KR102378952B1 - 발광소자 및 이를 포함하는 발광소자 패키지 - Google Patents

발광소자 및 이를 포함하는 발광소자 패키지 Download PDF

Info

Publication number
KR102378952B1
KR102378952B1 KR1020150120843A KR20150120843A KR102378952B1 KR 102378952 B1 KR102378952 B1 KR 102378952B1 KR 1020150120843 A KR1020150120843 A KR 1020150120843A KR 20150120843 A KR20150120843 A KR 20150120843A KR 102378952 B1 KR102378952 B1 KR 102378952B1
Authority
KR
South Korea
Prior art keywords
layer
light emitting
extraction unit
emitting device
light extraction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020150120843A
Other languages
English (en)
Korean (ko)
Other versions
KR20170025035A (ko
Inventor
박수익
김민성
성연준
이용경
최광용
Original Assignee
쑤저우 레킨 세미컨덕터 컴퍼니 리미티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 filed Critical 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드
Priority to KR1020150120843A priority Critical patent/KR102378952B1/ko
Priority to CN201680049969.5A priority patent/CN107949920B/zh
Priority to US15/749,069 priority patent/US10263154B2/en
Priority to PCT/KR2016/009444 priority patent/WO2017034346A1/ko
Priority to JP2018504821A priority patent/JP6878406B2/ja
Priority to EP16839634.9A priority patent/EP3343644B1/en
Publication of KR20170025035A publication Critical patent/KR20170025035A/ko
Application granted granted Critical
Publication of KR102378952B1 publication Critical patent/KR102378952B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H01L33/26—
    • H01L33/12—
    • H01L33/36—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H01L2924/12041—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
KR1020150120843A 2015-08-27 2015-08-27 발광소자 및 이를 포함하는 발광소자 패키지 Active KR102378952B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020150120843A KR102378952B1 (ko) 2015-08-27 2015-08-27 발광소자 및 이를 포함하는 발광소자 패키지
CN201680049969.5A CN107949920B (zh) 2015-08-27 2016-08-25 发光器件和包含该发光器件的发光器件封装
US15/749,069 US10263154B2 (en) 2015-08-27 2016-08-25 Light-emitting device and light-emitting device package comprising same
PCT/KR2016/009444 WO2017034346A1 (ko) 2015-08-27 2016-08-25 발광소자 및 이를 포함하는 발광소자 패키지
JP2018504821A JP6878406B2 (ja) 2015-08-27 2016-08-25 発光素子及びこれを含む発光素子パッケージ
EP16839634.9A EP3343644B1 (en) 2015-08-27 2016-08-25 Light-emitting device and light-emitting device package comprising same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020150120843A KR102378952B1 (ko) 2015-08-27 2015-08-27 발광소자 및 이를 포함하는 발광소자 패키지

Publications (2)

Publication Number Publication Date
KR20170025035A KR20170025035A (ko) 2017-03-08
KR102378952B1 true KR102378952B1 (ko) 2022-03-25

Family

ID=58100651

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150120843A Active KR102378952B1 (ko) 2015-08-27 2015-08-27 발광소자 및 이를 포함하는 발광소자 패키지

Country Status (6)

Country Link
US (1) US10263154B2 (https=)
EP (1) EP3343644B1 (https=)
JP (1) JP6878406B2 (https=)
KR (1) KR102378952B1 (https=)
CN (1) CN107949920B (https=)
WO (1) WO2017034346A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102486032B1 (ko) * 2015-11-04 2023-01-11 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자 및 이를 구비한 조명 장치
JP7096489B2 (ja) * 2018-09-20 2022-07-06 日亜化学工業株式会社 半導体素子の製造方法
CN113421953B (zh) * 2021-06-24 2022-12-13 马鞍山杰生半导体有限公司 深紫外发光二极管及其制作方法
JP7440782B2 (ja) * 2022-01-25 2024-02-29 日亜化学工業株式会社 発光素子の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014086573A (ja) * 2012-10-24 2014-05-12 Nichia Chem Ind Ltd 半導体発光素子

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060192225A1 (en) * 2005-02-28 2006-08-31 Chua Janet B Y Light emitting device having a layer of photonic crystals with embedded photoluminescent material and method for fabricating the device
US20060204865A1 (en) * 2005-03-08 2006-09-14 Luminus Devices, Inc. Patterned light-emitting devices
JP2007019099A (ja) * 2005-07-05 2007-01-25 Sumitomo Electric Ind Ltd 発光装置およびその製造方法
JP4947954B2 (ja) * 2005-10-31 2012-06-06 スタンレー電気株式会社 発光素子
JP5082504B2 (ja) * 2006-03-31 2012-11-28 日亜化学工業株式会社 発光素子及び発光素子の製造方法
US8643034B2 (en) * 2008-02-29 2014-02-04 Osram Opto Semiconductors Gmbh Monolithic, optoelectronic semiconductor body and method for the production thereof
US8008683B2 (en) * 2008-10-22 2011-08-30 Samsung Led Co., Ltd. Semiconductor light emitting device
DE102009006177A1 (de) * 2008-11-28 2010-06-02 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip
JP5056799B2 (ja) * 2009-06-24 2012-10-24 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子およびその製造方法
DE102009034359A1 (de) * 2009-07-17 2011-02-17 Forschungsverbund Berlin E.V. P-Kontakt und Leuchtdiode für den ultravioletten Spektralbereich
JP5409210B2 (ja) * 2009-09-01 2014-02-05 学校法人金沢工業大学 半導体発光素子
DE102010024079B4 (de) * 2010-06-17 2025-08-28 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
KR101761385B1 (ko) * 2010-07-12 2017-08-04 엘지이노텍 주식회사 발광 소자
TWI557934B (zh) * 2010-09-06 2016-11-11 晶元光電股份有限公司 半導體光電元件
KR101663192B1 (ko) * 2010-10-20 2016-10-06 엘지이노텍 주식회사 발광 소자
KR101873585B1 (ko) * 2011-08-10 2018-07-02 엘지이노텍 주식회사 발광 소자 패키지 및 이를 구비한 조명 시스템
JP6052962B2 (ja) * 2012-08-03 2016-12-27 スタンレー電気株式会社 半導体発光装置
KR101957816B1 (ko) * 2012-08-24 2019-03-13 엘지이노텍 주식회사 발광 소자
DE102012108879B4 (de) * 2012-09-20 2024-03-28 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip mit mehreren nebeneinander angeordneten aktiven Bereichen
US9196807B2 (en) * 2012-10-24 2015-11-24 Nichia Corporation Light emitting element
JP5924231B2 (ja) * 2012-10-24 2016-05-25 日亜化学工業株式会社 半導体発光素子
JP6210415B2 (ja) * 2013-07-05 2017-10-11 パナソニックＩｐマネジメント株式会社 紫外線発光素子の製造方法
TWI616004B (zh) * 2013-11-27 2018-02-21 晶元光電股份有限公司 半導體發光元件
KR20150060405A (ko) * 2013-11-26 2015-06-03 서울바이오시스 주식회사 복수의 발광셀들을 가지는 발광 다이오드 및 그것을 제조하는 방법
KR102252477B1 (ko) * 2014-08-05 2021-05-17 엘지이노텍 주식회사 발광소자 및 이를 포함하는 발광소자 패키지
KR102486032B1 (ko) * 2015-11-04 2023-01-11 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자 및 이를 구비한 조명 장치

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014086573A (ja) * 2012-10-24 2014-05-12 Nichia Chem Ind Ltd 半導体発光素子

Also Published As

Publication number Publication date
US10263154B2 (en) 2019-04-16
JP2018525821A (ja) 2018-09-06
JP6878406B2 (ja) 2021-05-26
US20180226542A1 (en) 2018-08-09
KR20170025035A (ko) 2017-03-08
EP3343644A4 (en) 2019-04-10
EP3343644B1 (en) 2021-05-05
CN107949920A (zh) 2018-04-20
CN107949920B (zh) 2020-11-10
EP3343644A1 (en) 2018-07-04
WO2017034346A1 (ko) 2017-03-02

Similar Documents

Publication Publication Date Title
KR102554702B1 (ko) 발광소자 및 이를 포함하는 발광소자 패키지
KR102407329B1 (ko) 광원 모듈 및 이를 구비한 조명 장치
KR102175345B1 (ko) 발광소자 및 조명시스템
KR20120040427A (ko) 발광소자 및 그 발광 소자의 제조 방법
KR20120020061A (ko) 발광 소자, 발광 소자 패키지, 라이트 유닛
KR102378952B1 (ko) 발광소자 및 이를 포함하는 발광소자 패키지
KR102315124B1 (ko) 발광소자 패키지
KR20120048413A (ko) 발광 소자 및 발광 소자 패키지
KR20120014972A (ko) 발광 소자, 발광 소자 제조방법, 발광 소자 패키지, 및 조명 시스템
KR20170082889A (ko) 발광소자
CN109873065B (zh) 一种半导体发光元件
KR102471944B1 (ko) 발광소자 패키지
KR102445539B1 (ko) 발광소자 및 조명장치
KR102425318B1 (ko) 발광소자 및 이를 포함하는 발광소자 패키지
KR102239628B1 (ko) 렌즈 및 이를 포함하는 발광소자 모듈
KR102234117B1 (ko) 발광소자 및 조명시스템
KR102302321B1 (ko) 발광 소자
KR20120029232A (ko) 발광소자
KR20120078047A (ko) 발광소자 및 그 발광 소자의 제조 방법
KR102320865B1 (ko) 발광 소자
US10236427B2 (en) Light emitting device package
KR102310646B1 (ko) 발광소자 패키지 및 발광소자 패키지 어레이의 분리 장치
KR20170082872A (ko) 발광소자
KR101991033B1 (ko) 발광소자 패키지
KR102403958B1 (ko) 발광소자

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

N231 Notification of change of applicant
PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U11-OTH-PR1001 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 4