KR102304574B1 - 세장형 절삭 에지를 갖는 화학 기계 평탄화 패드 컨디셔너 - Google Patents

세장형 절삭 에지를 갖는 화학 기계 평탄화 패드 컨디셔너 Download PDF

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KR102304574B1
KR102304574B1 KR1020167029446A KR20167029446A KR102304574B1 KR 102304574 B1 KR102304574 B1 KR 102304574B1 KR 1020167029446 A KR1020167029446 A KR 1020167029446A KR 20167029446 A KR20167029446 A KR 20167029446A KR 102304574 B1 KR102304574 B1 KR 102304574B1
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South Korea
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delete delete
elongate
protrusions
cmp
conditioning
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Korean (ko)
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KR20160136404A (ko
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앤드루 갤핀
대니얼 웰스
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엔테그리스, 아이엔씨.
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • H10P52/00—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D5/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting only by their periphery; Bushings or mountings therefor
    • B24D5/06—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting only by their periphery; Bushings or mountings therefor with inserted abrasive blocks, e.g. segmental
    • H10P52/402—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/12—Dressing tools; Holders therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D2203/00—Tool surfaces formed with a pattern
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020167029446A 2014-03-21 2015-03-20 세장형 절삭 에지를 갖는 화학 기계 평탄화 패드 컨디셔너 Active KR102304574B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201461968846P 2014-03-21 2014-03-21
US61/968,846 2014-03-21
PCT/US2015/021679 WO2015143278A1 (en) 2014-03-21 2015-03-20 Chemical mechanical planarization pad conditioner with elongated cutting edges

Publications (2)

Publication Number Publication Date
KR20160136404A KR20160136404A (ko) 2016-11-29
KR102304574B1 true KR102304574B1 (ko) 2021-09-27

Family

ID=54145367

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167029446A Active KR102304574B1 (ko) 2014-03-21 2015-03-20 세장형 절삭 에지를 갖는 화학 기계 평탄화 패드 컨디셔너

Country Status (6)

Country Link
US (1) US10293463B2 (enExample)
JP (1) JP6542793B2 (enExample)
KR (1) KR102304574B1 (enExample)
CN (1) CN106463379B (enExample)
TW (1) TWI666091B (enExample)
WO (1) WO2015143278A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10105812B2 (en) * 2014-07-17 2018-10-23 Applied Materials, Inc. Polishing pad configuration and polishing pad support
CN108472789B (zh) * 2016-01-08 2020-06-05 阪东化学株式会社 研磨材
KR102365066B1 (ko) * 2016-04-06 2022-02-18 엠 큐브드 테크놀로지스 다이아몬드 복합 cmp 패드 조절기
US10471567B2 (en) 2016-09-15 2019-11-12 Entegris, Inc. CMP pad conditioning assembly
US20180085891A1 (en) * 2016-09-29 2018-03-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Apparatus for shaping the surface of chemical mechanical polishing pads
TWI621503B (zh) * 2017-05-12 2018-04-21 Kinik Company Ltd. 化學機械研磨拋光墊修整器及其製造方法
US20190351527A1 (en) * 2018-05-17 2019-11-21 Entegris, Inc. Conditioner for chemical-mechanical-planarization pad and related methods
US12208487B2 (en) 2018-10-29 2025-01-28 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical mechanical polishing apparatus and method
US11331767B2 (en) * 2019-02-01 2022-05-17 Micron Technology, Inc. Pads for chemical mechanical planarization tools, chemical mechanical planarization tools, and related methods
SG11202108831UA (en) * 2019-02-13 2021-09-29 3M Innovative Properties Co Abrasive elements with precisely shaped features, abrasive articles fabricated therefrom and methods of making thereof
WO2020210311A1 (en) * 2019-04-09 2020-10-15 Entegris, Inc Segment designs for discs
US11524385B2 (en) * 2019-06-07 2022-12-13 Rohm And Haas Electronic Materials Cmp Holdings, Inc. CMP polishing pad with lobed protruding structures
GB2590511B (en) * 2019-11-20 2023-10-25 Best Engineered Surface Tech Llc Hybrid CMP conditioning head
US12370648B2 (en) * 2020-01-30 2025-07-29 Taiwan Semiconductor Manufacturing Co., Ltd. Surface clean system and method
US11833638B2 (en) * 2020-03-25 2023-12-05 Rohm and Haas Electronic Materials Holding, Inc. CMP polishing pad with polishing elements on supports
JP2024535447A (ja) * 2021-09-29 2024-09-30 インテグリス・インコーポレーテッド 両面パッドコンディショナー

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001157967A (ja) 1999-11-29 2001-06-12 Mitsubishi Materials Corp 単層砥石
JP2009241200A (ja) * 2008-03-31 2009-10-22 Mitsubishi Materials Corp Ｃｍｐコンディショナ
WO2012122186A2 (en) 2011-03-07 2012-09-13 Entegris, Inc. Chemical mechanical planarization pad conditioner

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5527424A (en) * 1995-01-30 1996-06-18 Motorola, Inc. Preconditioner for a polishing pad and method for using the same
US6302770B1 (en) * 1998-07-28 2001-10-16 Nikon Research Corporation Of America In-situ pad conditioning for CMP polisher
KR100387954B1 (ko) 1999-10-12 2003-06-19 (주) 휴네텍 연마패드용 컨디셔너와 이의 제조방법
TW467802B (en) 1999-10-12 2001-12-11 Hunatech Co Ltd Conditioner for polishing pad and method for manufacturing the same
US6390909B2 (en) * 2000-04-03 2002-05-21 Rodel Holdings, Inc. Disk for conditioning polishing pads
JP2002337050A (ja) 2001-03-13 2002-11-26 Mitsubishi Materials Corp Ｃｍｐコンディショナ
AU2003284410A1 (en) 2002-11-19 2004-06-15 Ishikawa Seisakusho, Ltd. Pixel control element selection transfer method, pixel control element mounting device used for pixel control element selection transfer method, wiring formation method after pixel control element transfer, and planar display substrate
AU2003236288A1 (en) * 2003-01-15 2004-08-10 Mitsubishi Materials Corporation Cutting tool for soft material
US7367872B2 (en) * 2003-04-08 2008-05-06 Applied Materials, Inc. Conditioner disk for use in chemical mechanical polishing
CN1938128A (zh) 2004-03-31 2007-03-28 三菱综合材料株式会社 Cmp调节器
US7799375B2 (en) 2004-06-30 2010-09-21 Poco Graphite, Inc. Process for the manufacturing of dense silicon carbide
JP4145273B2 (ja) 2004-07-14 2008-09-03 株式会社ノリタケスーパーアブレーシブ Ｃｍｐパッドコンディショナー
US7066795B2 (en) * 2004-10-12 2006-06-27 Applied Materials, Inc. Polishing pad conditioner with shaped abrasive patterns and channels
CA2620407A1 (en) * 2005-08-25 2007-03-01 Hiroshi Ishizuka Tool with sintered body polishing surface and method of manufacturing the same
US7300338B2 (en) 2005-09-22 2007-11-27 Abrasive Technology, Inc. CMP diamond conditioning disk
TW200726582A (en) * 2005-10-04 2007-07-16 Mitsubishi Materials Corp Rotary tool for processing flexible materials
JP4441552B2 (ja) 2006-07-31 2010-03-31 メゾテクダイヤ株式会社 ダイヤモンドコンディショナ
US20170232576A1 (en) * 2006-11-16 2017-08-17 Chien-Min Sung Cmp pad conditioners with mosaic abrasive segments and associated methods
US20080153398A1 (en) * 2006-11-16 2008-06-26 Chien-Min Sung Cmp pad conditioners and associated methods
JP2008229820A (ja) * 2007-03-23 2008-10-02 Elpida Memory Inc Ｃｍｐ加工用のドレッサ及びｃｍｐ加工装置並びにｃｍｐ加工用の研磨パッドのドレッシング処理方法
KR20100106328A (ko) * 2007-11-13 2010-10-01 치엔 민 성 Ｃｍｐ 패드 드레서
US8951099B2 (en) * 2009-09-01 2015-02-10 Saint-Gobain Abrasives, Inc. Chemical mechanical polishing conditioner
KR101091030B1 (ko) * 2010-04-08 2011-12-09 이화다이아몬드공업 주식회사 감소된 마찰력을 갖는 패드 컨디셔너 제조방법
JP5871904B2 (ja) 2010-04-12 2016-03-01 イコニクス コーポレーションＩｋｏｎｉｃｓ Ｃｏｒｐｏｒａｔｉｏｎ アブレシブエッチングおよびカッティングのためのフォトレジスト膜および方法
CN101972995B (zh) 2010-06-08 2013-05-01 沈阳理工大学 一种仿生表面结构抛光垫及制造方法
KR101211138B1 (ko) 2011-03-07 2012-12-11 이화다이아몬드공업 주식회사 연약패드용 컨디셔너 및 그 제조방법
KR101144981B1 (ko) 2011-05-17 2012-05-11 삼성전자주식회사 Ｃｍｐ 패드 컨디셔너 및 상기 ｃｍｐ 패드 컨디셔너 제조방법
KR102168330B1 (ko) 2012-05-04 2020-10-22 엔테그리스, 아이엔씨. 초연마 그리트 개선을 갖는 cmp 컨디셔너 패드
TWI564116B (zh) * 2013-08-12 2017-01-01 Sapphire polishing pad dresser with multiple trimmed pellets

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001157967A (ja) 1999-11-29 2001-06-12 Mitsubishi Materials Corp 単層砥石
JP2009241200A (ja) * 2008-03-31 2009-10-22 Mitsubishi Materials Corp Ｃｍｐコンディショナ
WO2012122186A2 (en) 2011-03-07 2012-09-13 Entegris, Inc. Chemical mechanical planarization pad conditioner

Also Published As

Publication number Publication date
KR20160136404A (ko) 2016-11-29
US20170095903A1 (en) 2017-04-06
CN106463379A (zh) 2017-02-22
TWI666091B (zh) 2019-07-21
TW201600241A (zh) 2016-01-01
US10293463B2 (en) 2019-05-21
CN106463379B (zh) 2019-08-06
WO2015143278A1 (en) 2015-09-24
JP6542793B2 (ja) 2019-07-10
JP2017509500A (ja) 2017-04-06

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