KR102335672B1 - 적층체 및 타깃재 - Google Patents

적층체 및 타깃재 Download PDF

Info

Publication number
KR102335672B1
KR102335672B1 KR1020190107033A KR20190107033A KR102335672B1 KR 102335672 B1 KR102335672 B1 KR 102335672B1 KR 1020190107033 A KR1020190107033 A KR 1020190107033A KR 20190107033 A KR20190107033 A KR 20190107033A KR 102335672 B1 KR102335672 B1 KR 102335672B1
Authority
KR
South Korea
Prior art keywords
film
blackening film
blackening
metal layer
laminated
Prior art date
Application number
KR1020190107033A
Other languages
English (en)
Korean (ko)
Other versions
KR20200026740A (ko
Inventor
유타 기무라
마사타카 가츠미
신고 가와시마
카즈키 미나미
Original Assignee
다이도 토쿠슈코 카부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 다이도 토쿠슈코 카부시키가이샤 filed Critical 다이도 토쿠슈코 카부시키가이샤
Publication of KR20200026740A publication Critical patent/KR20200026740A/ko
Application granted granted Critical
Publication of KR102335672B1 publication Critical patent/KR102335672B1/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01022—Titanium [Ti]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nonlinear Science (AREA)
  • Composite Materials (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Physical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Laminated Bodies (AREA)
KR1020190107033A 2018-09-03 2019-08-30 적층체 및 타깃재 KR102335672B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2018164810 2018-09-03
JPJP-P-2018-164810 2018-09-03
JP2019117759A JP7326918B2 (ja) 2018-09-03 2019-06-25 積層体
JPJP-P-2019-117759 2019-06-25

Publications (2)

Publication Number Publication Date
KR20200026740A KR20200026740A (ko) 2020-03-11
KR102335672B1 true KR102335672B1 (ko) 2021-12-03

Family

ID=69737275

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020190107033A KR102335672B1 (ko) 2018-09-03 2019-08-30 적층체 및 타깃재

Country Status (3)

Country Link
JP (1) JP7326918B2 (zh)
KR (1) KR102335672B1 (zh)
TW (1) TWI712502B (zh)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009025112A1 (ja) * 2007-08-22 2009-02-26 Sumitomo Electric Industries, Ltd. 表面被覆切削工具
JP2018513501A (ja) * 2015-04-24 2018-05-24 エルジー イノテック カンパニー リミテッド タッチウィンドウ
JP2018170126A (ja) * 2017-03-29 2018-11-01 ジオマテック株式会社 有機エレクトロルミネッセンス素子用電極、有機エレクトロルミネッセンス素子、有機エレクトロルミネッセンス表示装置、及び有機エレクトロルミネッセンス素子用電極の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6043264B2 (ja) * 2013-09-30 2016-12-14 株式会社コベルコ科研 入力装置に用いられる電極
US11926558B2 (en) * 2015-03-27 2024-03-12 Lg Chem Ltd. Conductive structure, manufacturing method therefor, and electrode comprising conductive structure
JP2017068219A (ja) * 2015-10-02 2017-04-06 株式会社コベルコ科研 電極構造
WO2017170639A1 (ja) * 2016-03-29 2017-10-05 大同特殊鋼株式会社 チタン合金製コーティング膜及びチタン合金製ターゲット材
JP6868426B2 (ja) * 2016-03-29 2021-05-12 東北特殊鋼株式会社 チタン合金製コーティング膜及びその製造方法、並びにチタン合金製ターゲット材の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009025112A1 (ja) * 2007-08-22 2009-02-26 Sumitomo Electric Industries, Ltd. 表面被覆切削工具
JP2018513501A (ja) * 2015-04-24 2018-05-24 エルジー イノテック カンパニー リミテッド タッチウィンドウ
JP2018170126A (ja) * 2017-03-29 2018-11-01 ジオマテック株式会社 有機エレクトロルミネッセンス素子用電極、有機エレクトロルミネッセンス素子、有機エレクトロルミネッセンス表示装置、及び有機エレクトロルミネッセンス素子用電極の製造方法

Also Published As

Publication number Publication date
TW202017741A (zh) 2020-05-16
JP2020037253A (ja) 2020-03-12
KR20200026740A (ko) 2020-03-11
TWI712502B (zh) 2020-12-11
JP7326918B2 (ja) 2023-08-16

Similar Documents

Publication Publication Date Title
US11569464B2 (en) Display device
US10276593B2 (en) Active matrix substrate and method for manufacturing same, display device using active matrix substrate
JP5540517B2 (ja) 画像表示装置
US7956947B2 (en) Thin film transistor array substrate having improved electrical characteristics and method of manufacturing the same
KR101489652B1 (ko) 박막 트랜지스터 기판 및 이의 제조 방법
KR101511231B1 (ko) 투명도전막과 그 제조방법 및 투명도전성 기재, 발광디바이스
US8269220B2 (en) Transparent transistor with multi-layered structures and method of manufacturing the same
KR101175085B1 (ko) 반도체 장치, 반도체 장치를 갖는 액정 표시 장치, 반도체 장치의 제조 방법
US9368523B2 (en) Semiconductor device, method for manufacturing semiconductor device, and display device
US9142682B2 (en) Thin film transistor and manufacturing method thereof
CN105938843B (zh) 透明有机发光显示设备以及制造其的方法
TW201401523A (zh) 半導體裝置及其製造方法
KR101847751B1 (ko) 입력 장치에 사용되는 전극, 및 그 제조 방법
KR102534082B1 (ko) 표시 기판, 표시장치 및 터치패널
US8373832B2 (en) Wiring layer, semiconductor device, and liquid crystal display device using semiconductor device
KR102004398B1 (ko) 표시 장치 및 그 제조 방법
KR20090066245A (ko) 투명전도막 및 이의 제조방법
CN106233196B (zh) 液晶显示面板及其制造方法
WO2016158181A1 (ja) 窒素含有Ｃｕ合金膜、積層膜、およびこれらの製造方法、ならびにＣｕ合金スパッタリングターゲット
KR102335672B1 (ko) 적층체 및 타깃재
KR20190068171A (ko) 박막 트랜지스터, 그 제조방법 및 이를 포함하는 표시장치
KR101941394B1 (ko) 투명 도전성 기판 및 투명 적층 구조체
CN110872687B (zh) 层叠体及靶材
JP6706653B2 (ja) アクティブマトリクス基板
KR20100050222A (ko) 박막 트랜지스터 기판 및 그의 제조 방법

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E902 Notification of reason for refusal
E90F Notification of reason for final refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant