索發荷蘭公司 放置超小或超薄之離散組件
US10312310B2 (en) * 2016-01-19 2019-06-04 Diftek Lasers, Inc. OLED display and method of fabrication thereof
WO2018056477A1 (ko) * 2016-09-22 2018-03-29 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법
TWI718343B (zh) * 2016-10-24 2021-02-11 瑞典商Glo公司 發光二極體、顯示裝置及直視顯示裝置
US20190043843A1 (en) * 2017-08-01 2019-02-07 Innolux Corporation Methods for manufacturing a display device
CN107658371B (zh) * 2017-09-15 2019-01-04 武汉大学 基于激光直写的Micro-LED的制造方法
TWI642047B (zh) * 2018-01-26 2018-11-21 Flex Tek Co., Ltd. 可撓性微發光二極體顯示模組
US10707105B1 (en) * 2018-03-29 2020-07-07 Facebook Technologies, Llc Selective shape memory alloy pick-up head
US10923641B2 (en) * 2018-05-14 2021-02-16 Epistar Corporation Light-emitting device and manufacturing method thereof
US10985046B2 (en) * 2018-06-22 2021-04-20 Veeco Instruments Inc. Micro-LED transfer methods using light-based debonding
US11107947B2 (en) * 2018-07-10 2021-08-31 Long Yang Micro light emitting diode

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010251359A (ja) * 2009-04-10 2010-11-04 Sony Corp 素子の移載方法
JP2014515883A (ja) * 2011-04-11 2014-07-03 エヌディーエスユー リサーチ ファウンデーション レーザで促進される、分離した部品の選択的な転写
JP2018060993A (ja) 2016-09-29 2018-04-12 東レエンジニアリング株式会社 転写方法、実装方法、転写装置、及び実装装置

Also Published As

Publication number Publication date
DE102019112546A1 (de) 2019-11-14
TW202508018A (zh) 2025-02-16
US20210159379A1 (en) 2021-05-27
CN116682923A (zh) 2023-09-01
US20230187597A1 (en) 2023-06-15
US11894507B2 (en) 2024-02-06
DE102019112546B4 (de) 2023-09-28
US20190348588A1 (en) 2019-11-14
TWI879686B (zh) 2025-04-01
CN116682924A (zh) 2023-09-01
JP2019201206A (ja) 2019-11-21
JP7441612B2 (ja) 2024-03-01
CN110491987A (zh) 2019-11-22
TW201947737A (zh) 2019-12-16
TWI878222B (zh) 2025-04-01
JP2023181464A (ja) 2023-12-21
US10923641B2 (en) 2021-02-16
US11621384B2 (en) 2023-04-04
US12317664B2 (en) 2025-05-27
KR20190130518A (ko) 2019-11-22
KR102688372B1 (ko) 2024-07-24
KR20230023696A (ko) 2023-02-17
US20240234660A1 (en) 2024-07-11

Similar Documents

Publication Publication Date Title
KR102498453B1 (ko) 발광 디바이스 및 그 제조 방법
TWI689105B (zh) 光電半導體戳記及其製造方法、與光電半導體裝置
JP7534325B2 (ja) 発光ダイオードディスプレイパネル及びそれを有するディスプレイ装置
EP3579663A1 (en) Display device using semiconductor light emitting element, and manufacturing method therefor
US20170345802A1 (en) Display device using semiconductor light emitting device and fabrication method thereof
CN113424315B (zh) 显示用发光元件转印方法及显示装置
US20150303355A1 (en) Semiconductor light emitting device and method for manufacturing same
KR20180104071A (ko) 표시 장치 및 그의 제조 방법, 그리고 발광 장치 및 그의 제조 방법
US9768152B2 (en) Method for producing a light emitting device
US20200111767A1 (en) Light-emitting device
KR102519201B1 (ko) 픽셀용 발광소자 및 엘이디 디스플레이 장치
US11530804B2 (en) Light-emitting device
KR102610626B1 (ko) 솔더 범프를 갖는 발광 다이오드
JP7761303B1 (ja) 両面表示ピクセルパッケージ構造及びその製造方法
US20250287736A1 (en) Led wafer, carrier substrate for led chip, manufacturing method for display device, and repair method for display device

Legal Events

Date Code Title Description
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
A302 Request for accelerated examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PA0302 Request for accelerated examination

St.27 status event code: A-1-2-D10-D17-exm-PA0302

St.27 status event code: A-1-2-D10-D16-exm-PA0302

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

A107 Divisional application of patent
PA0107 Divisional application

St.27 status event code: A-0-1-A10-A18-div-PA0107

St.27 status event code: A-0-1-A10-A16-div-PA0107

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U11-OTH-PR1001 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 4

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

R11 Change to the name of applicant or owner or transfer of ownership requested

Free format text: ST27 STATUS EVENT CODE: A-5-5-R10-R11-ASN-PN2301 (AS PROVIDED BY THE NATIONAL OFFICE)

R13 Change to the name of applicant or owner recorded

Free format text: ST27 STATUS EVENT CODE: A-5-5-R10-R13-ASN-PN2301 (AS PROVIDED BY THE NATIONAL OFFICE)