JP7502258B2 - 三次元ｆｉｎｆｅｔ構造体を有する分割ゲート不揮発性メモリセル、及びその製造方法 - Google Patents

三次元ｆｉｎｆｅｔ構造体を有する分割ゲート不揮発性メモリセル、及びその製造方法 Download PDF

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JP7502258B2
JP7502258B2 JP2021500084A JP2021500084A JP7502258B2 JP 7502258 B2 JP7502258 B2 JP 7502258B2 JP 2021500084 A JP2021500084 A JP 2021500084A JP 2021500084 A JP2021500084 A JP 2021500084A JP 7502258 B2 JP7502258 B2 JP 7502258B2
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ジョルバ、セルゲイ
デコベルト、キャサリン
ゾウ、フェン
キム、ジンホ
リウ、シアン
ドー、ナン
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Silicon Storage Technology Inc
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    • H10D30/6892—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode having at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate
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    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
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JP2021500084A 2018-07-05 2019-06-04 三次元ｆｉｎｆｅｔ構造体を有する分割ゲート不揮発性メモリセル、及びその製造方法 Active JP7502258B2 (ja)

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US16/028,244 2018-07-05
US16/028,244 US10727240B2 (en) 2018-07-05 2018-07-05 Split gate non-volatile memory cells with three-dimensional FinFET structure
PCT/US2019/035459 WO2020009772A1 (en) 2018-07-05 2019-06-04 Split gate non-volatile memory cells with three dimensional finfet structure, and method of making same

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JP2021529439A JP2021529439A (ja) 2021-10-28
JP2021529439A5 JP2021529439A5 (https=) 2022-05-24
JPWO2020009772A5 JPWO2020009772A5 (https=) 2022-05-24
JP7502258B2 true JP7502258B2 (ja) 2024-06-18

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US (2) US10727240B2 (https=)
EP (1) EP3818564A1 (https=)
JP (1) JP7502258B2 (https=)
KR (1) KR102369492B1 (https=)
CN (1) CN112400230B (https=)
TW (1) TWI709247B (https=)
WO (1) WO2020009772A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11114451B1 (en) * 2020-02-27 2021-09-07 Silicon Storage Technology, Inc. Method of forming a device with FinFET split gate non-volatile memory cells and FinFET logic devices
US11362100B2 (en) * 2020-03-24 2022-06-14 Silicon Storage Technology, Inc. FinFET split gate non-volatile memory cells with enhanced floating gate to floating gate capacitive coupling
CN114256251B (zh) * 2020-09-21 2025-05-13 硅存储技术股份有限公司 形成具有存储器单元、高压器件和逻辑器件的设备的方法
JP7425929B2 (ja) * 2020-09-21 2024-01-31 シリコン ストーリッジ テクノロージー インコーポレイテッド 平面状のスプリットゲート不揮発性メモリセル、高電圧デバイス、及びｆｉｎｆｅｔ論理デバイスを有するデバイスを形成する方法
US12453136B2 (en) 2022-03-08 2025-10-21 Silicon Storage Technology, Inc. Method of forming a device with planar split gate non-volatile memory cells, planar HV devices, and FinFET logic devices on a substrate

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060208307A1 (en) 2005-03-21 2006-09-21 Ko-Hsing Chang Split gate flash memory and manufacturing method thereof
US20150179525A1 (en) 2012-06-28 2015-06-25 Walid M. Hafez High voltage three-dimensional devices having dielectric liners
JP2016502756A (ja) 2012-11-07 2016-01-28 インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ 半導体構造および半導体構造を形成する方法
US20160064398A1 (en) 2014-09-02 2016-03-03 Globalfoundries Singapore Pte. Ltd. Integrated circuits with finfet nonvolatile memory
US20160148944A1 (en) 2014-11-26 2016-05-26 Samsung Electronics Co., Ltd. Semiconductor device and method of manufacturing the same
US20160379987A1 (en) 2015-06-25 2016-12-29 Taiwan Semiconductor Manufacturing Co., Ltd. Structure with emedded efs3 and finfet device
JP2018509000A (ja) 2015-03-04 2018-03-29 シリコン ストーリッジ テクノロージー インコーポレイテッドＳｉｌｉｃｏｎ Ｓｔｏｒａｇｅ Ｔｅｃｈｎｏｌｏｇｙ， Ｉｎｃ． スプリットゲート型フラッシュメモリアレイ及びロジックデバイスの集積化

Family Cites Families (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5029130A (en) 1990-01-22 1991-07-02 Silicon Storage Technology, Inc. Single transistor non-valatile electrically alterable semiconductor memory device
US6281545B1 (en) * 1997-11-20 2001-08-28 Taiwan Semiconductor Manufacturing Company Multi-level, split-gate, flash memory cell
US6420232B1 (en) * 2000-11-14 2002-07-16 Silicon-Based Technology Corp. Methods of fabricating a scalable split-gate flash memory device having embedded triple-sides erase cathodes
US6747310B2 (en) 2002-10-07 2004-06-08 Actrans System Inc. Flash memory cells with separated self-aligned select and erase gates, and process of fabrication
US20050012137A1 (en) 2003-07-18 2005-01-20 Amitay Levi Nonvolatile memory cell having floating gate, control gate and separate erase gate, an array of such memory cells, and method of manufacturing
US6992929B2 (en) * 2004-03-17 2006-01-31 Actrans System Incorporation, Usa Self-aligned split-gate NAND flash memory and fabrication process
KR100528486B1 (ko) 2004-04-12 2005-11-15 삼성전자주식회사 불휘발성 메모리 소자 및 그 형성 방법
US7315056B2 (en) 2004-06-07 2008-01-01 Silicon Storage Technology, Inc. Semiconductor memory array of floating gate memory cells with program/erase and select gates
JP4927321B2 (ja) 2004-06-22 2012-05-09 ルネサスエレクトロニクス株式会社 半導体記憶装置
US7423310B2 (en) 2004-09-29 2008-09-09 Infineon Technologies Ag Charge-trapping memory cell and charge-trapping memory device
KR100652384B1 (ko) 2004-11-08 2006-12-06 삼성전자주식회사 2비트 형태의 불휘발성 메모리소자 및 그 제조방법
KR100630746B1 (ko) 2005-05-06 2006-10-02 삼성전자주식회사 멀티-비트 및 멀티-레벨 비휘발성 메모리 소자 및 그 동작및 제조 방법
US7205601B2 (en) * 2005-06-09 2007-04-17 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET split gate EEPROM structure and method of its fabrication
KR101100428B1 (ko) 2005-09-23 2011-12-30 삼성전자주식회사 ＳＲＯ(Ｓｉｌｉｃｏｎ Ｒｉｃｈ Ｏｘｉｄｅ) 및 이를적용한 반도체 소자의 제조방법
KR100663366B1 (ko) 2005-10-26 2007-01-02 삼성전자주식회사 자기 정렬된 부유게이트를 갖는 플래시메모리소자의제조방법 및 관련된 소자
US7754560B2 (en) 2006-01-10 2010-07-13 Freescale Semiconductor, Inc. Integrated circuit using FinFETs and having a static random access memory (SRAM)
KR101225641B1 (ko) 2006-12-27 2013-01-24 삼성전자주식회사 반도체 소자 및 그 제조 방법
US7838922B2 (en) 2007-01-24 2010-11-23 Freescale Semiconductor, Inc. Electronic device including trenches and discontinuous storage elements
US20090039410A1 (en) 2007-08-06 2009-02-12 Xian Liu Split Gate Non-Volatile Flash Memory Cell Having A Floating Gate, Control Gate, Select Gate And An Erase Gate With An Overhang Over The Floating Gate, Array And Method Of Manufacturing
TW200917425A (en) 2007-10-03 2009-04-16 Nanya Technology Corp FinFET-like elevated channel flash and manufacturing method thereof
US8068370B2 (en) 2008-04-18 2011-11-29 Macronix International Co., Ltd. Floating gate memory device with interpoly charge trapping structure
US8148768B2 (en) 2008-11-26 2012-04-03 Silicon Storage Technology, Inc. Non-volatile memory cell with self aligned floating and erase gates, and method of making same
JP2011003742A (ja) 2009-06-18 2011-01-06 Toshiba Corp 不揮発性半導体記憶装置および不揮発性半導体記憶装置の製造方法
US8461640B2 (en) 2009-09-08 2013-06-11 Silicon Storage Technology, Inc. FIN-FET non-volatile memory cell, and an array and method of manufacturing
US8941153B2 (en) 2009-11-20 2015-01-27 Taiwan Semiconductor Manufacturing Company, Ltd. FinFETs with different fin heights
US8420476B2 (en) 2010-05-27 2013-04-16 International Business Machines Corporation Integrated circuit with finFETs and MIM fin capacitor
JP2012234885A (ja) 2011-04-28 2012-11-29 Toshiba Corp 半導体装置及びその製造方法
US8785273B2 (en) 2012-04-11 2014-07-22 International Business Machines Corporation FinFET non-volatile memory and method of fabrication
US9406689B2 (en) 2013-07-31 2016-08-02 Qualcomm Incorporated Logic finFET high-K/conductive gate embedded multiple time programmable flash memory
US9368605B2 (en) * 2013-08-28 2016-06-14 Globalfoundries Inc. Semiconductor structure including a split gate nonvolatile memory cell and a high voltage transistor, and method for the formation thereof
US9614048B2 (en) 2014-06-17 2017-04-04 Taiwan Semiconductor Manufacturing Co., Ltd. Split gate flash memory structure and method of making the split gate flash memory structure
US9543153B2 (en) * 2014-07-16 2017-01-10 Taiwan Semiconductor Manufacturing Co., Ltd. Recess technique to embed flash memory in SOI technology
US9276005B1 (en) 2014-12-04 2016-03-01 Silicon Storage Technology, Inc. Non-volatile memory array with concurrently formed low and high voltage logic devices
US9276006B1 (en) 2015-01-05 2016-03-01 Silicon Storage Technology, Inc. Split gate non-volatile flash memory cell having metal-enhanced gates and method of making same
WO2016118785A1 (en) 2015-01-23 2016-07-28 Silicon Storage Technology, Inc. Method of forming self-aligned split-gate memory cell array with metal gates and logic devices
US9634018B2 (en) * 2015-03-17 2017-04-25 Silicon Storage Technology, Inc. Split gate non-volatile memory cell with 3D finFET structure, and method of making same
JP2017045755A (ja) * 2015-08-24 2017-03-02 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US10141321B2 (en) 2015-10-21 2018-11-27 Silicon Storage Technology, Inc. Method of forming flash memory with separate wordline and erase gates
US9761680B2 (en) * 2015-10-26 2017-09-12 United Microelectronics Corp. Semiconductor device with embedded non-volatile memory and method of fabricating semiconductor device
KR102056995B1 (ko) 2015-11-03 2019-12-17 실리콘 스토리지 테크놀로지 인크 금속 게이트들을 갖는 분리형 게이트 비휘발성 플래시 메모리 셀 및 이를 제조하는 방법
JP6620034B2 (ja) 2016-02-24 2019-12-11 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US9666589B1 (en) 2016-03-21 2017-05-30 Globalfoundries Inc. FinFET based flash memory cell
US9837425B2 (en) 2016-04-19 2017-12-05 United Microelectronics Corp. Semiconductor device with split gate flash memory cell structure and method of manufacturing the same
US9985042B2 (en) 2016-05-24 2018-05-29 Silicon Storage Technology, Inc. Method of integrating FinFET CMOS devices with embedded nonvolatile memory cells
US10879251B2 (en) * 2017-04-27 2020-12-29 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit and manufacturing method thereof
US10937879B2 (en) * 2017-11-30 2021-03-02 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060208307A1 (en) 2005-03-21 2006-09-21 Ko-Hsing Chang Split gate flash memory and manufacturing method thereof
US20150179525A1 (en) 2012-06-28 2015-06-25 Walid M. Hafez High voltage three-dimensional devices having dielectric liners
JP2016502756A (ja) 2012-11-07 2016-01-28 インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ 半導体構造および半導体構造を形成する方法
US20160064398A1 (en) 2014-09-02 2016-03-03 Globalfoundries Singapore Pte. Ltd. Integrated circuits with finfet nonvolatile memory
US20160148944A1 (en) 2014-11-26 2016-05-26 Samsung Electronics Co., Ltd. Semiconductor device and method of manufacturing the same
JP2018509000A (ja) 2015-03-04 2018-03-29 シリコン ストーリッジ テクノロージー インコーポレイテッドＳｉｌｉｃｏｎ Ｓｔｏｒａｇｅ Ｔｅｃｈｎｏｌｏｇｙ， Ｉｎｃ． スプリットゲート型フラッシュメモリアレイ及びロジックデバイスの集積化
US20160379987A1 (en) 2015-06-25 2016-12-29 Taiwan Semiconductor Manufacturing Co., Ltd. Structure with emedded efs3 and finfet device

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