KR102351832B1 - 접합 기판의 분단 방법 및 브레이크날 - Google Patents

접합 기판의 분단 방법 및 브레이크날 Download PDF

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Publication number
KR102351832B1
KR102351832B1 KR1020150047225A KR20150047225A KR102351832B1 KR 102351832 B1 KR102351832 B1 KR 102351832B1 KR 1020150047225 A KR1020150047225 A KR 1020150047225A KR 20150047225 A KR20150047225 A KR 20150047225A KR 102351832 B1 KR102351832 B1 KR 102351832B1
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KR
South Korea
Prior art keywords
bonded substrate
dividing
main surface
predetermined
protective layer
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KR1020150047225A
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English (en)
Korean (ko)
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KR20160011566A (ko
Inventor
마사카즈 다케다
켄지 무라카미
켄타 다무라
마모루 히데시마
타이치 하시모토
노리유키 구리야마
히사시 이소카와
Original Assignee
미쓰보시 다이야몬도 고교 가부시키가이샤
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Publication of KR20160011566A publication Critical patent/KR20160011566A/ko
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Publication of KR102351832B1 publication Critical patent/KR102351832B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/799—Apparatus for disconnecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/98—Methods for disconnecting semiconductor or solid-state bodies
KR1020150047225A 2014-07-22 2015-04-03 접합 기판의 분단 방법 및 브레이크날 KR102351832B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014148734A JP6365056B2 (ja) 2014-07-22 2014-07-22 貼り合わせ基板の分断方法およびブレーク刃
JPJP-P-2014-148734 2014-07-22

Publications (2)

Publication Number Publication Date
KR20160011566A KR20160011566A (ko) 2016-02-01
KR102351832B1 true KR102351832B1 (ko) 2022-01-14

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KR1020150047225A KR102351832B1 (ko) 2014-07-22 2015-04-03 접합 기판의 분단 방법 및 브레이크날

Country Status (4)

Country Link
JP (1) JP6365056B2 (zh)
KR (1) KR102351832B1 (zh)
CN (1) CN105269693B (zh)
TW (1) TWI661999B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6315634B2 (ja) * 2016-05-18 2018-04-25 株式会社アマダホールディングス 複合加工システム及びレーザ切断加工方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000124159A (ja) * 1998-10-13 2000-04-28 Sharp Corp 半導体素子の製造方法
JP2001185798A (ja) 1999-12-27 2001-07-06 Furukawa Electric Co Ltd:The 素子分離装置
JP2011046581A (ja) 2009-08-28 2011-03-10 Seiko Instruments Inc 接合ガラスの切断方法、パッケージの製造方法、パッケージ、圧電振動子、発振器、電子機器及び電波時計
JP2014083821A (ja) 2012-10-26 2014-05-12 Mitsuboshi Diamond Industrial Co Ltd 脆性材料基板の分断方法並びに分断装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08124878A (ja) * 1994-10-20 1996-05-17 Hitachi Ltd 半導体ウエハのブレーキング方法および装置
JP2861991B2 (ja) * 1997-10-20 1999-02-24 日亜化学工業株式会社 窒化ガリウム系化合物半導体チップの製造方法
JP3326384B2 (ja) * 1998-03-12 2002-09-24 古河電気工業株式会社 半導体ウエハーの劈開方法およびその装置
KR100338983B1 (ko) * 1998-11-30 2002-07-18 윤종용 웨이퍼분리도구및이를이용하는웨이퍼분리방법
JP2001110755A (ja) * 1999-10-04 2001-04-20 Tokyo Seimitsu Co Ltd 半導体チップ製造方法
JP2010040621A (ja) 2008-08-01 2010-02-18 Toshiba Corp 固体撮像デバイス及びその製造方法
TWI462885B (zh) * 2010-12-13 2014-12-01 Mitsuboshi Diamond Ind Co Ltd Method of breaking the substrate
JP2013089622A (ja) * 2011-10-13 2013-05-13 Mitsuboshi Diamond Industrial Co Ltd 半導体基板のブレイク方法
JP5991133B2 (ja) * 2012-10-16 2016-09-14 三星ダイヤモンド工業株式会社 脆性材料基板のブレイク用治具及びブレイク方法
JP6268917B2 (ja) * 2013-10-25 2018-01-31 三星ダイヤモンド工業株式会社 ブレイク装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000124159A (ja) * 1998-10-13 2000-04-28 Sharp Corp 半導体素子の製造方法
JP2001185798A (ja) 1999-12-27 2001-07-06 Furukawa Electric Co Ltd:The 素子分離装置
JP2011046581A (ja) 2009-08-28 2011-03-10 Seiko Instruments Inc 接合ガラスの切断方法、パッケージの製造方法、パッケージ、圧電振動子、発振器、電子機器及び電波時計
JP2014083821A (ja) 2012-10-26 2014-05-12 Mitsuboshi Diamond Industrial Co Ltd 脆性材料基板の分断方法並びに分断装置

Also Published As

Publication number Publication date
TW201604158A (zh) 2016-02-01
CN105269693A (zh) 2016-01-27
TWI661999B (zh) 2019-06-11
JP6365056B2 (ja) 2018-08-01
JP2016022669A (ja) 2016-02-08
KR20160011566A (ko) 2016-02-01
CN105269693B (zh) 2019-01-04

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