JP2022153592A - ホットスポット及びプロセスウィンドウ監視装置 - Google Patents
ホットスポット及びプロセスウィンドウ監視装置 Download PDFInfo
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- G06F30/30—Circuit design
- G06F30/39—Circuit design at the physical level
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
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- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
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- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
- Evolutionary Computation (AREA)
- General Engineering & Computer Science (AREA)
- Geometry (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Image Analysis (AREA)
Abstract
Description
本願は、2016年1月11日付米国暫定特許出願第62/277,274号の利益を主張する出願であるので、この参照を以てその全容を本願に繰り入れることにする。
Claims (10)
- プロセッサとコンピュータ可読記憶媒体とを含むオーバーレイツールを備える装置であって、
上記プロセッサが、計量ターゲットから計量信号を得るように構成され、
上記計量ターゲットが、ウェーハと、上記ウェーハ上に設けられた少なくとも2個の周期的構造と、を備え、
上記周期的構造のうち少なくとも1個が、その周期的構造に対応するセグメント化方向に沿い反復する非対称的な要素を含み、
上記反復する非対称的な要素が、上記セグメント化方向に対し垂直な方向に沿い内部周期性を呈し、
上記反復する非対称的な要素が、上記垂直な方向に沿い反復するサブ要素を有し、それらサブ要素が上記セグメント化方向に沿い非対称的であり、
上記サブ要素が、少なくとも1回途切れるラインを有し、
上記サブ要素の少なくとも一部が、上記垂直な方向に沿った、該サブ要素に接続された縦ラインを有する、装置。 - 請求項1に記載の装置において、上記サブ要素が少なくとも2本の平行ラインセグメントを含む、装置。
- 請求項2に記載の装置において、上記平行ラインセグメントのうち少なくとも幾本かが相互接続されている、装置。
- 請求項1に記載の装置において、上記ライン又はラインセグメントのうち少なくとも幾本かが、上記縦ラインのうち少なくとも幾本かに相互接続されている、装置。
- 請求項1に記載の装置において、上記サブ要素のうち少なくとも幾つかが、上記垂直な方向に沿い相互接続されている、装置。
- 請求項1に記載の装置において、上記サブ要素のうち少なくとも幾つかが、上記垂直な方向に沿い互いに間隔配置されている、装置。
- 請求項1に記載の装置において、上記非対称的な要素が、上記セグメント化方向に対し垂直であり非対称配置されている少なくとも1本のラインを有する、装置。
- 請求項1に記載の装置において、上記サブ要素のうち少なくとも1つが少なくとも6辺を有する多角形である、装置。
- 請求項1に記載の装置において、上記オーバーレイツールがさらに、前記計量信号からホットスポットを監視するように構成されている、装置。
- 請求項1に記載の装置において、上記オーバーレイツールがさらに、前記計量信号からプロセスウィンドウを監視するように構成されている、装置。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662277274P | 2016-01-11 | 2016-01-11 | |
US62/277,274 | 2016-01-11 | ||
PCT/US2017/012490 WO2017123464A1 (en) | 2016-01-11 | 2017-01-06 | Hot spot and process window monitoring |
JP2018536101A JP7117242B2 (ja) | 2016-01-11 | 2017-01-06 | ホットスポット及び処理窓監視 |
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JP2018536101A Division JP7117242B2 (ja) | 2016-01-11 | 2017-01-06 | ホットスポット及び処理窓監視 |
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JP2022153592A true JP2022153592A (ja) | 2022-10-12 |
JP7477564B2 JP7477564B2 (ja) | 2024-05-01 |
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JP2018536101A Active JP7117242B2 (ja) | 2016-01-11 | 2017-01-06 | ホットスポット及び処理窓監視 |
JP2022122800A Active JP7477564B2 (ja) | 2016-01-11 | 2022-08-01 | ホットスポット及びプロセスウィンドウ監視装置 |
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US (2) | US10354035B2 (ja) |
EP (1) | EP3403142B1 (ja) |
JP (2) | JP7117242B2 (ja) |
KR (1) | KR102424805B1 (ja) |
CN (2) | CN108475026B (ja) |
IL (2) | IL259823B (ja) |
TW (1) | TWI730031B (ja) |
WO (1) | WO2017123464A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10628544B2 (en) * | 2017-09-25 | 2020-04-21 | International Business Machines Corporation | Optimizing integrated circuit designs based on interactions between multiple integration design rules |
CN109581817B (zh) * | 2017-09-29 | 2021-07-06 | 联华电子股份有限公司 | 半导体装置的形成方法 |
KR102154959B1 (ko) | 2020-04-29 | 2020-09-10 | 동아에스티 주식회사 | 지속형 glp-1 및 글루카곤 수용체 이중작용제 |
US11703767B2 (en) * | 2021-06-28 | 2023-07-18 | Kla Corporation | Overlay mark design for electron beam overlay |
US11862524B2 (en) | 2021-06-28 | 2024-01-02 | Kla Corporation | Overlay mark design for electron beam overlay |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008227528A (ja) * | 2003-10-30 | 2008-09-25 | Asml Holding Nv | 調整可能なアライメントジオメトリ |
US7557921B1 (en) * | 2005-01-14 | 2009-07-07 | Kla-Tencor Technologies Corporation | Apparatus and methods for optically monitoring the fidelity of patterns produced by photolitographic tools |
JP2011171732A (ja) * | 2010-02-19 | 2011-09-01 | Asml Netherlands Bv | リソグラフィ装置を制御するための方法および装置 |
JP2012080131A (ja) * | 2000-08-30 | 2012-04-19 | Kla-Tencor Corp | 重ね合わせマーク、重ね合わせマークの設計方法および重ね合わせ測定の方法 |
JP2014504376A (ja) * | 2010-12-17 | 2014-02-20 | カール ツァイス エスエムエス ゲーエムベーハー | フォトリソグラフィマスクによって処理されるウェーハ上の誤差を補正する方法及び装置 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6128089A (en) * | 1998-07-28 | 2000-10-03 | International Business Machines Corporation | Combined segmented and nonsegmented bar-in-bar targets |
US7068833B1 (en) * | 2000-08-30 | 2006-06-27 | Kla-Tencor Corporation | Overlay marks, methods of overlay mark design and methods of overlay measurements |
US20030002043A1 (en) * | 2001-04-10 | 2003-01-02 | Kla-Tencor Corporation | Periodic patterns and technique to control misalignment |
US6884552B2 (en) * | 2001-11-09 | 2005-04-26 | Kla-Tencor Technologies Corporation | Focus masking structures, focus patterns and measurements thereof |
US6772084B2 (en) * | 2002-01-31 | 2004-08-03 | Timbre Technologies, Inc. | Overlay measurements using periodic gratings |
US7804994B2 (en) * | 2002-02-15 | 2010-09-28 | Kla-Tencor Technologies Corporation | Overlay metrology and control method |
WO2004090979A2 (en) * | 2003-04-08 | 2004-10-21 | Aoti Operating Company, Inc | Overlay metrology mark |
JP2006039148A (ja) * | 2004-07-26 | 2006-02-09 | Toshiba Corp | ホトマスク、それを用いたフォーカス測定方法および半導体装置の製造方法 |
US7655388B2 (en) | 2005-01-03 | 2010-02-02 | Chartered Semiconductor Manufacturing, Ltd. | Mask and method to pattern chromeless phase lithography contact hole |
DE102005046973B4 (de) * | 2005-09-30 | 2014-01-30 | Globalfoundries Inc. | Struktur und Verfahren zum gleichzeitigen Bestimmen einer Überlagerungsgenauigkeit und eines Musteranordnungsfehlers |
US20070111109A1 (en) | 2005-11-14 | 2007-05-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photolithography scattering bar structure and method |
NL1036856A1 (nl) | 2008-04-24 | 2009-10-27 | Asml Netherlands Bv | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method. |
KR101983615B1 (ko) * | 2012-06-22 | 2019-05-29 | 에이에스엠엘 네델란즈 비.브이. | 포커스를 결정하는 방법, 검사 장치, 패터닝 장치, 기판, 및 디바이스 제조 방법 |
KR102231731B1 (ko) * | 2013-04-10 | 2021-03-24 | 케이엘에이 코포레이션 | 타겟 설계 및 생산 시의 직접 자기 조립 |
US20150043391A1 (en) | 2013-08-08 | 2015-02-12 | Sharp Laboratories Of America, Inc. | Systems and methods for reconfiguration signaling |
CN108931891B (zh) * | 2013-12-17 | 2020-11-03 | Asml荷兰有限公司 | 检查方法、光刻设备、掩模以及衬底 |
WO2015196168A1 (en) * | 2014-06-21 | 2015-12-23 | Kla-Tencor Corporation | Compound imaging metrology targets |
CN107949807B (zh) * | 2015-05-15 | 2022-06-03 | 科磊股份有限公司 | 用于使用焦点敏感叠盖目标进行焦点确定的系统及方法 |
-
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012080131A (ja) * | 2000-08-30 | 2012-04-19 | Kla-Tencor Corp | 重ね合わせマーク、重ね合わせマークの設計方法および重ね合わせ測定の方法 |
JP2008227528A (ja) * | 2003-10-30 | 2008-09-25 | Asml Holding Nv | 調整可能なアライメントジオメトリ |
US7557921B1 (en) * | 2005-01-14 | 2009-07-07 | Kla-Tencor Technologies Corporation | Apparatus and methods for optically monitoring the fidelity of patterns produced by photolitographic tools |
JP2011171732A (ja) * | 2010-02-19 | 2011-09-01 | Asml Netherlands Bv | リソグラフィ装置を制御するための方法および装置 |
JP2014504376A (ja) * | 2010-12-17 | 2014-02-20 | カール ツァイス エスエムエス ゲーエムベーハー | フォトリソグラフィマスクによって処理されるウェーハ上の誤差を補正する方法及び装置 |
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CN112925177A (zh) | 2021-06-08 |
CN108475026A (zh) | 2018-08-31 |
JP7117242B2 (ja) | 2022-08-12 |
IL285530A (en) | 2021-09-30 |
TW201732660A (zh) | 2017-09-16 |
EP3403142B1 (en) | 2022-11-09 |
WO2017123464A1 (en) | 2017-07-20 |
IL285530B (en) | 2022-06-01 |
CN108475026B (zh) | 2021-04-23 |
EP3403142A1 (en) | 2018-11-21 |
IL259823B (en) | 2021-09-30 |
CN112925177B (zh) | 2022-09-06 |
US20190286781A1 (en) | 2019-09-19 |
IL259823A (en) | 2018-07-31 |
US20180232478A1 (en) | 2018-08-16 |
US10354035B2 (en) | 2019-07-16 |
KR102424805B1 (ko) | 2022-07-22 |
US10755016B2 (en) | 2020-08-25 |
EP3403142A4 (en) | 2019-09-04 |
TWI730031B (zh) | 2021-06-11 |
JP2019502959A (ja) | 2019-01-31 |
KR20180095717A (ko) | 2018-08-27 |
JP7477564B2 (ja) | 2024-05-01 |
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