KR102362672B1 - 기판의 기상 히드록실 라디칼 프로세싱을 위한 시스템 및 방법 - Google Patents

기판의 기상 히드록실 라디칼 프로세싱을 위한 시스템 및 방법 Download PDF

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KR102362672B1
KR102362672B1 KR1020170030064A KR20170030064A KR102362672B1 KR 102362672 B1 KR102362672 B1 KR 102362672B1 KR 1020170030064 A KR1020170030064 A KR 1020170030064A KR 20170030064 A KR20170030064 A KR 20170030064A KR 102362672 B1 KR102362672 B1 KR 102362672B1
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vapor
substrate
hydrogen peroxide
processing
hydroxyl radical
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KR20170105439A (ko
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이안 제이. 브라운
월리스 피. 프린츠
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H01L21/205—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0057—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/04—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by a combination of operations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • H01L21/67207—
    • H01L21/682—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0404—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

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  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
KR1020170030064A 2016-03-09 2017-03-09 기판의 기상 히드록실 라디칼 프로세싱을 위한 시스템 및 방법 Active KR102362672B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201662305715P 2016-03-09 2016-03-09
US62/305,715 2016-03-09

Publications (2)

Publication Number Publication Date
KR20170105439A KR20170105439A (ko) 2017-09-19
KR102362672B1 true KR102362672B1 (ko) 2022-02-11

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Country Status (5)

Country Link
US (1) US10490399B2 (https=)
JP (1) JP6948808B2 (https=)
KR (1) KR102362672B1 (https=)
CN (1) CN107180774B (https=)
TW (1) TWI774662B (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190119041A (ko) 2017-01-09 2019-10-21 사이넥시스 엘엘씨 가금류 생산 방법에 대한 건조 과산화수소(dhp) 가스의 적용
KR102111835B1 (ko) * 2017-11-20 2020-05-15 한국과학기술원 서브 챔버를 구비한 iCVD 시스템 및 방법
CN108380569A (zh) * 2018-03-02 2018-08-10 常州瑞择微电子科技有限公司 高浓度oh自由基发生装置
WO2020159854A1 (en) * 2019-01-28 2020-08-06 Tokyo Electron Limited Photo-assisted chemical vapor etch for selective removal of ruthenium
CN110797245B (zh) * 2019-10-28 2022-11-25 北京北方华创微电子装备有限公司 一种半导体加工设备
KR20230004523A (ko) * 2020-04-14 2023-01-06 라시크 아이엔씨. 수소 열화의 억제
KR102520916B1 (ko) * 2020-12-16 2023-04-11 동명대학교산학협력단 반도체 공정의 화학기계적 연마(cmp)를 위한 히드록시 라디칼과 용존산소량 제어를 통한 고능률 하이브리드 연마 시스템
KR102489838B1 (ko) * 2020-12-16 2023-01-17 동명대학교산학협력단 반도체 공정의 화학기계적 연마(CMP)를 위한 연마 입자 분산성 향상을 통한 시너지 효과 극대화와 SiC 및 GaN 기판 가공 방법 및 시스템
WO2024074929A1 (en) * 2022-10-03 2024-04-11 Rasirc, Inc. Hydrogen peroxide plasma etch of ashable hard mask

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000195835A (ja) 1998-12-24 2000-07-14 Toshiba Corp 半導体装置の製造方法及び製造装置
US20120285492A1 (en) 2011-05-12 2012-11-15 Applied Materials, Inc. Methods of dry stripping boron-carbon films
US8764905B1 (en) 2013-03-14 2014-07-01 Intel Corporation Cleaning organic residues from EUV optics and masks
US20150357202A1 (en) 2014-06-10 2015-12-10 Lam Research Corporation Peroxide-vapor treatment for enhancing photoresist-strip performance and modifying organic films

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1212953A (en) * 1982-05-01 1986-10-21 Ian M. Campbell Nitration of organic compounds and organic nitrogen compounds produced
WO1991009987A1 (en) * 1989-12-20 1991-07-11 Hughes Aircraft Company Peroxide composition for removing organic contaminants and method of using same
US5269850A (en) * 1989-12-20 1993-12-14 Hughes Aircraft Company Method of removing organic flux using peroxide composition
JP3034720B2 (ja) * 1993-03-31 2000-04-17 ウシオ電機株式会社 表面洗浄方法もしくは表面改質方法
JP3075352B2 (ja) * 1998-04-15 2000-08-14 日本電気株式会社 化学的機械研磨液の供給方法および装置
JP2002110611A (ja) * 2000-10-04 2002-04-12 Texas Instr Japan Ltd 半導体ウェハの洗浄方法及び装置
JP2002192089A (ja) * 2000-12-25 2002-07-10 Nomura Micro Sci Co Ltd 洗浄方法
JP2003077824A (ja) * 2001-09-06 2003-03-14 Dainippon Screen Mfg Co Ltd 基板処理装置
JP4038557B2 (ja) * 2002-04-16 2008-01-30 リアライズ・アドバンストテクノロジ株式会社 レジスト除去装置及びレジスト除去方法
US6848455B1 (en) * 2002-04-22 2005-02-01 Novellus Systems, Inc. Method and apparatus for removing photoresist and post-etch residue from semiconductor substrates by in-situ generation of oxidizing species
US7364839B2 (en) * 2002-07-24 2008-04-29 Kabushiki Kaisha Toshiba Method for forming a pattern and substrate-processing apparatus
JP2004073981A (ja) * 2002-08-15 2004-03-11 Tokyo Ohka Kogyo Co Ltd 熱安定化装置の内部洗浄方法
JP4034240B2 (ja) * 2003-06-25 2008-01-16 シャープ株式会社 剥離洗浄方法および剥離洗浄装置
KR20070015260A (ko) * 2005-07-30 2007-02-02 삼성전자주식회사 선형나노선재의 제조방법 및 이에 의한 선형나노선재그리고 선형나노선재를 이용한 박막트랜지스터 기판
WO2007058287A1 (ja) * 2005-11-18 2007-05-24 Mitsubishi Gas Chemical Company, Inc. 物質の改質方法及び改質装置
US7527695B2 (en) * 2006-06-21 2009-05-05 Asahi Glass Company, Limited Apparatus and method for cleaning substrate
JP4536711B2 (ja) * 2006-12-25 2010-09-01 東京エレクトロン株式会社 基板処理装置
KR20080109564A (ko) * 2007-06-13 2008-12-17 주식회사 하이닉스반도체 포토마스크의 세정장치 및 이를 이용한 세정방법
JP2010161350A (ja) * 2008-12-09 2010-07-22 Hitachi Kokusai Electric Inc 基板処理方法
US9735026B2 (en) * 2012-11-27 2017-08-15 Tokyo Electron Limited Controlling cleaning of a layer on a substrate using nozzles
WO2015070168A1 (en) * 2013-11-11 2015-05-14 Tokyo Electron Limited Method and hardware for enhanced removal of post etch polymer and hardmask removal

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000195835A (ja) 1998-12-24 2000-07-14 Toshiba Corp 半導体装置の製造方法及び製造装置
US20120285492A1 (en) 2011-05-12 2012-11-15 Applied Materials, Inc. Methods of dry stripping boron-carbon films
US8764905B1 (en) 2013-03-14 2014-07-01 Intel Corporation Cleaning organic residues from EUV optics and masks
US20150357202A1 (en) 2014-06-10 2015-12-10 Lam Research Corporation Peroxide-vapor treatment for enhancing photoresist-strip performance and modifying organic films

Also Published As

Publication number Publication date
US10490399B2 (en) 2019-11-26
JP6948808B2 (ja) 2021-10-13
CN107180774A (zh) 2017-09-19
KR20170105439A (ko) 2017-09-19
US20170263436A1 (en) 2017-09-14
CN107180774B (zh) 2022-05-31
TWI774662B (zh) 2022-08-21
TW201801177A (zh) 2018-01-01
JP2017163143A (ja) 2017-09-14

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