SG11202008005WA - Metrology and control of overlay and edge placement errors - Google Patents

Metrology and control of overlay and edge placement errors

Info

Publication number
SG11202008005WA
SG11202008005WA SG11202008005WA SG11202008005WA SG11202008005WA SG 11202008005W A SG11202008005W A SG 11202008005WA SG 11202008005W A SG11202008005W A SG 11202008005WA SG 11202008005W A SG11202008005W A SG 11202008005WA SG 11202008005W A SG11202008005W A SG 11202008005WA
Authority
SG
Singapore
Prior art keywords
metrology
overlay
control
edge placement
placement errors
Prior art date
Application number
SG11202008005WA
Other languages
English (en)
Inventor
Andrei V Shchegrov
Frank Laske
Nadav Gutman
Original Assignee
Kla Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kla Tencor Corp filed Critical Kla Tencor Corp
Publication of SG11202008005WA publication Critical patent/SG11202008005WA/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Inspection Of Paper Currency And Valuable Securities (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Paper (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
SG11202008005WA 2018-03-05 2019-03-04 Metrology and control of overlay and edge placement errors SG11202008005WA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862638900P 2018-03-05 2018-03-05
US16/057,498 US10533848B2 (en) 2018-03-05 2018-08-07 Metrology and control of overlay and edge placement errors
PCT/US2019/020471 WO2019173171A1 (en) 2018-03-05 2019-03-04 Metrology and control of overlay and edge placement errors

Publications (1)

Publication Number Publication Date
SG11202008005WA true SG11202008005WA (en) 2020-09-29

Family

ID=67768073

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202008005WA SG11202008005WA (en) 2018-03-05 2019-03-04 Metrology and control of overlay and edge placement errors

Country Status (9)

Country Link
US (1) US10533848B2 (https=)
EP (1) EP3762780B1 (https=)
JP (1) JP7177846B2 (https=)
KR (1) KR102450009B1 (https=)
CN (1) CN111801625B (https=)
IL (1) IL276811B2 (https=)
SG (1) SG11202008005WA (https=)
TW (1) TWI781298B (https=)
WO (1) WO2019173171A1 (https=)

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US11809090B2 (en) * 2020-01-30 2023-11-07 Kla Corporation Composite overlay metrology target
US11054753B1 (en) * 2020-04-20 2021-07-06 Applied Materials Israel Ltd. Overlay monitoring
US11353321B2 (en) 2020-06-12 2022-06-07 Kla Corporation Metrology system and method for measuring diagonal diffraction-based overlay targets
US20230333485A1 (en) * 2020-09-28 2023-10-19 Asml Netherlands B.V. Target structure and associated methods and apparatus
US11829077B2 (en) 2020-12-11 2023-11-28 Kla Corporation System and method for determining post bonding overlay
US11428642B2 (en) * 2021-01-04 2022-08-30 Kla Corporation Scanning scatterometry overlay measurement
US11967535B2 (en) * 2021-04-13 2024-04-23 Kla Corporation On-product overlay targets
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US20220357674A1 (en) * 2021-05-04 2022-11-10 Kla Corporation Oblique illumination for overlay metrology
TWI795798B (zh) * 2021-06-02 2023-03-11 東龍投資股份有限公司 對準誤差補償方法及其系統
US11862524B2 (en) 2021-06-28 2024-01-02 Kla Corporation Overlay mark design for electron beam overlay
US11703767B2 (en) * 2021-06-28 2023-07-18 Kla Corporation Overlay mark design for electron beam overlay
US11728192B2 (en) * 2021-07-22 2023-08-15 Globalfoundries U.S. Inc. Refining defect detection using process window
US11782411B2 (en) 2021-07-28 2023-10-10 Kla Corporation System and method for mitigating overlay distortion patterns caused by a wafer bonding tool
KR102755839B1 (ko) * 2021-10-21 2025-01-15 케이엘에이 코포레이션 개선된 오버레이 오차 계측을 위한 유도 변위
CN117957497A (zh) 2022-01-13 2024-04-30 科磊股份有限公司 使用小目标的叠加误差的校准测量
US20230314336A1 (en) 2022-03-31 2023-10-05 Kla Corporation Multi-mode optical inspection
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WO2024052061A1 (en) * 2022-09-08 2024-03-14 Asml Netherlands B.V. Measuring contrast and critical dimension using an alignment sensor
US20240093985A1 (en) * 2022-09-16 2024-03-21 Kla Corporation System and method for acquiring alignment measurements of structures of a bonded sample
US12067745B2 (en) * 2022-09-27 2024-08-20 Kla Corporation Image pre-processing for overlay metrology using decomposition techniques
US12092966B2 (en) * 2022-11-23 2024-09-17 Kla Corporation Device feature specific edge placement error (EPE)
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US20250385066A1 (en) * 2024-06-14 2025-12-18 Kla Corporation High-voltage column with permanent magnet lens and positive wafer bias for overlay

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Also Published As

Publication number Publication date
IL276811B2 (en) 2023-06-01
TW201945857A (zh) 2019-12-01
CN111801625B (zh) 2021-10-08
KR20200118906A (ko) 2020-10-16
EP3762780B1 (en) 2023-11-29
JP7177846B2 (ja) 2022-11-24
JP2021516366A (ja) 2021-07-01
TWI781298B (zh) 2022-10-21
EP3762780A1 (en) 2021-01-13
CN111801625A (zh) 2020-10-20
IL276811A (en) 2020-10-29
EP3762780A4 (en) 2021-12-15
KR102450009B1 (ko) 2022-09-30
WO2019173171A1 (en) 2019-09-12
US10533848B2 (en) 2020-01-14
US20190271542A1 (en) 2019-09-05

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