KR102371435B1 - 샤워 헤드 - Google Patents

샤워 헤드 Download PDF

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Publication number
KR102371435B1
KR102371435B1 KR1020210057508A KR20210057508A KR102371435B1 KR 102371435 B1 KR102371435 B1 KR 102371435B1 KR 1020210057508 A KR1020210057508 A KR 1020210057508A KR 20210057508 A KR20210057508 A KR 20210057508A KR 102371435 B1 KR102371435 B1 KR 102371435B1
Authority
KR
South Korea
Prior art keywords
support member
region
distribution plate
gas distribution
support
Prior art date
Application number
KR1020210057508A
Other languages
English (en)
Korean (ko)
Inventor
김용수
김영범
정희석
Original Assignee
주식회사 기가레인
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 기가레인 filed Critical 주식회사 기가레인
Priority to KR1020210057508A priority Critical patent/KR102371435B1/ko
Priority to CN202210215541.0A priority patent/CN115283152B/zh
Application granted granted Critical
Publication of KR102371435B1 publication Critical patent/KR102371435B1/ko
Priority to TW111108636A priority patent/TWI786001B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/005—Nozzles or other outlets specially adapted for discharging one or more gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Massaging Devices (AREA)
  • Sewing Machines And Sewing (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cylinder Crankcases Of Internal Combustion Engines (AREA)
KR1020210057508A 2021-05-03 2021-05-03 샤워 헤드 KR102371435B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020210057508A KR102371435B1 (ko) 2021-05-03 2021-05-03 샤워 헤드
CN202210215541.0A CN115283152B (zh) 2021-05-03 2022-03-07 喷头
TW111108636A TWI786001B (zh) 2021-05-03 2022-03-09 噴頭

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020210057508A KR102371435B1 (ko) 2021-05-03 2021-05-03 샤워 헤드

Publications (1)

Publication Number Publication Date
KR102371435B1 true KR102371435B1 (ko) 2022-03-08

Family

ID=80812274

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020210057508A KR102371435B1 (ko) 2021-05-03 2021-05-03 샤워 헤드

Country Status (3)

Country Link
KR (1) KR102371435B1 (zh)
CN (1) CN115283152B (zh)
TW (1) TWI786001B (zh)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100008463U (ko) * 2009-02-17 2010-08-26 주식회사 에스엠아이 화학기상 증착 장치 및 그의 분리형 샤워 헤드
KR20130127151A (ko) * 2012-05-14 2013-11-22 피에스케이 주식회사 배플 및 이를 가지는 기판 처리 장치
KR20140011364A (ko) * 2011-03-04 2014-01-28 노벨러스 시스템즈, 인코포레이티드 하이브리드 세라믹 샤워헤드
KR20160050719A (ko) * 2014-10-30 2016-05-11 주식회사 싸이노스 세정장치
KR20200126706A (ko) * 2019-04-30 2020-11-09 피에스케이 주식회사 배플 및 이를 가지는 기판 처리 장치

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101063737B1 (ko) * 2004-07-09 2011-09-08 주성엔지니어링(주) 기판 제조장비의 샤워헤드
US8721791B2 (en) * 2010-07-28 2014-05-13 Applied Materials, Inc. Showerhead support structure for improved gas flow
JP5971870B2 (ja) * 2013-11-29 2016-08-17 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及び記録媒体
JP5801374B2 (ja) * 2013-12-27 2015-10-28 株式会社日立国際電気 半導体装置の製造方法、プログラム、及び基板処理装置
US9502218B2 (en) * 2014-01-31 2016-11-22 Applied Materials, Inc. RPS assisted RF plasma source for semiconductor processing
CN108028175B (zh) * 2015-09-22 2019-06-28 应用材料公司 喷头支撑结构
JP6715894B2 (ja) * 2018-08-07 2020-07-01 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100008463U (ko) * 2009-02-17 2010-08-26 주식회사 에스엠아이 화학기상 증착 장치 및 그의 분리형 샤워 헤드
KR20140011364A (ko) * 2011-03-04 2014-01-28 노벨러스 시스템즈, 인코포레이티드 하이브리드 세라믹 샤워헤드
KR20130127151A (ko) * 2012-05-14 2013-11-22 피에스케이 주식회사 배플 및 이를 가지는 기판 처리 장치
KR20160050719A (ko) * 2014-10-30 2016-05-11 주식회사 싸이노스 세정장치
KR20200126706A (ko) * 2019-04-30 2020-11-09 피에스케이 주식회사 배플 및 이를 가지는 기판 처리 장치

Also Published As

Publication number Publication date
TWI786001B (zh) 2022-12-01
CN115283152B (zh) 2023-03-24
CN115283152A (zh) 2022-11-04
TW202243747A (zh) 2022-11-16

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