JP7177846B2 - オーバレイ及びエッジ配置誤差の計量及び制御 - Google Patents

オーバレイ及びエッジ配置誤差の計量及び制御 Download PDF

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JP7177846B2
JP7177846B2 JP2020546104A JP2020546104A JP7177846B2 JP 7177846 B2 JP7177846 B2 JP 7177846B2 JP 2020546104 A JP2020546104 A JP 2020546104A JP 2020546104 A JP2020546104 A JP 2020546104A JP 7177846 B2 JP7177846 B2 JP 7177846B2
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Prior art keywords
overlay
metrology
optical
target
tool
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JP2021516366A (ja
JP2021516366A5 (https=
JPWO2019173171A5 (https=
Inventor
アンドレイ ブイ シチェグロフ
フランク ラスケ
ナダフ グトマン
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KLA Corp
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KLA Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Inspection Of Paper Currency And Valuable Securities (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Paper (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
JP2020546104A 2018-03-05 2019-03-04 オーバレイ及びエッジ配置誤差の計量及び制御 Active JP7177846B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201862638900P 2018-03-05 2018-03-05
US62/638,900 2018-03-05
US16/057,498 2018-08-07
US16/057,498 US10533848B2 (en) 2018-03-05 2018-08-07 Metrology and control of overlay and edge placement errors
PCT/US2019/020471 WO2019173171A1 (en) 2018-03-05 2019-03-04 Metrology and control of overlay and edge placement errors

Publications (4)

Publication Number Publication Date
JP2021516366A JP2021516366A (ja) 2021-07-01
JP2021516366A5 JP2021516366A5 (https=) 2022-03-10
JPWO2019173171A5 JPWO2019173171A5 (https=) 2022-03-10
JP7177846B2 true JP7177846B2 (ja) 2022-11-24

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JP2020546104A Active JP7177846B2 (ja) 2018-03-05 2019-03-04 オーバレイ及びエッジ配置誤差の計量及び制御

Country Status (9)

Country Link
US (1) US10533848B2 (https=)
EP (1) EP3762780B1 (https=)
JP (1) JP7177846B2 (https=)
KR (1) KR102450009B1 (https=)
CN (1) CN111801625B (https=)
IL (1) IL276811B2 (https=)
SG (1) SG11202008005WA (https=)
TW (1) TWI781298B (https=)
WO (1) WO2019173171A1 (https=)

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US11054753B1 (en) * 2020-04-20 2021-07-06 Applied Materials Israel Ltd. Overlay monitoring
US11353321B2 (en) 2020-06-12 2022-06-07 Kla Corporation Metrology system and method for measuring diagonal diffraction-based overlay targets
US20230333485A1 (en) * 2020-09-28 2023-10-19 Asml Netherlands B.V. Target structure and associated methods and apparatus
US11829077B2 (en) 2020-12-11 2023-11-28 Kla Corporation System and method for determining post bonding overlay
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US11604420B2 (en) * 2021-05-03 2023-03-14 Kla Corporation Self-calibrating overlay metrology
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US11703767B2 (en) * 2021-06-28 2023-07-18 Kla Corporation Overlay mark design for electron beam overlay
US11728192B2 (en) * 2021-07-22 2023-08-15 Globalfoundries U.S. Inc. Refining defect detection using process window
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KR102755839B1 (ko) * 2021-10-21 2025-01-15 케이엘에이 코포레이션 개선된 오버레이 오차 계측을 위한 유도 변위
CN117957497A (zh) 2022-01-13 2024-04-30 科磊股份有限公司 使用小目标的叠加误差的校准测量
US20230314336A1 (en) 2022-03-31 2023-10-05 Kla Corporation Multi-mode optical inspection
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US20240093985A1 (en) * 2022-09-16 2024-03-21 Kla Corporation System and method for acquiring alignment measurements of structures of a bonded sample
US12067745B2 (en) * 2022-09-27 2024-08-20 Kla Corporation Image pre-processing for overlay metrology using decomposition techniques
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Also Published As

Publication number Publication date
IL276811B2 (en) 2023-06-01
TW201945857A (zh) 2019-12-01
CN111801625B (zh) 2021-10-08
SG11202008005WA (en) 2020-09-29
KR20200118906A (ko) 2020-10-16
EP3762780B1 (en) 2023-11-29
JP2021516366A (ja) 2021-07-01
TWI781298B (zh) 2022-10-21
EP3762780A1 (en) 2021-01-13
CN111801625A (zh) 2020-10-20
IL276811A (en) 2020-10-29
EP3762780A4 (en) 2021-12-15
KR102450009B1 (ko) 2022-09-30
WO2019173171A1 (en) 2019-09-12
US10533848B2 (en) 2020-01-14
US20190271542A1 (en) 2019-09-05

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