KR102424805B1 - 핫 스폿 및 프로세스 창 모니터링 - Google Patents

핫 스폿 및 프로세스 창 모니터링 Download PDF

Info

Publication number
KR102424805B1
KR102424805B1 KR1020187023048A KR20187023048A KR102424805B1 KR 102424805 B1 KR102424805 B1 KR 102424805B1 KR 1020187023048 A KR1020187023048 A KR 1020187023048A KR 20187023048 A KR20187023048 A KR 20187023048A KR 102424805 B1 KR102424805 B1 KR 102424805B1
Authority
KR
South Korea
Prior art keywords
elements
sub
along
asymmetric
metrology
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020187023048A
Other languages
English (en)
Korean (ko)
Other versions
KR20180095717A (ko
Inventor
보리스 골로바네프스키
Original Assignee
케이엘에이 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 케이엘에이 코포레이션 filed Critical 케이엘에이 코포레이션
Publication of KR20180095717A publication Critical patent/KR20180095717A/ko
Application granted granted Critical
Publication of KR102424805B1 publication Critical patent/KR102424805B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70325—Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lenses or solid immersion lenses
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706845—Calibration, e.g. tool-to-tool calibration, beam alignment, spot position or focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Evolutionary Computation (AREA)
  • General Engineering & Computer Science (AREA)
  • Geometry (AREA)
  • Multimedia (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Image Analysis (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
KR1020187023048A 2016-01-11 2017-01-06 핫 스폿 및 프로세스 창 모니터링 Active KR102424805B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662277274P 2016-01-11 2016-01-11
US62/277,274 2016-01-11
PCT/US2017/012490 WO2017123464A1 (en) 2016-01-11 2017-01-06 Hot spot and process window monitoring

Publications (2)

Publication Number Publication Date
KR20180095717A KR20180095717A (ko) 2018-08-27
KR102424805B1 true KR102424805B1 (ko) 2022-07-22

Family

ID=59312167

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020187023048A Active KR102424805B1 (ko) 2016-01-11 2017-01-06 핫 스폿 및 프로세스 창 모니터링

Country Status (8)

Country Link
US (2) US10354035B2 (enExample)
EP (1) EP3403142B1 (enExample)
JP (2) JP7117242B2 (enExample)
KR (1) KR102424805B1 (enExample)
CN (2) CN112925177B (enExample)
IL (2) IL259823B (enExample)
TW (1) TWI730031B (enExample)
WO (1) WO2017123464A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10628544B2 (en) 2017-09-25 2020-04-21 International Business Machines Corporation Optimizing integrated circuit designs based on interactions between multiple integration design rules
CN109581817B (zh) * 2017-09-29 2021-07-06 联华电子股份有限公司 半导体装置的形成方法
KR102154959B1 (ko) 2020-04-29 2020-09-10 동아에스티 주식회사 지속형 glp-1 및 글루카곤 수용체 이중작용제
US11862524B2 (en) 2021-06-28 2024-01-02 Kla Corporation Overlay mark design for electron beam overlay
US11703767B2 (en) * 2021-06-28 2023-07-18 Kla Corporation Overlay mark design for electron beam overlay
KR102871169B1 (ko) * 2021-12-17 2025-10-14 케이엘에이 코포레이션 개선된 타겟 배치 정확성을 위한 오버레이 타겟 설계
US20240053673A1 (en) * 2022-08-11 2024-02-15 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method of signal enhancement for alignment patterns
CN116341139B (zh) * 2023-03-23 2025-10-17 浙江大学 一种提高非对称柱塞泵极限转速的过渡区偏置设计方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015090839A1 (en) * 2013-12-17 2015-06-25 Asml Netherlands B.V. Inspection method, lithographic apparatus, mask and substrate

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6128089A (en) * 1998-07-28 2000-10-03 International Business Machines Corporation Combined segmented and nonsegmented bar-in-bar targets
US7068833B1 (en) * 2000-08-30 2006-06-27 Kla-Tencor Corporation Overlay marks, methods of overlay mark design and methods of overlay measurements
JP5180419B2 (ja) 2000-08-30 2013-04-10 ケーエルエー−テンカー・コーポレーション 重ね合わせマーク、重ね合わせマークの設計方法および重ね合わせ測定の方法
US20030002043A1 (en) 2001-04-10 2003-01-02 Kla-Tencor Corporation Periodic patterns and technique to control misalignment
US6884552B2 (en) * 2001-11-09 2005-04-26 Kla-Tencor Technologies Corporation Focus masking structures, focus patterns and measurements thereof
US6772084B2 (en) * 2002-01-31 2004-08-03 Timbre Technologies, Inc. Overlay measurements using periodic gratings
US7804994B2 (en) 2002-02-15 2010-09-28 Kla-Tencor Technologies Corporation Overlay metrology and control method
TW200507228A (en) * 2003-04-08 2005-02-16 Aoti Operating Co Inc Overlay metrology mark
US7112890B2 (en) 2003-10-30 2006-09-26 Asml Holding N.V. Tunable alignment geometry
JP2006039148A (ja) * 2004-07-26 2006-02-09 Toshiba Corp ホトマスク、それを用いたフォーカス測定方法および半導体装置の製造方法
US7655388B2 (en) * 2005-01-03 2010-02-02 Chartered Semiconductor Manufacturing, Ltd. Mask and method to pattern chromeless phase lithography contact hole
US7557921B1 (en) * 2005-01-14 2009-07-07 Kla-Tencor Technologies Corporation Apparatus and methods for optically monitoring the fidelity of patterns produced by photolitographic tools
DE102005046973B4 (de) * 2005-09-30 2014-01-30 Globalfoundries Inc. Struktur und Verfahren zum gleichzeitigen Bestimmen einer Überlagerungsgenauigkeit und eines Musteranordnungsfehlers
US20070111109A1 (en) * 2005-11-14 2007-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photolithography scattering bar structure and method
NL1036856A1 (nl) 2008-04-24 2009-10-27 Asml Netherlands Bv Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method.
EP2392970A3 (en) 2010-02-19 2017-08-23 ASML Netherlands BV Method and apparatus for controlling a lithographic apparatus
US20120154773A1 (en) 2010-12-17 2012-06-21 Carl Zeiss Sms Gmbh Method and apparatus for correcting errors on a wafer processed by a photolithographic mask
NL2010905A (en) * 2012-06-22 2013-12-24 Asml Netherlands Bv Method of determining focus, inspection apparatus, patterning device, substrate and device manufacturing method.
JP6478974B2 (ja) * 2013-04-10 2019-03-06 ケーエルエー−テンカー コーポレイション 標的設計及び製造における誘導自己組織化
US20150043391A1 (en) 2013-08-08 2015-02-12 Sharp Laboratories Of America, Inc. Systems and methods for reconfiguration signaling
WO2015196168A1 (en) * 2014-06-21 2015-12-23 Kla-Tencor Corporation Compound imaging metrology targets
WO2016187062A1 (en) * 2015-05-15 2016-11-24 Kla-Tencor Corporation System and method for focus determination using focus-sensitive overlay targets

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015090839A1 (en) * 2013-12-17 2015-06-25 Asml Netherlands B.V. Inspection method, lithographic apparatus, mask and substrate

Also Published As

Publication number Publication date
IL285530B (en) 2022-06-01
TWI730031B (zh) 2021-06-11
JP2019502959A (ja) 2019-01-31
EP3403142B1 (en) 2022-11-09
CN112925177A (zh) 2021-06-08
IL259823A (en) 2018-07-31
US10354035B2 (en) 2019-07-16
CN108475026B (zh) 2021-04-23
JP7117242B2 (ja) 2022-08-12
CN108475026A (zh) 2018-08-31
EP3403142A1 (en) 2018-11-21
US20180232478A1 (en) 2018-08-16
KR20180095717A (ko) 2018-08-27
TW201732660A (zh) 2017-09-16
WO2017123464A1 (en) 2017-07-20
US10755016B2 (en) 2020-08-25
JP2022153592A (ja) 2022-10-12
IL259823B (en) 2021-09-30
US20190286781A1 (en) 2019-09-19
IL285530A (en) 2021-09-30
EP3403142A4 (en) 2019-09-04
CN112925177B (zh) 2022-09-06
JP7477564B2 (ja) 2024-05-01

Similar Documents

Publication Publication Date Title
KR102424805B1 (ko) 핫 스폿 및 프로세스 창 모니터링
US9910348B2 (en) Method of simultaneous lithography and etch correction flow
KR102408316B1 (ko) 경사진 주기적 구조물을 갖는 계측 타겟 및 방법
KR102094652B1 (ko) 계측 타겟의 식별, 디자인 및 검증
CN106200273B (zh) 检测光刻热点的方法
US20100129740A1 (en) Method for Collecting Optical Proximity Correction Parameter
JP7378530B2 (ja) 計量ターゲットデザイン及び方法
JP2025137718A (ja) 集積回路設計レイアウトをコンパクションするための方法
US8930856B2 (en) Mask rule checking based on curvature
Civay et al. EUV telecentricity and shadowing errors impact on process margins
CN120161666A (zh) 用于极紫外光刻的掩模拼接
CN116184773A (zh) Sraf的风险预测及优化方法
Badger et al. Your worst nightmare: inspection of aggressive OPC on 14nm masks with emphasis on defect sensitivity and wafer defect print predictability
US10748821B2 (en) Method and system for measuring pattern placement error on a wafer
Agarwal et al. Integrated model-based retargeting and optical proximity correction
Brist et al. Reticle process effects on OPC models
Sarma et al. 3D physical modeling for patterning process development
Melvin III et al. Assist feature placement analysis using focus sensitivity models
Jessen et al. 32nm design rule evaluation through virtual patterning
Sturtevant et al. Towards the prediction of pattern collapse hotspots for full-chip layouts
Choi et al. Control of CD errors and Hotspots by using a design based verification system
JP2007108716A (ja) ルールモデルベース・ハイブリッド光学近接効果補正に対するルールを発生するためのモデルベースパターンの特徴化
Chiang et al. Systematic Yield-Lithography
Dave et al. New methodology to predict pattern collapse for 14nm and beyond
Lee et al. LRC techniques for improved error detection throughout the process window

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20180809

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20220105

Comment text: Request for Examination of Application

PA0302 Request for accelerated examination

Patent event date: 20220105

Patent event code: PA03022R01D

Comment text: Request for Accelerated Examination

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20220322

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20220526

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20220720

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20220720

End annual number: 3

Start annual number: 1

PG1601 Publication of registration