KR102332028B1 - 기판 처리 방법 및 기판 처리 장치 - Google Patents

기판 처리 방법 및 기판 처리 장치 Download PDF

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Publication number
KR102332028B1
KR102332028B1 KR1020140150004A KR20140150004A KR102332028B1 KR 102332028 B1 KR102332028 B1 KR 102332028B1 KR 1020140150004 A KR1020140150004 A KR 1020140150004A KR 20140150004 A KR20140150004 A KR 20140150004A KR 102332028 B1 KR102332028 B1 KR 102332028B1
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South Korea
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substrate
electrode
voltage
gas
substrate processing
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Korean (ko)
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KR20150055549A (ko
Inventor
마사후미 우라카와
루이 다카하시
마사히로 오가사와라
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Plasma Technology (AREA)
KR1020140150004A 2013-11-13 2014-10-31 기판 처리 방법 및 기판 처리 장치 Active KR102332028B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013234871A JP6401901B2 (ja) 2013-11-13 2013-11-13 基板処理方法及び基板処理装置
JPJP-P-2013-234871 2013-11-13

Publications (2)

Publication Number Publication Date
KR20150055549A KR20150055549A (ko) 2015-05-21
KR102332028B1 true KR102332028B1 (ko) 2021-11-26

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ID=53044148

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KR1020140150004A Active KR102332028B1 (ko) 2013-11-13 2014-10-31 기판 처리 방법 및 기판 처리 장치

Country Status (4)

Country Link
US (1) US9530657B2 (https=)
JP (1) JP6401901B2 (https=)
KR (1) KR102332028B1 (https=)
TW (1) TWI660421B (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101842124B1 (ko) 2016-05-27 2018-03-27 세메스 주식회사 지지 유닛, 기판 처리 장치 및 기판 처리 방법
JP6789099B2 (ja) * 2016-12-26 2020-11-25 東京エレクトロン株式会社 計測方法、除電方法及びプラズマ処理装置
JP6739326B2 (ja) * 2016-12-27 2020-08-12 三菱電機株式会社 評価装置及び評価方法
US10950483B2 (en) * 2017-11-28 2021-03-16 Taiwan Semiconductor Manufacturing Co., Ltd. Systems and methods for fixed focus ring processing
CN111937132A (zh) * 2018-04-04 2020-11-13 朗姆研究公司 带密封表面的静电卡盘
JP7020311B2 (ja) * 2018-06-14 2022-02-16 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP7169920B2 (ja) * 2019-03-26 2022-11-11 東京エレクトロン株式会社 静電吸着装置及び除電方法
KR102299888B1 (ko) * 2019-10-11 2021-09-08 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
TWI775083B (zh) * 2020-05-26 2022-08-21 毅力科技有限公司 真空壓膜系統及真空壓膜方法
JP7515327B2 (ja) 2020-07-13 2024-07-12 東京エレクトロン株式会社 基板離脱方法及びプラズマ処理装置
JP7578360B2 (ja) * 2020-12-22 2024-11-06 東京エレクトロン株式会社 除電方法及びプラズマ処理システム
US20250308967A1 (en) * 2024-03-26 2025-10-02 Applied Materials, Inc. Chucking sensor using floating esc power supplies

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002222799A (ja) * 2001-01-25 2002-08-09 Tokyo Electron Ltd プラズマ処理装置およびそのクリーニング方法および静電チャックの除電方法
JP2003264224A (ja) * 2002-03-11 2003-09-19 Matsushita Electric Ind Co Ltd 真空処理装置
JP2006269556A (ja) 2005-03-22 2006-10-05 Elpida Memory Inc プラズマ処理装置、及び半導体装置の製造方法
WO2009144938A1 (ja) * 2008-05-30 2009-12-03 パナソニック株式会社 プラズマ処理装置および方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW334609B (en) * 1996-09-19 1998-06-21 Hitachi Ltd Electrostatic chuck, method and device for processing sanyle use the same
JP4035225B2 (ja) * 1998-03-20 2008-01-16 株式会社日立製作所 プラズマ処理方法
JP2006135081A (ja) * 2004-11-05 2006-05-25 Matsushita Electric Ind Co Ltd 基板処理方法及び基板処理装置
US7608544B2 (en) * 2006-05-25 2009-10-27 Tokyo Electron Limited Etching method and storage medium
JP4847909B2 (ja) * 2007-03-29 2011-12-28 東京エレクトロン株式会社 プラズマ処理方法及び装置
KR101125430B1 (ko) * 2009-09-04 2012-03-28 주식회사 디엠에스 피처리물의 디척킹과 함께 반응 챔버 내부 및 정전 척의 드라이 클리닝을 실행하는 플라즈마 반응기의 피처리물 디척킹 장치 및 방법
JP5973840B2 (ja) 2011-12-20 2016-08-23 東京エレクトロン株式会社 離脱制御方法及びプラズマ処理装置
JP5497091B2 (ja) * 2012-03-26 2014-05-21 東京エレクトロン株式会社 基板処理方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002222799A (ja) * 2001-01-25 2002-08-09 Tokyo Electron Ltd プラズマ処理装置およびそのクリーニング方法および静電チャックの除電方法
JP2003264224A (ja) * 2002-03-11 2003-09-19 Matsushita Electric Ind Co Ltd 真空処理装置
JP2006269556A (ja) 2005-03-22 2006-10-05 Elpida Memory Inc プラズマ処理装置、及び半導体装置の製造方法
WO2009144938A1 (ja) * 2008-05-30 2009-12-03 パナソニック株式会社 プラズマ処理装置および方法

Also Published As

Publication number Publication date
US20150132967A1 (en) 2015-05-14
JP2015095396A (ja) 2015-05-18
JP6401901B2 (ja) 2018-10-10
TW201539571A (zh) 2015-10-16
KR20150055549A (ko) 2015-05-21
US9530657B2 (en) 2016-12-27
TWI660421B (zh) 2019-05-21

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