KR102450009B1 - 오버레이 및 에지 배치 에러들의 계측 및 제어 - Google Patents

오버레이 및 에지 배치 에러들의 계측 및 제어 Download PDF

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KR102450009B1
KR102450009B1 KR1020207028542A KR20207028542A KR102450009B1 KR 102450009 B1 KR102450009 B1 KR 102450009B1 KR 1020207028542 A KR1020207028542 A KR 1020207028542A KR 20207028542 A KR20207028542 A KR 20207028542A KR 102450009 B1 KR102450009 B1 KR 102450009B1
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South Korea
Prior art keywords
overlay
target
features
optical
metrology
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KR20200118906A (ko
Inventor
안드레이 브이. 쉬체그로브
프랭크 라스케
나다브 구트만
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케이엘에이 코포레이션
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Inspection Of Paper Currency And Valuable Securities (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Paper (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
KR1020207028542A 2018-03-05 2019-03-04 오버레이 및 에지 배치 에러들의 계측 및 제어 Active KR102450009B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201862638900P 2018-03-05 2018-03-05
US62/638,900 2018-03-05
US16/057,498 2018-08-07
US16/057,498 US10533848B2 (en) 2018-03-05 2018-08-07 Metrology and control of overlay and edge placement errors
PCT/US2019/020471 WO2019173171A1 (en) 2018-03-05 2019-03-04 Metrology and control of overlay and edge placement errors

Publications (2)

Publication Number Publication Date
KR20200118906A KR20200118906A (ko) 2020-10-16
KR102450009B1 true KR102450009B1 (ko) 2022-09-30

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KR1020207028542A Active KR102450009B1 (ko) 2018-03-05 2019-03-04 오버레이 및 에지 배치 에러들의 계측 및 제어

Country Status (9)

Country Link
US (1) US10533848B2 (https=)
EP (1) EP3762780B1 (https=)
JP (1) JP7177846B2 (https=)
KR (1) KR102450009B1 (https=)
CN (1) CN111801625B (https=)
IL (1) IL276811B2 (https=)
SG (1) SG11202008005WA (https=)
TW (1) TWI781298B (https=)
WO (1) WO2019173171A1 (https=)

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US11353321B2 (en) 2020-06-12 2022-06-07 Kla Corporation Metrology system and method for measuring diagonal diffraction-based overlay targets
US20230333485A1 (en) * 2020-09-28 2023-10-19 Asml Netherlands B.V. Target structure and associated methods and apparatus
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US11728192B2 (en) * 2021-07-22 2023-08-15 Globalfoundries U.S. Inc. Refining defect detection using process window
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KR102755839B1 (ko) * 2021-10-21 2025-01-15 케이엘에이 코포레이션 개선된 오버레이 오차 계측을 위한 유도 변위
CN117957497A (zh) 2022-01-13 2024-04-30 科磊股份有限公司 使用小目标的叠加误差的校准测量
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US20240093985A1 (en) * 2022-09-16 2024-03-21 Kla Corporation System and method for acquiring alignment measurements of structures of a bonded sample
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Also Published As

Publication number Publication date
IL276811B2 (en) 2023-06-01
TW201945857A (zh) 2019-12-01
CN111801625B (zh) 2021-10-08
SG11202008005WA (en) 2020-09-29
KR20200118906A (ko) 2020-10-16
EP3762780B1 (en) 2023-11-29
JP7177846B2 (ja) 2022-11-24
JP2021516366A (ja) 2021-07-01
TWI781298B (zh) 2022-10-21
EP3762780A1 (en) 2021-01-13
CN111801625A (zh) 2020-10-20
IL276811A (en) 2020-10-29
EP3762780A4 (en) 2021-12-15
WO2019173171A1 (en) 2019-09-12
US10533848B2 (en) 2020-01-14
US20190271542A1 (en) 2019-09-05

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