KR102464246B1 - Esc 어셈블리를 통한 균일한 rf 전력 전달을 위한 전기적으로 전도성 개스킷을 포함하는 esc 어셈블리 - Google Patents

Esc 어셈블리를 통한 균일한 rf 전력 전달을 위한 전기적으로 전도성 개스킷을 포함하는 esc 어셈블리 Download PDF

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KR102464246B1
KR102464246B1 KR1020150144902A KR20150144902A KR102464246B1 KR 102464246 B1 KR102464246 B1 KR 102464246B1 KR 1020150144902 A KR1020150144902 A KR 1020150144902A KR 20150144902 A KR20150144902 A KR 20150144902A KR 102464246 B1 KR102464246 B1 KR 102464246B1
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electrically conductive
electrode
layer
ceramic material
baseplate
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KR20160045614A (ko
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크리스토퍼 킴벌
키이스 개프
알렉산더 마튜슈킨
지강 첸
키이스 커멘댄트
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램 리써치 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
KR1020150144902A 2014-10-17 2015-10-16 Esc 어셈블리를 통한 균일한 rf 전력 전달을 위한 전기적으로 전도성 개스킷을 포함하는 esc 어셈블리 Active KR102464246B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020220144284A KR102654324B1 (ko) 2014-10-17 2022-11-02 Esc 어셈블리를 통한 균일한 rf 전력 전달을 위한 전기적으로 전도성인 개스킷을 포함하는 esc 어셈블리

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/517,095 US10002782B2 (en) 2014-10-17 2014-10-17 ESC assembly including an electrically conductive gasket for uniform RF power delivery therethrough
US14/517,095 2014-10-17

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020220144284A Division KR102654324B1 (ko) 2014-10-17 2022-11-02 Esc 어셈블리를 통한 균일한 rf 전력 전달을 위한 전기적으로 전도성인 개스킷을 포함하는 esc 어셈블리

Publications (2)

Publication Number Publication Date
KR20160045614A KR20160045614A (ko) 2016-04-27
KR102464246B1 true KR102464246B1 (ko) 2022-11-04

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KR1020150144902A Active KR102464246B1 (ko) 2014-10-17 2015-10-16 Esc 어셈블리를 통한 균일한 rf 전력 전달을 위한 전기적으로 전도성 개스킷을 포함하는 esc 어셈블리
KR1020220144284A Active KR102654324B1 (ko) 2014-10-17 2022-11-02 Esc 어셈블리를 통한 균일한 rf 전력 전달을 위한 전기적으로 전도성인 개스킷을 포함하는 esc 어셈블리
KR1020240043420A Active KR102781662B1 (ko) 2014-10-17 2024-03-29 Esc 어셈블리를 통한 균일한 rf 전력 전달을 위한 전기적으로 전도성인 개스킷을 포함하는 esc 어셈블리

Family Applications After (2)

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KR1020220144284A Active KR102654324B1 (ko) 2014-10-17 2022-11-02 Esc 어셈블리를 통한 균일한 rf 전력 전달을 위한 전기적으로 전도성인 개스킷을 포함하는 esc 어셈블리
KR1020240043420A Active KR102781662B1 (ko) 2014-10-17 2024-03-29 Esc 어셈블리를 통한 균일한 rf 전력 전달을 위한 전기적으로 전도성인 개스킷을 포함하는 esc 어셈블리

Country Status (4)

Country Link
US (2) US10002782B2 (enExample)
JP (1) JP6670576B2 (enExample)
KR (3) KR102464246B1 (enExample)
TW (1) TWI673792B (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6407694B2 (ja) * 2014-12-16 2018-10-17 株式会社日立ハイテクノロジーズ プラズマ処理装置
US10340171B2 (en) * 2016-05-18 2019-07-02 Lam Research Corporation Permanent secondary erosion containment for electrostatic chuck bonds
US10770270B2 (en) 2016-06-07 2020-09-08 Applied Materials, Inc. High power electrostatic chuck with aperture-reducing plug in a gas hole
US11127619B2 (en) 2016-06-07 2021-09-21 Applied Materials, Inc. Workpiece carrier for high power with enhanced edge sealing
US11532497B2 (en) * 2016-06-07 2022-12-20 Applied Materials, Inc. High power electrostatic chuck design with radio frequency coupling
US10636690B2 (en) 2016-07-20 2020-04-28 Applied Materials, Inc. Laminated top plate of a workpiece carrier in micromechanical and semiconductor processing
US10079168B2 (en) * 2016-11-08 2018-09-18 Lam Research Corporation Ceramic electrostatic chuck including embedded Faraday cage for RF delivery and associated methods for operation, monitoring, and control
US11848177B2 (en) * 2018-02-23 2023-12-19 Lam Research Corporation Multi-plate electrostatic chucks with ceramic baseplates
GB201815258D0 (en) 2018-09-19 2018-10-31 Spts Technologies Ltd A support
CN113439330A (zh) 2019-02-12 2021-09-24 朗姆研究公司 具有陶瓷单体的静电卡盘
CN113544837A (zh) * 2019-03-08 2021-10-22 朗姆研究公司 用于等离子体处理室的卡盘
US12300473B2 (en) * 2019-03-08 2025-05-13 Applied Materials, Inc. Electrostatic chuck for high bias radio frequency (RF) power application in a plasma processing chamber
US11488852B2 (en) * 2019-05-31 2022-11-01 Applied Materials, Inc. Methods and apparatus for reducing high voltage arcing in semiconductor process chambers
CN113496862B (zh) * 2020-04-02 2024-09-06 中微半导体设备(上海)股份有限公司 等离子体反应器及其射频功率分布调节方法
TW202329196A (zh) * 2021-09-17 2023-07-16 日商東京威力科創股份有限公司 電漿處理裝置
JP7554220B2 (ja) * 2022-03-08 2024-09-19 日本碍子株式会社 半導体製造装置用部材
CN115050627B (zh) * 2022-06-29 2025-09-16 北京北方华创微电子装备有限公司 用于半导体工艺腔室的上电极组件及该半导体工艺腔室
JP7747092B2 (ja) * 2024-02-28 2025-10-01 Toto株式会社 静電チャック
JP7747091B2 (ja) * 2024-02-28 2025-10-01 Toto株式会社 静電チャック
JP2025131341A (ja) * 2024-02-28 2025-09-09 Toto株式会社 静電チャック
JP7782599B2 (ja) * 2024-02-28 2025-12-09 Toto株式会社 静電チャック

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002231798A (ja) 2001-01-31 2002-08-16 Kyocera Corp ウエハ支持部材及びその製造方法
JP2011119654A (ja) 2009-10-26 2011-06-16 Shinko Electric Ind Co Ltd 静電チャック用基板及び静電チャック
JP2014112672A (ja) 2012-11-30 2014-06-19 Lam Research Corporation 温度制御素子アレイを備えるｅｓｃ用の電力切替システム

Family Cites Families (77)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07130826A (ja) * 1993-11-01 1995-05-19 Anelva Corp 静電チャック
US5463526A (en) 1994-01-21 1995-10-31 Lam Research Corporation Hybrid electrostatic chuck
DE19611885B4 (de) 1996-03-26 2007-04-12 Robert Bosch Gmbh Verfahren und Vorrichtung zur Steuerung eines elektromagnetischen Schaltorgans
US5858099A (en) 1996-04-09 1999-01-12 Sarnoff Corporation Electrostatic chucks and a particle deposition apparatus therefor
US5764471A (en) 1996-05-08 1998-06-09 Applied Materials, Inc. Method and apparatus for balancing an electrostatic force produced by an electrostatic chuck
US5793192A (en) 1996-06-28 1998-08-11 Lam Research Corporation Methods and apparatuses for clamping and declamping a semiconductor wafer in a wafer processing system
US6303879B1 (en) 1997-04-01 2001-10-16 Applied Materials, Inc. Laminated ceramic with multilayer electrodes and method of fabrication
US5933314A (en) 1997-06-27 1999-08-03 Lam Research Corp. Method and an apparatus for offsetting plasma bias voltage in bi-polar electro-static chucks
GB2329515B (en) * 1997-09-18 2002-03-13 Trikon Equip Ltd Platen for semiconductor workpieces
US5880924A (en) 1997-12-01 1999-03-09 Applied Materials, Inc. Electrostatic chuck capable of rapidly dechucking a substrate
US6639783B1 (en) 1998-09-08 2003-10-28 Applied Materials, Inc. Multi-layer ceramic electrostatic chuck with integrated channel
US6790375B1 (en) 1998-09-30 2004-09-14 Lam Research Corporation Dechucking method and apparatus for workpieces in vacuum processors
US7218503B2 (en) 1998-09-30 2007-05-15 Lam Research Corporation Method of determining the correct average bias compensation voltage during a plasma process
US6238160B1 (en) 1998-12-02 2001-05-29 Taiwan Semiconductor Manufacturing Company, Ltd' Method for transporting and electrostatically chucking a semiconductor wafer or the like
US6178919B1 (en) 1998-12-28 2001-01-30 Lam Research Corporation Perforated plasma confinement ring in plasma reactors
US6310755B1 (en) 1999-05-07 2001-10-30 Applied Materials, Inc. Electrostatic chuck having gas cavity and method
US6512333B2 (en) 1999-05-20 2003-01-28 Lee Chen RF-powered plasma accelerator/homogenizer
JP3805134B2 (ja) 1999-05-25 2006-08-02 東陶機器株式会社 絶縁性基板吸着用静電チャック
US6273958B2 (en) 1999-06-09 2001-08-14 Applied Materials, Inc. Substrate support for plasma processing
US6972071B1 (en) * 1999-07-13 2005-12-06 Nordson Corporation High-speed symmetrical plasma treatment system
JP4209057B2 (ja) 1999-12-01 2009-01-14 東京エレクトロン株式会社 セラミックスヒーターならびにそれを用いた基板処理装置および基板処理方法
US6377437B1 (en) 1999-12-22 2002-04-23 Lam Research Corporation High temperature electrostatic chuck
TW478026B (en) 2000-08-25 2002-03-01 Hitachi Ltd Apparatus and method for plasma processing high-speed semiconductor circuits with increased yield
JP4156788B2 (ja) 2000-10-23 2008-09-24 日本碍子株式会社 半導体製造装置用サセプター
KR20020046214A (ko) 2000-12-11 2002-06-20 어드밴스드 세라믹스 인터내셔날 코포레이션 정전척 및 그 제조방법
US6665168B2 (en) 2001-03-30 2003-12-16 Taiwan Semiconductor Manufacturing Co. Ltd Electrostatic chuck apparatus and method for efficiently dechucking a substrate therefrom
EP1391140B1 (en) 2001-04-30 2012-10-10 Lam Research Corporation Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support
TW541586B (en) * 2001-05-25 2003-07-11 Tokyo Electron Ltd Substrate table, production method therefor and plasma treating device
US6483690B1 (en) 2001-06-28 2002-11-19 Lam Research Corporation Ceramic electrostatic chuck assembly and method of making
JP4137419B2 (ja) * 2001-09-28 2008-08-20 東京エレクトロン株式会社 プラズマ処理装置
DE10156407A1 (de) 2001-11-16 2003-06-05 Bosch Gmbh Robert Haltevorrichtung, insbesondere zum Fixieren eines Halbleiterwafers in einer Plasmaätzvorrichtung, und Verfahren zur Wärmezufuhr oder Wärmeabfuhr von einem Substrat
US6760213B2 (en) 2002-03-04 2004-07-06 Hitachi High-Technologies Corporation Electrostatic chuck and method of treating substrate using electrostatic chuck
US6646233B2 (en) * 2002-03-05 2003-11-11 Hitachi High-Technologies Corporation Wafer stage for wafer processing apparatus and wafer processing method
US7013834B2 (en) * 2002-04-19 2006-03-21 Nordson Corporation Plasma treatment system
KR100511854B1 (ko) 2002-06-18 2005-09-02 아네르바 가부시키가이샤 정전 흡착 장치
US6848690B1 (en) 2002-11-19 2005-02-01 Ryan Hunter Seal for head gaskets of internal combustion engines
JP4397271B2 (ja) * 2003-05-12 2010-01-13 東京エレクトロン株式会社 処理装置
US20050042881A1 (en) * 2003-05-12 2005-02-24 Tokyo Electron Limited Processing apparatus
US7072166B2 (en) 2003-09-12 2006-07-04 Axcelis Technologies, Inc. Clamping and de-clamping semiconductor wafers on a J-R electrostatic chuck having a micromachined surface by using force delay in applying a single-phase square wave AC clamping voltage
US6905984B2 (en) * 2003-10-10 2005-06-14 Axcelis Technologies, Inc. MEMS based contact conductivity electrostatic chuck
JP4180637B2 (ja) * 2004-03-26 2008-11-12 株式会社日立国際電気 半導体製造装置および半導体装置の製造方法
US7821767B2 (en) 2004-11-04 2010-10-26 Ulvac, Inc. Electrostatic chuck device
KR100709589B1 (ko) 2005-11-14 2007-04-20 (주)소슬 웨이퍼를 용이하게 탈착시킬 수 있는 엠보싱 척
US7869184B2 (en) 2005-11-30 2011-01-11 Lam Research Corporation Method of determining a target mesa configuration of an electrostatic chuck
US7699957B2 (en) * 2006-03-03 2010-04-20 Advanced Display Process Engineering Co., Ltd. Plasma processing apparatus
JP5233093B2 (ja) * 2006-08-10 2013-07-10 東京エレクトロン株式会社 プラズマ処理装置用の載置台及びプラズマ処理装置
US8422193B2 (en) 2006-12-19 2013-04-16 Axcelis Technologies, Inc. Annulus clamping and backside gas cooled electrostatic chuck
JP5042661B2 (ja) * 2007-02-15 2012-10-03 東京エレクトロン株式会社 プラズマ処理装置及びフィルタユニット
US7892445B1 (en) 2007-09-12 2011-02-22 Lam Research Corporation Wafer electrical discharge control using argon free dechucking gas
US7940511B2 (en) 2007-09-21 2011-05-10 Asml Netherlands B.V. Electrostatic clamp, lithographic apparatus and method of manufacturing an electrostatic clamp
JP4974873B2 (ja) 2007-12-26 2012-07-11 新光電気工業株式会社 静電チャック及び基板温調固定装置
US7884925B2 (en) * 2008-05-23 2011-02-08 Lam Research Corporation Electrical and optical system and methods for monitoring erosion of electrostatic chuck edge bead materials
WO2010019430A2 (en) 2008-08-12 2010-02-18 Applied Materials, Inc. Electrostatic chuck assembly
US8270142B2 (en) 2008-12-10 2012-09-18 Axcelis Technologies, Inc. De-clamping wafers from an electrostatic chuck
US8060330B2 (en) 2008-12-12 2011-11-15 Lam Research Corporation Method and system for centering wafer on chuck
US8139340B2 (en) 2009-01-20 2012-03-20 Plasma-Therm Llc Conductive seal ring electrostatic chuck
JP5604888B2 (ja) * 2009-12-21 2014-10-15 住友大阪セメント株式会社 静電チャックの製造方法
US8559159B2 (en) 2010-08-06 2013-10-15 Applied Materials, Inc. Electrostatic chuck and methods of use thereof
US8546732B2 (en) 2010-11-10 2013-10-01 Lam Research Corporation Heating plate with planar heater zones for semiconductor processing
US8520360B2 (en) 2011-07-19 2013-08-27 Lam Research Corporation Electrostatic chuck with wafer backside plasma assisted dechuck
JP6223983B2 (ja) 2011-09-30 2017-11-01 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 温度制御付き静電チャック
CN103843128B (zh) 2011-09-30 2017-11-21 应用材料公司 静电夹具
CN103065997B (zh) 2011-10-19 2015-08-05 中芯国际集成电路制造(上海)有限公司 晶圆承载设备及晶圆承载的方法
US9869392B2 (en) 2011-10-20 2018-01-16 Lam Research Corporation Edge seal for lower electrode assembly
US10586686B2 (en) 2011-11-22 2020-03-10 Law Research Corporation Peripheral RF feed and symmetric RF return for symmetric RF delivery
US10069443B2 (en) 2011-12-20 2018-09-04 Tokyo Electron Limited Dechuck control method and plasma processing apparatus
US8937800B2 (en) * 2012-04-24 2015-01-20 Applied Materials, Inc. Electrostatic chuck with advanced RF and temperature uniformity
JP6006972B2 (ja) 2012-04-26 2016-10-12 新光電気工業株式会社 静電チャック
US9281226B2 (en) 2012-04-26 2016-03-08 Applied Materials, Inc. Electrostatic chuck having reduced power loss
JP5989593B2 (ja) * 2012-04-27 2016-09-07 日本碍子株式会社 半導体製造装置用部材
JP5823915B2 (ja) 2012-05-29 2015-11-25 新光電気工業株式会社 静電チャックの製造方法
JP5441019B1 (ja) 2012-08-29 2014-03-12 Ｔｏｔｏ株式会社 静電チャック
JP5996340B2 (ja) * 2012-09-07 2016-09-21 東京エレクトロン株式会社 プラズマエッチング装置
JP5441021B1 (ja) 2012-09-12 2014-03-12 Ｔｏｔｏ株式会社 静電チャック
US20140116622A1 (en) 2012-10-31 2014-05-01 Semes Co. Ltd. Electrostatic chuck and substrate processing apparatus
US9685356B2 (en) * 2012-12-11 2017-06-20 Applied Materials, Inc. Substrate support assembly having metal bonded protective layer
JP2014138164A (ja) 2013-01-18 2014-07-28 Sumitomo Osaka Cement Co Ltd 静電チャック装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002231798A (ja) 2001-01-31 2002-08-16 Kyocera Corp ウエハ支持部材及びその製造方法
JP2011119654A (ja) 2009-10-26 2011-06-16 Shinko Electric Ind Co Ltd 静電チャック用基板及び静電チャック
JP2014112672A (ja) 2012-11-30 2014-06-19 Lam Research Corporation 温度制御素子アレイを備えるｅｓｃ用の電力切替システム

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KR20160045614A (ko) 2016-04-27
JP6670576B2 (ja) 2020-03-25
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US10002782B2 (en) 2018-06-19
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