KR102335672B1 - 적층체 및 타깃재 - Google Patents
적층체 및 타깃재 Download PDFInfo
- Publication number
- KR102335672B1 KR102335672B1 KR1020190107033A KR20190107033A KR102335672B1 KR 102335672 B1 KR102335672 B1 KR 102335672B1 KR 1020190107033 A KR1020190107033 A KR 1020190107033A KR 20190107033 A KR20190107033 A KR 20190107033A KR 102335672 B1 KR102335672 B1 KR 102335672B1
- Authority
- KR
- South Korea
- Prior art keywords
- film
- blackening film
- blackening
- metal layer
- laminated
- Prior art date
Links
- 239000013077 target material Substances 0.000 title claims description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 76
- 239000002184 metal Substances 0.000 claims abstract description 75
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 239000010936 titanium Substances 0.000 claims abstract description 25
- 229910001069 Ti alloy Inorganic materials 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 19
- 239000012535 impurity Substances 0.000 claims abstract description 11
- 150000004767 nitrides Chemical class 0.000 claims abstract description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 239000010408 film Substances 0.000 description 137
- 239000010410 layer Substances 0.000 description 108
- 239000004065 semiconductor Substances 0.000 description 19
- 239000002585 base Substances 0.000 description 14
- 239000007789 gas Substances 0.000 description 14
- 239000000203 mixture Substances 0.000 description 14
- 238000011156 evaluation Methods 0.000 description 12
- 238000005546 reactive sputtering Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000001039 wet etching Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 229910001873 dinitrogen Inorganic materials 0.000 description 8
- 239000011229 interlayer Substances 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 229910004205 SiNX Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 238000000870 ultraviolet spectroscopy Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01022—Titanium [Ti]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Composite Materials (AREA)
- Physical Vapour Deposition (AREA)
- Laminated Bodies (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2018-164810 | 2018-09-03 | ||
JP2018164810 | 2018-09-03 | ||
JPJP-P-2019-117759 | 2019-06-25 | ||
JP2019117759A JP7326918B2 (ja) | 2018-09-03 | 2019-06-25 | 積層体 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20200026740A KR20200026740A (ko) | 2020-03-11 |
KR102335672B1 true KR102335672B1 (ko) | 2021-12-03 |
Family
ID=69737275
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020190107033A KR102335672B1 (ko) | 2018-09-03 | 2019-08-30 | 적층체 및 타깃재 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP7326918B2 (zh) |
KR (1) | KR102335672B1 (zh) |
TW (1) | TWI712502B (zh) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009025112A1 (ja) * | 2007-08-22 | 2009-02-26 | Sumitomo Electric Industries, Ltd. | 表面被覆切削工具 |
JP2018513501A (ja) * | 2015-04-24 | 2018-05-24 | エルジー イノテック カンパニー リミテッド | タッチウィンドウ |
JP2018170126A (ja) * | 2017-03-29 | 2018-11-01 | ジオマテック株式会社 | 有機エレクトロルミネッセンス素子用電極、有機エレクトロルミネッセンス素子、有機エレクトロルミネッセンス表示装置、及び有機エレクトロルミネッセンス素子用電極の製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6043264B2 (ja) | 2013-09-30 | 2016-12-14 | 株式会社コベルコ科研 | 入力装置に用いられる電極 |
CN107428127B (zh) * | 2015-03-27 | 2019-11-19 | 株式会社Lg化学 | 导电结构体、其制造方法以及包括导电结构体的电极 |
JP2017068219A (ja) | 2015-10-02 | 2017-04-06 | 株式会社コベルコ科研 | 電極構造 |
WO2017170639A1 (ja) | 2016-03-29 | 2017-10-05 | 大同特殊鋼株式会社 | チタン合金製コーティング膜及びチタン合金製ターゲット材 |
JP6868426B2 (ja) * | 2016-03-29 | 2021-05-12 | 東北特殊鋼株式会社 | チタン合金製コーティング膜及びその製造方法、並びにチタン合金製ターゲット材の製造方法 |
-
2019
- 2019-06-25 JP JP2019117759A patent/JP7326918B2/ja active Active
- 2019-08-30 KR KR1020190107033A patent/KR102335672B1/ko active IP Right Grant
- 2019-09-02 TW TW108131535A patent/TWI712502B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009025112A1 (ja) * | 2007-08-22 | 2009-02-26 | Sumitomo Electric Industries, Ltd. | 表面被覆切削工具 |
JP2018513501A (ja) * | 2015-04-24 | 2018-05-24 | エルジー イノテック カンパニー リミテッド | タッチウィンドウ |
JP2018170126A (ja) * | 2017-03-29 | 2018-11-01 | ジオマテック株式会社 | 有機エレクトロルミネッセンス素子用電極、有機エレクトロルミネッセンス素子、有機エレクトロルミネッセンス表示装置、及び有機エレクトロルミネッセンス素子用電極の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
TWI712502B (zh) | 2020-12-11 |
TW202017741A (zh) | 2020-05-16 |
JP7326918B2 (ja) | 2023-08-16 |
KR20200026740A (ko) | 2020-03-11 |
JP2020037253A (ja) | 2020-03-12 |
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A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E902 | Notification of reason for refusal | ||
E90F | Notification of reason for final refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant |