KR102353250B1 - 기판의 평면내 왜곡을 결정하기 위한 방법 및 시스템 - Google Patents

기판의 평면내 왜곡을 결정하기 위한 방법 및 시스템 Download PDF

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KR102353250B1
KR102353250B1 KR1020177032141A KR20177032141A KR102353250B1 KR 102353250 B1 KR102353250 B1 KR 102353250B1 KR 1020177032141 A KR1020177032141 A KR 1020177032141A KR 20177032141 A KR20177032141 A KR 20177032141A KR 102353250 B1 KR102353250 B1 KR 102353250B1
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substrate
plane distortion
state
determining
film stress
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KR20170136569A (ko
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마크 디 스미스
호세 솔로몬
스튜어트 셔윈
월터 디 미허
아디 레비
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케이엘에이 코포레이션
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/16—Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge
    • G01B11/161—Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge by interferometric means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G01B11/2441—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures using interferometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/02015—Interferometers characterised by the beam path configuration
    • G01B9/02017—Interferometers characterised by the beam path configuration with multiple interactions between the target object and light beams, e.g. beam reflections occurring from different locations
    • G01B9/02021—Interferometers characterised by the beam path configuration with multiple interactions between the target object and light beams, e.g. beam reflections occurring from different locations contacting different faces of object, e.g. opposite faces
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/02015—Interferometers characterised by the beam path configuration
    • G01B9/02027—Two or more interferometric channels or interferometers
    • H01L22/12—
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
KR1020177032141A 2015-04-06 2016-04-06 기판의 평면내 왜곡을 결정하기 위한 방법 및 시스템 Active KR102353250B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201562143708P 2015-04-06 2015-04-06
US62/143,708 2015-04-06
US15/091,021 US10024654B2 (en) 2015-04-06 2016-04-05 Method and system for determining in-plane distortions in a substrate
US15/091,021 2016-04-05
PCT/US2016/026148 WO2016164415A1 (en) 2015-04-06 2016-04-06 Method and system for determining in-plane distortions in a substrate

Publications (2)

Publication Number Publication Date
KR20170136569A KR20170136569A (ko) 2017-12-11
KR102353250B1 true KR102353250B1 (ko) 2022-01-18

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KR1020177032141A Active KR102353250B1 (ko) 2015-04-06 2016-04-06 기판의 평면내 왜곡을 결정하기 위한 방법 및 시스템

Country Status (7)

Country Link
US (1) US10024654B2 (https=)
JP (1) JP6762317B2 (https=)
KR (1) KR102353250B1 (https=)
CN (1) CN107431030B (https=)
SG (1) SG11201708137VA (https=)
TW (1) TWI661175B (https=)
WO (1) WO2016164415A1 (https=)

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EP3457213A1 (en) * 2017-09-18 2019-03-20 ASML Netherlands B.V. Methods and apparatus for use in a device manufacturing method
CN112585540B (zh) * 2018-08-22 2024-09-17 Asml荷兰有限公司 量测设备
KR102760929B1 (ko) 2019-01-21 2025-02-03 삼성전자주식회사 반도체 소자 제조 방법
TWI731760B (zh) * 2020-07-28 2021-06-21 亞亞科技股份有限公司 電路板翹曲檢測裝置
US11829077B2 (en) * 2020-12-11 2023-11-28 Kla Corporation System and method for determining post bonding overlay
CN113203357B (zh) * 2021-04-09 2022-08-09 中国科学院上海光学精密机械研究所 一种双侧斐索干涉仪检测装置
US12165930B2 (en) * 2021-06-03 2024-12-10 Kla Corporation Adaptive modeling misregistration measurement system and method
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US12385850B2 (en) 2021-08-16 2025-08-12 Globalwafers Co., Ltd. Semiconductor wafers using front-end processed wafer global geometry metrics
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JP2025516535A (ja) * 2022-05-13 2025-05-30 アプライド マテリアルズ インコーポレイテッド 基板曲率を使用して面外歪みを補償するためのドーズマッピング
US20250028294A1 (en) * 2023-07-18 2025-01-23 Applied Materials, Inc. Measurement of inherent substrate distortion
CN117238812B (zh) * 2023-11-10 2024-04-05 四川省农业机械科学研究院 基板翘曲测量装置及测量方法

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Also Published As

Publication number Publication date
US20160290789A1 (en) 2016-10-06
WO2016164415A1 (en) 2016-10-13
JP6762317B2 (ja) 2020-09-30
JP2018512738A (ja) 2018-05-17
US10024654B2 (en) 2018-07-17
SG11201708137VA (en) 2017-11-29
TW201702552A (zh) 2017-01-16
CN107431030B (zh) 2020-10-09
KR20170136569A (ko) 2017-12-11
CN107431030A (zh) 2017-12-01
TWI661175B (zh) 2019-06-01

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