KR102192195B1 - 솔더 조인트를 갖는 반도체 소자 및 그 형성 방법 - Google Patents

솔더 조인트를 갖는 반도체 소자 및 그 형성 방법 Download PDF

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KR102192195B1
KR102192195B1 KR1020140095964A KR20140095964A KR102192195B1 KR 102192195 B1 KR102192195 B1 KR 102192195B1 KR 1020140095964 A KR1020140095964 A KR 1020140095964A KR 20140095964 A KR20140095964 A KR 20140095964A KR 102192195 B1 KR102192195 B1 KR 102192195B1
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temperature solder
barrier layer
conductive pad
high temperature
solder
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Korean (ko)
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KR20160013737A (ko
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김순범
김태은
박은혜
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삼성전자주식회사
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Priority to KR1020140095964A priority Critical patent/KR102192195B1/ko
Priority to US14/686,775 priority patent/US9646945B2/en
Priority to JP2015136846A priority patent/JP6564261B2/ja
Publication of KR20160013737A publication Critical patent/KR20160013737A/ko
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    • H01L2224/13163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/13181—Tantalum [Ta] as principal constituent
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    • H01L2224/1354—Coating
    • H01L2224/1356—Disposition
    • H01L2224/13563—Only on parts of the surface of the core, i.e. partial coating
    • H01L2224/13565—Only outside the bonding interface of the bump connector
    • H—ELECTRICITY
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    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/1605—Shape
    • H01L2224/16057—Shape in side view
    • H01L2224/16058—Shape in side view being non uniform along the bump connector
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/165—Material
    • H01L2224/16501—Material at the bonding interface
    • H01L2224/16503—Material at the bonding interface comprising an intermetallic compound
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81193—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
    • H01L2224/8181—Soldering or alloying involving forming an intermetallic compound at the bonding interface

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
KR1020140095964A 2014-07-28 2014-07-28 솔더 조인트를 갖는 반도체 소자 및 그 형성 방법 Active KR102192195B1 (ko)

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US14/686,775 US9646945B2 (en) 2014-07-28 2015-04-14 Semiconductor device having solder joint and method of forming the same
JP2015136846A JP6564261B2 (ja) 2014-07-28 2015-07-08 半田ジョイントを有する半導体素子

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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102601553B1 (ko) * 2016-12-08 2023-11-15 삼성전자주식회사 반도체 발광 소자
DE102017104276B4 (de) * 2017-03-01 2020-01-16 Osram Opto Semiconductors Gmbh Verfahren zum Befestigen eines Halbleiterchips auf einem Leiterrahmen und elektronisches Bauelement
US10593638B2 (en) * 2017-03-29 2020-03-17 Xilinx, Inc. Methods of interconnect for high density 2.5D and 3D integration
DE102017108422A1 (de) 2017-04-20 2018-10-25 Osram Opto Semiconductors Gmbh Verfahren zum Befestigen eines Halbleiterchips auf einem Leiterrahmen und elektronisches Bauelement
US10403591B2 (en) * 2017-10-31 2019-09-03 Xilinx, Inc. Chip package assembly with enhanced interconnects and method for fabricating the same
US10811377B2 (en) * 2017-12-14 2020-10-20 Taiwan Semiconductor Manufacturing Co., Ltd. Package structure with a barrier layer and method for forming the same
US10453817B1 (en) * 2018-06-18 2019-10-22 Texas Instruments Incorporated Zinc-cobalt barrier for interface in solder bond applications
US20250149486A1 (en) * 2023-11-03 2025-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor package and method of forming the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013042018A (ja) * 2011-08-18 2013-02-28 Fujitsu Ltd 半導体装置およびその製造方法並びに電子装置

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4739917A (en) * 1987-01-12 1988-04-26 Ford Motor Company Dual solder process for connecting electrically conducting terminals of electrical components to printed circuit conductors
US5251806A (en) * 1990-06-19 1993-10-12 International Business Machines Corporation Method of forming dual height solder interconnections
US5542174A (en) * 1994-09-15 1996-08-06 Intel Corporation Method and apparatus for forming solder balls and solder columns
US5803343A (en) * 1995-10-30 1998-09-08 Delco Electronics Corp. Solder process for enhancing reliability of multilayer hybrid circuits
US5803344A (en) * 1996-09-09 1998-09-08 Delco Electronics Corp. Dual-solder process for enhancing reliability of thick-film hybrid circuits
US5953623A (en) * 1997-04-10 1999-09-14 International Business Machines Corporation Ball limiting metal mask and tin enrichment of high melting point solder for low temperature interconnection
US5937320A (en) * 1998-04-08 1999-08-10 International Business Machines Corporation Barrier layers for electroplated SnPb eutectic solder joints
US6483195B1 (en) * 1999-03-16 2002-11-19 Sumitomo Bakelite Company Limited Transfer bump street, semiconductor flip chip and method of producing same
US6281106B1 (en) * 1999-11-25 2001-08-28 Delphi Technologies, Inc. Method of solder bumping a circuit component
US6492197B1 (en) * 2000-05-23 2002-12-10 Unitive Electronics Inc. Trilayer/bilayer solder bumps and fabrication methods therefor
US20030234276A1 (en) * 2002-06-20 2003-12-25 Ultratera Corporation Strengthened bonding mechanism for semiconductor package
JP2004260157A (ja) * 2003-02-07 2004-09-16 Toshiba Corp 半導体装置、半導体装置の製造方法及び組立方法
US6893799B2 (en) 2003-03-06 2005-05-17 International Business Machines Corporation Dual-solder flip-chip solder bump
JP2005011838A (ja) * 2003-06-16 2005-01-13 Toshiba Corp 半導体装置及びその組立方法
US7112524B2 (en) * 2003-09-29 2006-09-26 Phoenix Precision Technology Corporation Substrate for pre-soldering material and fabrication method thereof
US20050199996A1 (en) 2004-03-10 2005-09-15 Ho Tony H. Two solder array structure with two high melting solder joints
US20070036670A1 (en) 2005-08-12 2007-02-15 John Pereira Solder composition
US20080248610A1 (en) 2007-04-03 2008-10-09 Advanpack Solutions Pte Ltd Thermal bonding process for chip packaging
US8348139B2 (en) 2010-03-09 2013-01-08 Indium Corporation Composite solder alloy preform
US8671560B2 (en) * 2010-03-30 2014-03-18 Research Triangle Institute In system reflow of low temperature eutectic bond balls
KR101119839B1 (ko) * 2010-05-23 2012-02-28 주식회사 네패스 범프 구조물 및 그 제조 방법
US20130105329A1 (en) 2010-08-02 2013-05-02 Atotech Deutschland Gmbh Method to form solder deposits and non-melting bump structures on substrates
TWI440518B (zh) 2011-08-26 2014-06-11 Univ Nat Taiwan Science Tech 多層結構之高溫焊料及其製造方法
US9368429B2 (en) * 2011-10-25 2016-06-14 Intel Corporation Interposer for hermetic sealing of sensor chips and for their integration with integrated circuit chips
KR102007780B1 (ko) * 2012-07-31 2019-10-21 삼성전자주식회사 멀티 범프 구조의 전기적 연결부를 포함하는 반도체 소자의 제조방법

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013042018A (ja) * 2011-08-18 2013-02-28 Fujitsu Ltd 半導体装置およびその製造方法並びに電子装置

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