KR102220022B1 - 게이트 절연막, 유기 박막 트랜지스터, 및 유기 박막 트랜지스터의 제조방법 - Google Patents

게이트 절연막, 유기 박막 트랜지스터, 및 유기 박막 트랜지스터의 제조방법 Download PDF

Info

Publication number
KR102220022B1
KR102220022B1 KR1020140110805A KR20140110805A KR102220022B1 KR 102220022 B1 KR102220022 B1 KR 102220022B1 KR 1020140110805 A KR1020140110805 A KR 1020140110805A KR 20140110805 A KR20140110805 A KR 20140110805A KR 102220022 B1 KR102220022 B1 KR 102220022B1
Authority
KR
South Korea
Prior art keywords
gate insulating
insulating film
thin film
organic thin
film transistor
Prior art date
Application number
KR1020140110805A
Other languages
English (en)
Korean (ko)
Other versions
KR20150026873A (ko
Inventor
신야 오쿠
마코토 미즈카미
시즈오 토키토
마사오미 타카노
히로아키 야마다
슈헤이 하야시
Original Assignee
닛테츠 케미컬 앤드 머티리얼 가부시키가이샤
야마가타 유니버시티
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 닛테츠 케미컬 앤드 머티리얼 가부시키가이샤, 야마가타 유니버시티 filed Critical 닛테츠 케미컬 앤드 머티리얼 가부시키가이샤
Publication of KR20150026873A publication Critical patent/KR20150026873A/ko
Application granted granted Critical
Publication of KR102220022B1 publication Critical patent/KR102220022B1/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Thin Film Transistor (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
KR1020140110805A 2013-08-29 2014-08-25 게이트 절연막, 유기 박막 트랜지스터, 및 유기 박막 트랜지스터의 제조방법 KR102220022B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2013-177649 2013-08-29
JP2013177649 2013-08-29
JP2014153920A JP6455008B2 (ja) 2013-08-29 2014-07-29 ゲート絶縁膜、有機薄膜トランジスタ、及び有機薄膜トランジスタの製造方法
JPJP-P-2014-153920 2014-07-29

Publications (2)

Publication Number Publication Date
KR20150026873A KR20150026873A (ko) 2015-03-11
KR102220022B1 true KR102220022B1 (ko) 2021-02-25

Family

ID=52833021

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140110805A KR102220022B1 (ko) 2013-08-29 2014-08-25 게이트 절연막, 유기 박막 트랜지스터, 및 유기 박막 트랜지스터의 제조방법

Country Status (4)

Country Link
JP (1) JP6455008B2 (zh)
KR (1) KR102220022B1 (zh)
CN (1) CN104423154B (zh)
TW (1) TWI645590B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102051906B1 (ko) 2016-06-06 2019-12-04 도레이 카부시키가이샤 메모리 어레이, 메모리 어레이의 제조 방법, 메모리 어레이 시트, 메모리 어레이 시트의 제조 방법 및 무선 통신 장치
US10325991B1 (en) 2017-12-06 2019-06-18 Nanya Technology Corporation Transistor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012195580A (ja) * 2011-03-03 2012-10-11 Mitsubishi Chemicals Corp 電界効果トランジスタのゲート絶縁層用組成物、ゲート絶縁層、電界効果トランジスタ及び表示パネル

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1039503A (ja) * 1996-07-23 1998-02-13 Mitsubishi Chem Corp カラーレジスト組成物
JP2003304014A (ja) 2002-04-08 2003-10-24 Mitsubishi Chemicals Corp 有機電子デバイス及びその作製方法
JP2005023287A (ja) * 2003-07-04 2005-01-27 Nippon Kayaku Co Ltd 金属蒸着用アンダーコート光硬化性樹脂組成物及びその硬化物
JP5255783B2 (ja) * 2006-06-01 2013-08-07 新日鉄住金化学株式会社 カラーフィルター用レジスト組成物及びその製造方法並びにそれを用いたカラーフィルター
JP5200377B2 (ja) 2006-12-28 2013-06-05 大日本印刷株式会社 有機半導体素子
CN101150174A (zh) * 2007-08-31 2008-03-26 电子科技大学 一种有机薄膜晶体管及其制备方法
EP2221666B1 (en) * 2007-11-12 2013-09-18 Hitachi Chemical Company, Ltd. Positive-type photosensitive resin composition, method for production of resist pattern, and semiconductor device
KR20090111517A (ko) * 2008-04-22 2009-10-27 주식회사 동진쎄미켐 저온 경화성 감광성 수지 조성물

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012195580A (ja) * 2011-03-03 2012-10-11 Mitsubishi Chemicals Corp 電界効果トランジスタのゲート絶縁層用組成物、ゲート絶縁層、電界効果トランジスタ及び表示パネル

Also Published As

Publication number Publication date
CN104423154A (zh) 2015-03-18
TW201528573A (zh) 2015-07-16
CN104423154B (zh) 2020-03-10
JP6455008B2 (ja) 2019-01-23
KR20150026873A (ko) 2015-03-11
JP2015065416A (ja) 2015-04-09
TWI645590B (zh) 2018-12-21

Similar Documents

Publication Publication Date Title
JP7013872B2 (ja) 樹脂組成物、硬化膜、半導体装置およびそれらの製造方法
JP5613851B1 (ja) 表示又は照明装置
US11512199B2 (en) Resin composition, resin sheet, cured film, organic el display device, semiconductor electronic component, semiconductor equipment, and method for producing organic el display device
TWI726960B (zh) 膜觸控感測器及其製作方法
US10707079B2 (en) Orthogonal patterning method
JP2017049369A (ja) 感光性組成物、硬化膜の製造方法、液晶表示装置の製造方法、有機エレクトロルミネッセンス表示装置の製造方法、およびタッチパネルの製造方法
JP5652005B2 (ja) 薄膜トランジスタおよびその製造方法、ならびに電子機器
JP2012234748A (ja) 有機ｅｌ表示素子および有機ｅｌ表示素子の製造方法
KR20190087417A (ko) 전계 효과형 트랜지스터, 그의 제조 방법, 그것을 사용한 무선 통신 장치 및 상품 태그
KR20210036908A (ko) 수지 조성물, 수지 시트, 경화막, 경화막의 제조 방법, 반도체 장치 및 표시 장치
TW201348296A (zh) 感放射線性樹脂組成物、絕緣膜及有機ｅｌ元件
KR102220022B1 (ko) 게이트 절연막, 유기 박막 트랜지스터, 및 유기 박막 트랜지스터의 제조방법
WO2019015317A1 (zh) 构图方法和阵列基板的制备方法
KR102165640B1 (ko) 게이트 절연막, 유기 박막 트랜지스터, 및 유기 박막 트랜지스터의 제조방법
CN110800373B (zh) 发光装置、带触摸屏的有机电致发光装置及发光装置的制造方法
TWI573194B (zh) 半導體用絕緣膜及使用其的有機薄膜電晶體
JP5200377B2 (ja) 有機半導体素子
Lee et al. Low-Voltage Organic Transistors with Carrier Mobilities over 10 cm2V–2s–1 Using Six-Branched Organic Azide
JP5574035B2 (ja) インプリント用レジスト組成物
US20170285473A1 (en) Composition for forming interlayer insulating film, interlayer insulating film, method for forming interlayer insulating film pattern, and device
CN107193186B (zh) 图案形成方法
WO2016021501A1 (ja) 感光性樹脂溶液、パターニング膜の形成方法および含フッ素樹脂膜の微細加工方法
JP2022108813A (ja) 保護膜形成用組成物
JP2020187246A (ja) 感放射線性樹脂組成物を用いた電子装置の製造方法、感放射線性樹脂組成物、絶縁膜及び絶縁膜を備えた電子装置
YingtaoXie et al. P‐58: Highly Stable Organic Thin‐Film Transistor array Fabricated on Gorilla Glass Substrates using Direct Photolithography

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right