KR102369492B1 - 3차원 finfet 구조를 갖는 분리형 게이트 비휘발성 메모리 셀들, 및 이를 제조하는 방법 - Google Patents

3차원 finfet 구조를 갖는 분리형 게이트 비휘발성 메모리 셀들, 및 이를 제조하는 방법 Download PDF

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KR102369492B1
KR102369492B1 KR1020207037367A KR20207037367A KR102369492B1 KR 102369492 B1 KR102369492 B1 KR 102369492B1 KR 1020207037367 A KR1020207037367 A KR 1020207037367A KR 20207037367 A KR20207037367 A KR 20207037367A KR 102369492 B1 KR102369492 B1 KR 102369492B1
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세르구엘 조르바
카테린 드코베르트
펭 조
진호 킴
시안 리우
난 도
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KR1020207037367A 2018-07-05 2019-06-04 3차원 finfet 구조를 갖는 분리형 게이트 비휘발성 메모리 셀들, 및 이를 제조하는 방법 Active KR102369492B1 (ko)

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US16/028,244 2018-07-05
US16/028,244 US10727240B2 (en) 2018-07-05 2018-07-05 Split gate non-volatile memory cells with three-dimensional FinFET structure
PCT/US2019/035459 WO2020009772A1 (en) 2018-07-05 2019-06-04 Split gate non-volatile memory cells with three dimensional finfet structure, and method of making same

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KR102369492B1 true KR102369492B1 (ko) 2022-03-02

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EP (1) EP3818564A1 (https=)
JP (1) JP7502258B2 (https=)
KR (1) KR102369492B1 (https=)
CN (1) CN112400230B (https=)
TW (1) TWI709247B (https=)
WO (1) WO2020009772A1 (https=)

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