KR102299959B1 - 반도체 발광 소자 - Google Patents

반도체 발광 소자 Download PDF

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Publication number
KR102299959B1
KR102299959B1 KR1020140180116A KR20140180116A KR102299959B1 KR 102299959 B1 KR102299959 B1 KR 102299959B1 KR 1020140180116 A KR1020140180116 A KR 1020140180116A KR 20140180116 A KR20140180116 A KR 20140180116A KR 102299959 B1 KR102299959 B1 KR 102299959B1
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electrode
type semiconductor
semiconductor layer
insulating film
light emitting
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Korean (ko)
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KR20150072344A (ko
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마사히코 사노
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니치아 카가쿠 고교 가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

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KR1020140180116A 2013-12-19 2014-12-15 반도체 발광 소자 Active KR102299959B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2013-262438 2013-12-19
JP2013262438 2013-12-19

Publications (2)

Publication Number Publication Date
KR20150072344A KR20150072344A (ko) 2015-06-29
KR102299959B1 true KR102299959B1 (ko) 2021-09-09

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KR1020140180116A Active KR102299959B1 (ko) 2013-12-19 2014-12-15 반도체 발광 소자

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Country Link
US (2) US9123865B2 (https=)
EP (1) EP2887408B1 (https=)
JP (2) JP6485019B2 (https=)
KR (1) KR102299959B1 (https=)
CN (1) CN104733599B (https=)
AU (1) AU2014277727B2 (https=)
TW (1) TWI649898B (https=)

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US9847457B2 (en) 2013-07-29 2017-12-19 Seoul Viosys Co., Ltd. Light emitting diode, method of fabricating the same and LED module having the same
KR102409964B1 (ko) * 2015-08-04 2022-06-16 삼성전자주식회사 반도체 발광소자 및 제조방법
KR20170018201A (ko) * 2015-08-06 2017-02-16 삼성전자주식회사 반도체 발광소자 및 제조방법
US9530934B1 (en) * 2015-12-22 2016-12-27 Epistar Corporation Light-emitting device
CN105742418A (zh) * 2016-03-18 2016-07-06 华灿光电股份有限公司 一种发光二极管芯片及其制作方法
DE102016112587A1 (de) 2016-07-08 2018-01-11 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip
KR102707425B1 (ko) * 2017-01-06 2024-09-20 서울바이오시스 주식회사 전류 차단층을 가지는 발광 소자
TWI778010B (zh) * 2017-01-26 2022-09-21 晶元光電股份有限公司 發光元件
US11024770B2 (en) * 2017-09-25 2021-06-01 Nichia Corporation Light emitting element and light emitting device
JP7054430B2 (ja) * 2018-04-26 2022-04-14 日亜化学工業株式会社 発光素子
CN110416381B (zh) * 2018-04-26 2025-04-25 日亚化学工业株式会社 发光元件
DE102018119438A1 (de) * 2018-08-09 2020-02-13 Osram Opto Semiconductors Gmbh Optoelektronischer halbleiterchip, optoelektronisches bauteil und verfahren zur herstellung eines optoelektronischen bauteils
DE102018124341B4 (de) * 2018-10-02 2024-05-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Bauelement mit vergrößerter aktiver Zone und Verfahren zur Herstellung
CN109817781A (zh) * 2019-01-31 2019-05-28 深圳第三代半导体研究院 一种正装集成单元发光二极管
TWD219684S (zh) * 2021-07-09 2022-07-01 晶元光電股份有限公司 發光二極體之部分
JP2025099960A (ja) * 2023-12-22 2025-07-03 セイコーエプソン株式会社 発光装置、電子機器、および発光装置の製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010153870A (ja) 2008-12-24 2010-07-08 Lg Innotek Co Ltd 半導体発光素子
JP2011142308A (ja) 2009-12-08 2011-07-21 Dowa Electronics Materials Co Ltd 発光素子およびその製造方法
US20120049234A1 (en) 2010-08-26 2012-03-01 Huga Optotech Inc. High-brightness light emitting diode
JP2012204373A (ja) 2011-03-23 2012-10-22 Toyoda Gosei Co Ltd 半導体発光素子
JP2012212849A (ja) * 2011-03-23 2012-11-01 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子
US20130175572A1 (en) * 2012-01-11 2013-07-11 Formosa Epitaxy Incorporation Light-emitting diode chip

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KR101095753B1 (ko) 2002-08-01 2011-12-21 니치아 카가쿠 고교 가부시키가이샤 반도체 발광 소자 및 그 제조 방법과 그것을 이용한 발광장치
TWI220578B (en) * 2003-09-16 2004-08-21 Opto Tech Corp Light-emitting device capable of increasing light-emitting active region
JP4449405B2 (ja) * 2003-10-20 2010-04-14 日亜化学工業株式会社 窒化物半導体発光素子およびその製造方法
JP4899825B2 (ja) * 2006-11-28 2012-03-21 日亜化学工業株式会社 半導体発光素子、発光装置
CN102779918B (zh) 2007-02-01 2015-09-02 日亚化学工业株式会社 半导体发光元件
JP4882792B2 (ja) * 2007-02-25 2012-02-22 日亜化学工業株式会社 半導体発光素子
JP5130730B2 (ja) 2007-02-01 2013-01-30 日亜化学工業株式会社 半導体発光素子
DE102007022947B4 (de) * 2007-04-26 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
JP5628615B2 (ja) * 2010-09-27 2014-11-19 スタンレー電気株式会社 半導体発光装置およびその製造方法
TW201216517A (en) * 2010-10-06 2012-04-16 Chi Mei Lighting Tech Corp Light-emitting diode device and manufacturing method thereof
CN105742447B (zh) * 2010-11-18 2019-03-26 首尔伟傲世有限公司 具有电极焊盘的发光二极管
JP5605189B2 (ja) * 2010-11-26 2014-10-15 豊田合成株式会社 半導体発光素子
JP2012124306A (ja) * 2010-12-08 2012-06-28 Toyoda Gosei Co Ltd 半導体発光素子
KR101883842B1 (ko) * 2011-12-26 2018-08-01 엘지이노텍 주식회사 발광소자 및 이를 포함하는 조명시스템

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010153870A (ja) 2008-12-24 2010-07-08 Lg Innotek Co Ltd 半導体発光素子
JP2011142308A (ja) 2009-12-08 2011-07-21 Dowa Electronics Materials Co Ltd 発光素子およびその製造方法
US20120049234A1 (en) 2010-08-26 2012-03-01 Huga Optotech Inc. High-brightness light emitting diode
JP2012204373A (ja) 2011-03-23 2012-10-22 Toyoda Gosei Co Ltd 半導体発光素子
JP2012212849A (ja) * 2011-03-23 2012-11-01 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子
US20130175572A1 (en) * 2012-01-11 2013-07-11 Formosa Epitaxy Incorporation Light-emitting diode chip

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AU2014277727A1 (en) 2015-07-09
EP2887408B1 (en) 2019-11-06
JP2019075591A (ja) 2019-05-16
US9293658B2 (en) 2016-03-22
CN104733599A (zh) 2015-06-24
EP2887408A2 (en) 2015-06-24
US9123865B2 (en) 2015-09-01
US20150325751A1 (en) 2015-11-12
US20150179890A1 (en) 2015-06-25
AU2014277727B2 (en) 2019-04-04
TW201528548A (zh) 2015-07-16
TWI649898B (zh) 2019-02-01
EP2887408A3 (en) 2015-11-04
JP6870695B2 (ja) 2021-05-12
JP2015135951A (ja) 2015-07-27
JP6485019B2 (ja) 2019-03-20
CN104733599B (zh) 2018-12-28
KR20150072344A (ko) 2015-06-29

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