SG11201708137VA - Method and system for determining in-plane distortions in a substrate - Google Patents

Method and system for determining in-plane distortions in a substrate

Info

Publication number
SG11201708137VA
SG11201708137VA SG11201708137VA SG11201708137VA SG11201708137VA SG 11201708137V A SG11201708137V A SG 11201708137VA SG 11201708137V A SG11201708137V A SG 11201708137VA SG 11201708137V A SG11201708137V A SG 11201708137VA SG 11201708137V A SG11201708137V A SG 11201708137VA
Authority
SG
Singapore
Prior art keywords
substrate
determining
plane distortions
distortions
plane
Prior art date
Application number
SG11201708137VA
Other languages
English (en)
Inventor
Mark D Smith
Jose Solomon
Stuart Sherwin
Walter D Mieher
Ady Levy
Original Assignee
Kla Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kla Tencor Corp filed Critical Kla Tencor Corp
Publication of SG11201708137VA publication Critical patent/SG11201708137VA/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/16—Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge
    • G01B11/161—Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge by interferometric means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G01B11/2441—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures using interferometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/02015—Interferometers characterised by the beam path configuration
    • G01B9/02017—Interferometers characterised by the beam path configuration with multiple interactions between the target object and light beams, e.g. beam reflections occurring from different locations
    • G01B9/02021—Interferometers characterised by the beam path configuration with multiple interactions between the target object and light beams, e.g. beam reflections occurring from different locations contacting different faces of object, e.g. opposite faces
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/02015—Interferometers characterised by the beam path configuration
    • G01B9/02027—Two or more interferometric channels or interferometers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
SG11201708137VA 2015-04-06 2016-04-06 Method and system for determining in-plane distortions in a substrate SG11201708137VA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562143708P 2015-04-06 2015-04-06
US15/091,021 US10024654B2 (en) 2015-04-06 2016-04-05 Method and system for determining in-plane distortions in a substrate
PCT/US2016/026148 WO2016164415A1 (en) 2015-04-06 2016-04-06 Method and system for determining in-plane distortions in a substrate

Publications (1)

Publication Number Publication Date
SG11201708137VA true SG11201708137VA (en) 2017-11-29

Family

ID=57017441

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201708137VA SG11201708137VA (en) 2015-04-06 2016-04-06 Method and system for determining in-plane distortions in a substrate

Country Status (7)

Country Link
US (1) US10024654B2 (https=)
JP (1) JP6762317B2 (https=)
KR (1) KR102353250B1 (https=)
CN (1) CN107431030B (https=)
SG (1) SG11201708137VA (https=)
TW (1) TWI661175B (https=)
WO (1) WO2016164415A1 (https=)

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CN112585540B (zh) * 2018-08-22 2024-09-17 Asml荷兰有限公司 量测设备
KR102760929B1 (ko) 2019-01-21 2025-02-03 삼성전자주식회사 반도체 소자 제조 방법
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US11829077B2 (en) * 2020-12-11 2023-11-28 Kla Corporation System and method for determining post bonding overlay
CN113203357B (zh) * 2021-04-09 2022-08-09 中国科学院上海光学精密机械研究所 一种双侧斐索干涉仪检测装置
US12165930B2 (en) * 2021-06-03 2024-12-10 Kla Corporation Adaptive modeling misregistration measurement system and method
US11782411B2 (en) 2021-07-28 2023-10-10 Kla Corporation System and method for mitigating overlay distortion patterns caused by a wafer bonding tool
US12385850B2 (en) 2021-08-16 2025-08-12 Globalwafers Co., Ltd. Semiconductor wafers using front-end processed wafer global geometry metrics
US11940266B2 (en) * 2021-09-21 2024-03-26 The Aerospace Corporation Process for rapidly measuring coefficient of moisture expansion (CME) values for materials
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US20250028294A1 (en) * 2023-07-18 2025-01-23 Applied Materials, Inc. Measurement of inherent substrate distortion
CN117238812B (zh) * 2023-11-10 2024-04-05 四川省农业机械科学研究院 基板翘曲测量装置及测量方法

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Also Published As

Publication number Publication date
US20160290789A1 (en) 2016-10-06
WO2016164415A1 (en) 2016-10-13
JP6762317B2 (ja) 2020-09-30
JP2018512738A (ja) 2018-05-17
KR102353250B1 (ko) 2022-01-18
US10024654B2 (en) 2018-07-17
TW201702552A (zh) 2017-01-16
CN107431030B (zh) 2020-10-09
KR20170136569A (ko) 2017-12-11
CN107431030A (zh) 2017-12-01
TWI661175B (zh) 2019-06-01

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