TWI660421B - 基板處理方法及基板處理裝置 - Google Patents

基板處理方法及基板處理裝置 Download PDF

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Publication number
TWI660421B
TWI660421B TW103139277A TW103139277A TWI660421B TW I660421 B TWI660421 B TW I660421B TW 103139277 A TW103139277 A TW 103139277A TW 103139277 A TW103139277 A TW 103139277A TW I660421 B TWI660421 B TW I660421B
Authority
TW
Taiwan
Prior art keywords
substrate
procedure
voltage
electrode
processing
Prior art date
Application number
TW103139277A
Other languages
English (en)
Chinese (zh)
Other versions
TW201539571A (zh
Inventor
Masafumi Urakawa
浦川理史
Rui Takahashi
高橋塁
Masahiro Ogasawara
小笠原正宏
Original Assignee
Tokyo Electron Limited
東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited, 東京威力科創股份有限公司 filed Critical Tokyo Electron Limited
Publication of TW201539571A publication Critical patent/TW201539571A/zh
Application granted granted Critical
Publication of TWI660421B publication Critical patent/TWI660421B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Plasma Technology (AREA)
TW103139277A 2013-11-13 2014-11-12 基板處理方法及基板處理裝置 TWI660421B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013234871A JP6401901B2 (ja) 2013-11-13 2013-11-13 基板処理方法及び基板処理装置
JP2013-234871 2013-11-13

Publications (2)

Publication Number Publication Date
TW201539571A TW201539571A (zh) 2015-10-16
TWI660421B true TWI660421B (zh) 2019-05-21

Family

ID=53044148

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103139277A TWI660421B (zh) 2013-11-13 2014-11-12 基板處理方法及基板處理裝置

Country Status (4)

Country Link
US (1) US9530657B2 (https=)
JP (1) JP6401901B2 (https=)
KR (1) KR102332028B1 (https=)
TW (1) TWI660421B (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101842124B1 (ko) 2016-05-27 2018-03-27 세메스 주식회사 지지 유닛, 기판 처리 장치 및 기판 처리 방법
JP6789099B2 (ja) * 2016-12-26 2020-11-25 東京エレクトロン株式会社 計測方法、除電方法及びプラズマ処理装置
JP6739326B2 (ja) * 2016-12-27 2020-08-12 三菱電機株式会社 評価装置及び評価方法
US10950483B2 (en) * 2017-11-28 2021-03-16 Taiwan Semiconductor Manufacturing Co., Ltd. Systems and methods for fixed focus ring processing
CN111937132A (zh) * 2018-04-04 2020-11-13 朗姆研究公司 带密封表面的静电卡盘
JP7020311B2 (ja) * 2018-06-14 2022-02-16 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP7169920B2 (ja) * 2019-03-26 2022-11-11 東京エレクトロン株式会社 静電吸着装置及び除電方法
KR102299888B1 (ko) * 2019-10-11 2021-09-08 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
TWI775083B (zh) * 2020-05-26 2022-08-21 毅力科技有限公司 真空壓膜系統及真空壓膜方法
JP7515327B2 (ja) 2020-07-13 2024-07-12 東京エレクトロン株式会社 基板離脱方法及びプラズマ処理装置
JP7578360B2 (ja) * 2020-12-22 2024-11-06 東京エレクトロン株式会社 除電方法及びプラズマ処理システム
US20250308967A1 (en) * 2024-03-26 2025-10-02 Applied Materials, Inc. Chucking sensor using floating esc power supplies

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110056514A1 (en) * 2009-09-04 2011-03-10 Lee Byoungil Workpiece de-chucking device of plasma reactor for dry-cleaning inside of reaction chamber and electrostatic chuck during workpiece de-chucking, and workpiece de-chucking method using the same
JP2013149935A (ja) * 2011-12-20 2013-08-01 Tokyo Electron Ltd 離脱制御方法及びプラズマ処理装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW334609B (en) * 1996-09-19 1998-06-21 Hitachi Ltd Electrostatic chuck, method and device for processing sanyle use the same
JP4035225B2 (ja) * 1998-03-20 2008-01-16 株式会社日立製作所 プラズマ処理方法
JP4493863B2 (ja) * 2001-01-25 2010-06-30 東京エレクトロン株式会社 プラズマ処理装置およびそのクリーニング方法および静電チャックの除電方法
JP2003264224A (ja) * 2002-03-11 2003-09-19 Matsushita Electric Ind Co Ltd 真空処理装置
JP2006135081A (ja) * 2004-11-05 2006-05-25 Matsushita Electric Ind Co Ltd 基板処理方法及び基板処理装置
JP2006269556A (ja) * 2005-03-22 2006-10-05 Elpida Memory Inc プラズマ処理装置、及び半導体装置の製造方法
US7608544B2 (en) * 2006-05-25 2009-10-27 Tokyo Electron Limited Etching method and storage medium
JP4847909B2 (ja) * 2007-03-29 2011-12-28 東京エレクトロン株式会社 プラズマ処理方法及び装置
TW201005825A (en) * 2008-05-30 2010-02-01 Panasonic Corp Plasma processing apparatus and method
JP5497091B2 (ja) * 2012-03-26 2014-05-21 東京エレクトロン株式会社 基板処理方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110056514A1 (en) * 2009-09-04 2011-03-10 Lee Byoungil Workpiece de-chucking device of plasma reactor for dry-cleaning inside of reaction chamber and electrostatic chuck during workpiece de-chucking, and workpiece de-chucking method using the same
JP2013149935A (ja) * 2011-12-20 2013-08-01 Tokyo Electron Ltd 離脱制御方法及びプラズマ処理装置

Also Published As

Publication number Publication date
US20150132967A1 (en) 2015-05-14
KR102332028B1 (ko) 2021-11-26
JP2015095396A (ja) 2015-05-18
JP6401901B2 (ja) 2018-10-10
TW201539571A (zh) 2015-10-16
KR20150055549A (ko) 2015-05-21
US9530657B2 (en) 2016-12-27

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