KR102318462B1 - 고체 촬상 소자 및 그 제조 방법, 및 전자 기기 - Google Patents

고체 촬상 소자 및 그 제조 방법, 및 전자 기기 Download PDF

Info

Publication number
KR102318462B1
KR102318462B1 KR1020167009789A KR20167009789A KR102318462B1 KR 102318462 B1 KR102318462 B1 KR 102318462B1 KR 1020167009789 A KR1020167009789 A KR 1020167009789A KR 20167009789 A KR20167009789 A KR 20167009789A KR 102318462 B1 KR102318462 B1 KR 102318462B1
Authority
KR
South Korea
Prior art keywords
charge
transfer transistor
unit
gate electrode
photoelectric conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020167009789A
Other languages
English (en)
Korean (ko)
Other versions
KR20160077055A (ko
Inventor
타이이치로 와타나베
후미히코 코가
Original Assignee
소니 세미컨덕터 솔루션즈 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 소니 세미컨덕터 솔루션즈 가부시키가이샤 filed Critical 소니 세미컨덕터 솔루션즈 가부시키가이샤
Priority to KR1020217033619A priority Critical patent/KR102499590B1/ko
Publication of KR20160077055A publication Critical patent/KR20160077055A/ko
Application granted granted Critical
Publication of KR102318462B1 publication Critical patent/KR102318462B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H01L27/14614—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H01L27/1464—
    • H01L27/14641—
    • H01L27/14687—
    • H01L27/14689—
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020167009789A 2013-10-23 2014-10-14 고체 촬상 소자 및 그 제조 방법, 및 전자 기기 Expired - Fee Related KR102318462B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020217033619A KR102499590B1 (ko) 2013-10-23 2014-10-14 고체 촬상 소자 및 그 제조 방법, 및 전자 기기

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013220141A JP6138661B2 (ja) 2013-10-23 2013-10-23 固体撮像素子およびその製造方法、並びに電子機器
JPJP-P-2013-220141 2013-10-23
PCT/JP2014/005203 WO2015059898A1 (en) 2013-10-23 2014-10-14 Solid state imaging device and manufacturing method therefor, and electronic apparatus

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020217033619A Division KR102499590B1 (ko) 2013-10-23 2014-10-14 고체 촬상 소자 및 그 제조 방법, 및 전자 기기

Publications (2)

Publication Number Publication Date
KR20160077055A KR20160077055A (ko) 2016-07-01
KR102318462B1 true KR102318462B1 (ko) 2021-10-28

Family

ID=51862495

Family Applications (4)

Application Number Title Priority Date Filing Date
KR1020167009789A Expired - Fee Related KR102318462B1 (ko) 2013-10-23 2014-10-14 고체 촬상 소자 및 그 제조 방법, 및 전자 기기
KR1020247004618A Pending KR20240023207A (ko) 2013-10-23 2014-10-14 고체 촬상 소자 및 그 제조 방법, 및 전자 기기
KR1020237004308A Pending KR20230025932A (ko) 2013-10-23 2014-10-14 고체 촬상 소자 및 그 제조 방법, 및 전자 기기
KR1020217033619A Active KR102499590B1 (ko) 2013-10-23 2014-10-14 고체 촬상 소자 및 그 제조 방법, 및 전자 기기

Family Applications After (3)

Application Number Title Priority Date Filing Date
KR1020247004618A Pending KR20240023207A (ko) 2013-10-23 2014-10-14 고체 촬상 소자 및 그 제조 방법, 및 전자 기기
KR1020237004308A Pending KR20230025932A (ko) 2013-10-23 2014-10-14 고체 촬상 소자 및 그 제조 방법, 및 전자 기기
KR1020217033619A Active KR102499590B1 (ko) 2013-10-23 2014-10-14 고체 촬상 소자 및 그 제조 방법, 및 전자 기기

Country Status (5)

Country Link
US (1) US9985068B2 (enExample)
JP (1) JP6138661B2 (enExample)
KR (4) KR102318462B1 (enExample)
TW (1) TWI645551B (enExample)
WO (1) WO2015059898A1 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6706481B2 (ja) * 2015-11-05 2020-06-10 ソニーセミコンダクタソリューションズ株式会社 撮像素子
KR102416046B1 (ko) * 2016-07-06 2022-07-04 소니 세미컨덕터 솔루션즈 가부시키가이샤 촬상 소자, 촬상 소자의 제조 방법, 및, 전자 기기
IT201600083804A1 (it) * 2016-08-09 2018-02-09 St Microelectronics Srl Procedimento di fabbricazione di un dispositivo a semiconduttore includente una struttura microelettromeccanica ed un associato circuito elettronico integrato e relativo dispositivo a semiconduttore
CN109863600B (zh) * 2016-11-02 2023-06-20 索尼半导体解决方案公司 成像器件、成像装置以及电子设备
FR3060250B1 (fr) * 2016-12-12 2019-08-23 Commissariat A L'energie Atomique Et Aux Energies Alternatives Capteur d'image pour capter une image en 2d et une profondeur
KR102662585B1 (ko) 2017-01-09 2024-04-30 삼성전자주식회사 이미지 센서
KR102473149B1 (ko) 2017-11-13 2022-12-02 에스케이하이닉스 주식회사 이미지 센서
WO2019202858A1 (ja) * 2018-04-16 2019-10-24 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像素子の製造方法
KR102446297B1 (ko) * 2018-05-02 2022-09-23 에스케이하이닉스 주식회사 엑스트라 트랜스퍼 트랜지스터 및 엑스트라 플로팅 디퓨전 영역을 포함하는 이미지 센서
WO2020022054A1 (ja) * 2018-07-24 2020-01-30 ソニーセミコンダクタソリューションズ株式会社 撮像装置、電子機器
TWI840384B (zh) * 2018-07-31 2024-05-01 日商索尼半導體解決方案公司 攝像裝置及電子機器
US10566359B1 (en) * 2018-08-22 2020-02-18 Omnivision Technologies, Inc. Variably biased isolation structure for global shutter pixel storage node
JP2020035916A (ja) 2018-08-30 2020-03-05 ソニーセミコンダクタソリューションズ株式会社 撮像装置および電子機器
JP7280034B2 (ja) * 2018-12-03 2023-05-23 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、固体撮像素子の製造方法、および電子機器
KR102560775B1 (ko) * 2018-12-20 2023-07-28 삼성전자주식회사 이미지 센서
KR102679205B1 (ko) 2019-07-02 2024-06-28 에스케이하이닉스 주식회사 이미지 센싱 장치
JP2021019171A (ja) * 2019-07-24 2021-02-15 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および電子機器
TWI865651B (zh) * 2019-11-18 2024-12-11 日商索尼半導體解決方案公司 固體攝像裝置及電子機器
CN114830337A (zh) * 2019-12-25 2022-07-29 索尼半导体解决方案公司 光接收元件和光接收装置
WO2021235101A1 (ja) * 2020-05-20 2021-11-25 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置
EP4261900B1 (en) * 2020-12-11 2025-10-08 Sony Semiconductor Solutions Corporation Light-receiving element, light-receiving device, and electronic apparatus
JP7626687B2 (ja) * 2021-08-19 2025-02-04 株式会社ジャパンディスプレイ 検出装置
JP2024123906A (ja) * 2023-03-02 2024-09-12 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010016114A (ja) * 2008-07-02 2010-01-21 Sony Corp 固体撮像装置とその製造方法、及び電子機器
JP2011082330A (ja) * 2009-10-07 2011-04-21 Sony Corp 固体撮像装置、撮像装置、および固体撮像装置の製造方法
WO2013088983A1 (ja) * 2011-12-12 2013-06-20 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法及び電子機器

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8445944B2 (en) * 2004-02-04 2013-05-21 Sony Corporation Solid-state image pickup device
JP4341421B2 (ja) * 2004-02-04 2009-10-07 ソニー株式会社 固体撮像装置
JP2006311515A (ja) * 2005-03-29 2006-11-09 Konica Minolta Holdings Inc 固体撮像装置
US8289427B2 (en) 2006-11-30 2012-10-16 National University Corporation Shizuoka University Semiconductor range-finding element and solid-state imaging device
JP5568880B2 (ja) 2008-04-03 2014-08-13 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法および電子機器
EP2133918B1 (en) * 2008-06-09 2015-01-28 Sony Corporation Solid-state imaging device, drive method thereof and electronic apparatus
JP5401928B2 (ja) * 2008-11-06 2014-01-29 ソニー株式会社 固体撮像装置、及び電子機器
TWI445166B (zh) * 2008-11-07 2014-07-11 Sony Corp 固態成像裝置，製造固態成像裝置之方法、及電子設備
JP5552768B2 (ja) * 2009-07-27 2014-07-16 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP2011159756A (ja) * 2010-01-29 2011-08-18 Sony Corp 固体撮像装置とその製造方法、及び電子機器
JP5581954B2 (ja) * 2010-10-07 2014-09-03 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法、及び電子機器
US9570489B2 (en) * 2011-07-12 2017-02-14 Sony Corporation Solid state imaging device having impurity concentration on light receiving surface being greater or equal to that on opposing surface
JP2013098446A (ja) * 2011-11-04 2013-05-20 Sony Corp 固体撮像素子、固体撮像素子の製造方法、及び、電子機器
KR101968197B1 (ko) * 2012-05-18 2019-04-12 삼성전자주식회사 이미지 센서 및 이의 형성 방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010016114A (ja) * 2008-07-02 2010-01-21 Sony Corp 固体撮像装置とその製造方法、及び電子機器
JP2011082330A (ja) * 2009-10-07 2011-04-21 Sony Corp 固体撮像装置、撮像装置、および固体撮像装置の製造方法
WO2013088983A1 (ja) * 2011-12-12 2013-06-20 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法及び電子機器

Also Published As

Publication number Publication date
KR20160077055A (ko) 2016-07-01
KR102499590B1 (ko) 2023-02-14
TWI645551B (zh) 2018-12-21
KR20210130248A (ko) 2021-10-29
JP2015082592A (ja) 2015-04-27
KR20230025932A (ko) 2023-02-23
TW201523853A (zh) 2015-06-16
KR20240023207A (ko) 2024-02-20
US9985068B2 (en) 2018-05-29
WO2015059898A1 (en) 2015-04-30
JP6138661B2 (ja) 2017-05-31
US20160268322A1 (en) 2016-09-15

Similar Documents

Publication Publication Date Title
KR102318462B1 (ko) 고체 촬상 소자 및 그 제조 방법, 및 전자 기기
US12068352B2 (en) Solid-state imaging device, with transfer transistor gate electrode having trench gate sections
US11570388B2 (en) Solid-state imaging device and driving method thereof, and electronic apparatus
US20210335875A1 (en) Solid-state imaging element, manufacturing method, and electronic device
CN104981906B (zh) 固态图像传感器、其制造方法和电子设备
JP5326507B2 (ja) 固体撮像装置、固体撮像装置の駆動方法、及び電子機器
JP2009253149A (ja) 光電変換装置及びそれを用いた撮像システム
JP2015023250A (ja) 固体撮像素子及びその駆動方法、並びに電子機器
CN116802811A (zh) 摄像元件和摄像装置
CN110729317A (zh) 固态成像装置，制造固态成像装置的方法和电子设备
US20150122971A1 (en) 3d stacked image sensor
JP2017103429A (ja) 撮像装置、および、撮像システム
JP2013251559A (ja) 光電変換装置及びそれを用いた撮像システム

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

N231 Notification of change of applicant
PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A18-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20241023

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

H13 Ip right lapsed

Free format text: ST27 STATUS EVENT CODE: N-4-6-H10-H13-OTH-PC1903 (AS PROVIDED BY THE NATIONAL OFFICE); TERMINATION CATEGORY : DEFAULT_OF_REGISTRATION_FEE

Effective date: 20241023

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20241023