KR102368382B1 - 식각액 조성물 및 이를 이용한 디스플레이 장치용 어레이 기판의 제조방법 - Google Patents

식각액 조성물 및 이를 이용한 디스플레이 장치용 어레이 기판의 제조방법 Download PDF

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Publication number
KR102368382B1
KR102368382B1 KR1020170030601A KR20170030601A KR102368382B1 KR 102368382 B1 KR102368382 B1 KR 102368382B1 KR 1020170030601 A KR1020170030601 A KR 1020170030601A KR 20170030601 A KR20170030601 A KR 20170030601A KR 102368382 B1 KR102368382 B1 KR 102368382B1
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KR
South Korea
Prior art keywords
acid
etchant composition
copper
weight
array substrate
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KR1020170030601A
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English (en)
Korean (ko)
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KR20180103535A (ko
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국인설
윤영진
이종문
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동우 화인켐 주식회사
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Priority to KR1020170030601A priority Critical patent/KR102368382B1/ko
Priority to CN201711244038.3A priority patent/CN108570679A/zh
Publication of KR20180103535A publication Critical patent/KR20180103535A/ko
Application granted granted Critical
Publication of KR102368382B1 publication Critical patent/KR102368382B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/3248—
    • H01L27/3262—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Metallurgy (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • ing And Chemical Polishing (AREA)
KR1020170030601A 2017-03-10 2017-03-10 식각액 조성물 및 이를 이용한 디스플레이 장치용 어레이 기판의 제조방법 KR102368382B1 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020170030601A KR102368382B1 (ko) 2017-03-10 2017-03-10 식각액 조성물 및 이를 이용한 디스플레이 장치용 어레이 기판의 제조방법
CN201711244038.3A CN108570679A (zh) 2017-03-10 2017-11-30 蚀刻液组合物、显示装置用阵列基板的制法及阵列基板

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020170030601A KR102368382B1 (ko) 2017-03-10 2017-03-10 식각액 조성물 및 이를 이용한 디스플레이 장치용 어레이 기판의 제조방법

Publications (2)

Publication Number Publication Date
KR20180103535A KR20180103535A (ko) 2018-09-19
KR102368382B1 true KR102368382B1 (ko) 2022-02-28

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CN (1) CN108570679A (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110359049B (zh) * 2018-03-26 2021-11-23 东友精细化工有限公司 含银薄膜蚀刻液组合物、利用其制造的显示装置用阵列基板及其制造方法
KR20220051612A (ko) * 2020-10-19 2022-04-26 동우 화인켐 주식회사 식각액 조성물 및 이를 이용한 표시장치용 어레이 기판의 제조방법
CN115948746B (zh) * 2022-12-30 2024-04-30 浙江奥首材料科技有限公司 一种Al/Mo蚀刻液、其制备方法与应用

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101619380B1 (ko) 2009-05-14 2016-05-11 삼성디스플레이 주식회사 식각액 조성물 및 이를 이용한 어레이 기판의 제조방법
CN102102206A (zh) * 2009-12-18 2011-06-22 鑫林科技股份有限公司 金属蚀刻液组合物及其蚀刻方法
KR101922625B1 (ko) * 2012-07-03 2018-11-28 삼성디스플레이 주식회사 금속 배선 식각액 및 이를 이용한 금속 배선 형성 방법
KR101527117B1 (ko) * 2013-06-27 2015-06-09 삼성디스플레이 주식회사 식각액 조성물, 이를 이용한 금속 배선 제조 방법 및 박막 트랜지스터 기판 제조방법
KR102150513B1 (ko) * 2014-03-13 2020-09-01 동우 화인켐 주식회사 구리막 및 티타늄막의 식각액 조성물 및 이를 이용한 액정표시장치용 어레이 기판의 제조방법
KR20160010098A (ko) * 2014-07-18 2016-01-27 동우 화인켐 주식회사 구리막 및 티타늄막의 식각액 조성물 및 이를 이용한 액정표시장치용 어레이 기판의 제조방법
KR102260190B1 (ko) * 2015-03-05 2021-06-03 동우 화인켐 주식회사 식각액 조성물 및 이를 이용한 액정 표시 장치용 어레이 기판의 제조방법
TWI684674B (zh) * 2015-03-10 2020-02-11 南韓商東友精細化工有限公司 用於蝕刻銅基金屬層的蝕刻劑組合物和使用它的蝕刻方法
TWI675093B (zh) * 2015-03-26 2019-10-21 南韓商東友精細化工有限公司 蝕刻劑組合物和製造用於液晶顯示器的陣列基板的方法
KR101963179B1 (ko) * 2015-07-30 2019-03-29 삼성디스플레이 주식회사 식각액 조성물 및 이를 이용한 박막 트랜지스터 기판의 제조방법
KR102468320B1 (ko) * 2015-08-04 2022-11-18 동우 화인켐 주식회사 금속막 식각액 조성물

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CN108570679A (zh) 2018-09-25
KR20180103535A (ko) 2018-09-19

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