KR102330318B1 - 스퍼터 성막 장치 및 스퍼터 성막 방법 - Google Patents

스퍼터 성막 장치 및 스퍼터 성막 방법 Download PDF

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Publication number
KR102330318B1
KR102330318B1 KR1020180086178A KR20180086178A KR102330318B1 KR 102330318 B1 KR102330318 B1 KR 102330318B1 KR 1020180086178 A KR1020180086178 A KR 1020180086178A KR 20180086178 A KR20180086178 A KR 20180086178A KR 102330318 B1 KR102330318 B1 KR 102330318B1
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KR
South Korea
Prior art keywords
target
film
target unit
negative
positive
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KR1020180086178A
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English (en)
Korean (ko)
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KR20190078468A (ko
Inventor
아라타 와타베
타카시 타케미
Original Assignee
캐논 톡키 가부시키가이샤
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Publication of KR20190078468A publication Critical patent/KR20190078468A/ko
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Publication of KR102330318B1 publication Critical patent/KR102330318B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Plasma Technology (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020180086178A 2017-12-26 2018-07-24 스퍼터 성막 장치 및 스퍼터 성막 방법 KR102330318B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2017-249664 2017-12-26
JP2017249664A JP6657535B2 (ja) 2017-12-26 2017-12-26 スパッタ成膜装置およびスパッタ成膜方法

Publications (2)

Publication Number Publication Date
KR20190078468A KR20190078468A (ko) 2019-07-04
KR102330318B1 true KR102330318B1 (ko) 2021-11-22

Family

ID=67023202

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KR1020180086178A KR102330318B1 (ko) 2017-12-26 2018-07-24 스퍼터 성막 장치 및 스퍼터 성막 방법

Country Status (3)

Country Link
JP (1) JP6657535B2 (zh)
KR (1) KR102330318B1 (zh)
CN (1) CN109957773B (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111893441A (zh) * 2019-05-06 2020-11-06 领凡新能源科技(北京)有限公司 膜层的制备方法和反应腔室
JP2021095609A (ja) * 2019-12-18 2021-06-24 キヤノントッキ株式会社 成膜装置、成膜方法及び電子デバイスの製造方法
JP7344929B2 (ja) * 2021-06-14 2023-09-14 キヤノントッキ株式会社 成膜装置、成膜方法、及び電子デバイスの製造方法
WO2024219132A1 (ja) * 2023-04-17 2024-10-24 株式会社ジャパンディスプレイ 成膜方法、スパッタ装置、およびロータリターゲット

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002529600A (ja) * 1998-11-06 2002-09-10 シヴァク 高レート・コーティング用のスパッタリング装置および方法
JP2009284732A (ja) * 2008-05-26 2009-12-03 Ulvac Japan Ltd バイポーラパルス電源及び複数のバイポーラパルス電源からなる電源装置
JP2012092410A (ja) 2010-10-28 2012-05-17 Nippon Electric Glass Co Ltd 多層膜の製造方法
JP2017521560A (ja) * 2014-07-09 2017-08-03 ソレラス・アドヴァンスト・コーティングス・ビーヴイビーエー 移動ターゲットを有するスパッタ装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3344318B2 (ja) * 1998-05-27 2002-11-11 日本電気株式会社 スパッタ装置
JP2001003166A (ja) * 1999-04-23 2001-01-09 Nippon Sheet Glass Co Ltd 基体表面に被膜を被覆する方法およびその方法による基体
JP2001200357A (ja) * 2000-01-19 2001-07-24 Nippon Sheet Glass Co Ltd 成膜装置と成膜方法
JP2007162100A (ja) * 2005-12-15 2007-06-28 Asahi Glass Co Ltd スパッタリング成膜方法
US20160002770A1 (en) * 2013-02-25 2016-01-07 Fabio PIERALISI Apparatus with neighboring sputter cathodes and method of operation thereof
US20180312964A1 (en) * 2015-06-16 2018-11-01 Schneider Gmbh & Co. Kg Device, method and use for the coating of lenses
JP2017066427A (ja) 2015-09-28 2017-04-06 株式会社Ｓｃｒｅｅｎホールディングス 成膜装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002529600A (ja) * 1998-11-06 2002-09-10 シヴァク 高レート・コーティング用のスパッタリング装置および方法
JP2009284732A (ja) * 2008-05-26 2009-12-03 Ulvac Japan Ltd バイポーラパルス電源及び複数のバイポーラパルス電源からなる電源装置
JP2012092410A (ja) 2010-10-28 2012-05-17 Nippon Electric Glass Co Ltd 多層膜の製造方法
JP2017521560A (ja) * 2014-07-09 2017-08-03 ソレラス・アドヴァンスト・コーティングス・ビーヴイビーエー 移動ターゲットを有するスパッタ装置

Also Published As

Publication number Publication date
KR20190078468A (ko) 2019-07-04
CN109957773B (zh) 2023-12-26
CN109957773A (zh) 2019-07-02
JP2019116644A (ja) 2019-07-18
JP6657535B2 (ja) 2020-03-04

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