KR102184356B1 - 성막장치, 성막방법, 및 전자 디바이스 제조방법 - Google Patents

성막장치, 성막방법, 및 전자 디바이스 제조방법 Download PDF

Info

Publication number
KR102184356B1
KR102184356B1 KR1020190023490A KR20190023490A KR102184356B1 KR 102184356 B1 KR102184356 B1 KR 102184356B1 KR 1020190023490 A KR1020190023490 A KR 1020190023490A KR 20190023490 A KR20190023490 A KR 20190023490A KR 102184356 B1 KR102184356 B1 KR 102184356B1
Authority
KR
South Korea
Prior art keywords
evaporation source
deposition
film formation
crucible
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020190023490A
Other languages
English (en)
Korean (ko)
Other versions
KR20200104743A (ko
Inventor
마사아키 사토
유키 아이자와
Original Assignee
캐논 톡키 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 캐논 톡키 가부시키가이샤 filed Critical 캐논 톡키 가부시키가이샤
Priority to KR1020190023490A priority Critical patent/KR102184356B1/ko
Priority to JP2019203955A priority patent/JP7364432B2/ja
Priority to CN202010114404.9A priority patent/CN111621762B/zh
Publication of KR20200104743A publication Critical patent/KR20200104743A/ko
Application granted granted Critical
Publication of KR102184356B1 publication Critical patent/KR102184356B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/543—Controlling the film thickness or evaporation rate using measurement on the vapor source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
    • C23C14/546—Controlling the film thickness or evaporation rate using measurement on deposited material using crystal oscillators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/682—Mask-wafer alignment
    • H01L51/001—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020190023490A 2019-02-27 2019-02-27 성막장치, 성막방법, 및 전자 디바이스 제조방법 Active KR102184356B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020190023490A KR102184356B1 (ko) 2019-02-27 2019-02-27 성막장치, 성막방법, 및 전자 디바이스 제조방법
JP2019203955A JP7364432B2 (ja) 2019-02-27 2019-11-11 成膜装置、成膜方法、及び電子デバイス製造方法
CN202010114404.9A CN111621762B (zh) 2019-02-27 2020-02-25 成膜装置、成膜方法以及电子器件制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020190023490A KR102184356B1 (ko) 2019-02-27 2019-02-27 성막장치, 성막방법, 및 전자 디바이스 제조방법

Publications (2)

Publication Number Publication Date
KR20200104743A KR20200104743A (ko) 2020-09-04
KR102184356B1 true KR102184356B1 (ko) 2020-11-30

Family

ID=72257844

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020190023490A Active KR102184356B1 (ko) 2019-02-27 2019-02-27 성막장치, 성막방법, 및 전자 디바이스 제조방법

Country Status (3)

Country Link
JP (1) JP7364432B2 (enExample)
KR (1) KR102184356B1 (enExample)
CN (1) CN111621762B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7309773B2 (ja) * 2021-03-31 2023-07-18 キヤノントッキ株式会社 成膜装置及び電子デバイスの製造方法
CN112877649B (zh) * 2021-04-01 2024-12-20 宁波星河材料科技有限公司 一种便于更换坩埚的高通量薄膜制备装置及其应用
JP7314209B2 (ja) * 2021-06-30 2023-07-25 キヤノントッキ株式会社 成膜装置、成膜方法及び蒸発源ユニット
JP7535030B2 (ja) * 2021-11-26 2024-08-15 キヤノントッキ株式会社 成膜装置、膜厚測定方法及び電子デバイスの製造方法
CN114277354B (zh) * 2021-12-28 2023-09-19 深圳奥卓真空设备技术有限公司 一种af连续真空镀膜设备及其均匀性控制方法
JP7498216B2 (ja) 2022-04-04 2024-06-11 キヤノントッキ株式会社 成膜装置及び成膜方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004076074A (ja) 2002-08-14 2004-03-11 Fuji Photo Film Co Ltd 蒸着装置
JP2009221496A (ja) 2008-03-13 2009-10-01 Toshiba Corp 薄膜形成装置及び薄膜の製造方法
JP2014066673A (ja) 2012-09-27 2014-04-17 Hitachi High-Technologies Corp レートセンサ及びリニアソース並びに蒸着装置
KR101496667B1 (ko) * 2010-11-04 2015-02-27 캐논 가부시끼가이샤 진공 증착장치
KR101851734B1 (ko) * 2016-12-29 2018-04-24 주식회사 에스에프에이 증착장치

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040040504A1 (en) * 2002-08-01 2004-03-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing apparatus
CN1723741B (zh) * 2002-12-12 2012-09-05 株式会社半导体能源研究所 发光装置、制造装置、成膜方法及清洁方法
JP2004238688A (ja) * 2003-02-06 2004-08-26 Sony Corp 有機発光素子の製造装置、および表示装置の製造システム
JP4373235B2 (ja) * 2003-02-14 2009-11-25 株式会社半導体エネルギー研究所 成膜装置及び成膜方法
JP2004256843A (ja) * 2003-02-25 2004-09-16 Jeol Ltd 真空蒸着装置
JP4463492B2 (ja) * 2003-04-10 2010-05-19 株式会社半導体エネルギー研究所 製造装置
JP4490160B2 (ja) * 2004-05-13 2010-06-23 株式会社アルバック 有機薄膜の成膜装置
JP5325471B2 (ja) * 2007-07-06 2013-10-23 株式会社半導体エネルギー研究所 発光装置の作製方法
JP5557817B2 (ja) * 2011-09-30 2014-07-23 株式会社日立ハイテクノロジーズ 蒸発源および成膜装置
US8976698B2 (en) * 2012-08-09 2015-03-10 Qualcomm Incorporated Methods and apparatus for radio link monitoring in new carrier type (NCT) in a long term evolution (LTE) system
JP2014055342A (ja) * 2012-09-14 2014-03-27 Hitachi High-Technologies Corp 成膜装置
JP6179908B2 (ja) * 2013-12-12 2017-08-16 株式会社アルバック インライン式成膜装置の成膜準備方法及びインライン式成膜装置並びにキャリア
JP6139423B2 (ja) * 2014-01-29 2017-05-31 シャープ株式会社 蒸着装置、蒸着方法、及び、有機エレクトロルミネッセンス素子の製造方法
JP6243474B2 (ja) * 2015-06-18 2017-12-06 キヤノントッキ株式会社 真空蒸着装置、蒸着膜の製造方法および有機電子デバイスの製造方法
CN106256925B (zh) * 2015-06-18 2020-10-02 佳能特机株式会社 真空蒸镀装置、蒸镀膜的制造方法和有机电子器件的制造方法
CN207002834U (zh) * 2017-05-25 2018-02-13 昆山国显光电有限公司 一种蒸镀速率测量装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004076074A (ja) 2002-08-14 2004-03-11 Fuji Photo Film Co Ltd 蒸着装置
JP2009221496A (ja) 2008-03-13 2009-10-01 Toshiba Corp 薄膜形成装置及び薄膜の製造方法
KR101496667B1 (ko) * 2010-11-04 2015-02-27 캐논 가부시끼가이샤 진공 증착장치
JP2014066673A (ja) 2012-09-27 2014-04-17 Hitachi High-Technologies Corp レートセンサ及びリニアソース並びに蒸着装置
KR101851734B1 (ko) * 2016-12-29 2018-04-24 주식회사 에스에프에이 증착장치

Also Published As

Publication number Publication date
JP2020139227A (ja) 2020-09-03
CN111621762A (zh) 2020-09-04
KR20200104743A (ko) 2020-09-04
CN111621762B (zh) 2023-06-02
JP7364432B2 (ja) 2023-10-18

Similar Documents

Publication Publication Date Title
KR102184356B1 (ko) 성막장치, 성막방법, 및 전자 디바이스 제조방법
CN110777350B (zh) 蒸发率测定装置、蒸发率测定装置的控制方法、成膜装置、成膜方法及电子设备的制造方法
JP6641649B2 (ja) 水晶振動子の寿命判定方法、膜厚測定装置、成膜方法、成膜装置、及び電子デバイス製造方法
EP1384796A2 (en) Organic film formation apparatus
KR102617764B1 (ko) 성막 장치, 성막 방법, 및 전자 디바이스의 제조 방법
JP7150776B2 (ja) 成膜装置及び電子デバイスの製造方法
CN114990490B (zh) 成膜装置、成膜方法以及电子器件的制造方法
CN115011929B (zh) 成膜装置、成膜装置的控制方法以及电子器件的制造方法
KR102778977B1 (ko) 퇴적량 정보 취득장치, 성막장치, 개폐장치, 성막방법, 및 전자 디바이스 제조방법
TWI833047B (zh) 成膜裝置、使用其之成膜方法及電子裝置之製造方法
KR20230120774A (ko) 셔터를 포함하는 진공 증발원 모듈 및 이를 이용한 유기발광 디스플레이 장치 제조 방법
KR20210060172A (ko) 냉각재킷, 이를 포함하는 성막장치, 이를 사용한 성막방법 및 전자디바이스 제조방법
JP2024179102A (ja) 成膜装置、成膜方法、及び電子デバイスの製造方法
KR102335724B1 (ko) 성막장치, 성막방법, 및 전자 디바이스 제조방법
JP7291098B2 (ja) 成膜装置、成膜方法、及び電子デバイスの製造方法
JP2022107969A (ja) 成膜装置、成膜方法及び電子デバイスの製造方法
JP2023152477A (ja) 成膜装置及び成膜方法
JP2022167957A (ja) 成膜装置及び電子デバイスの製造方法
WO2024070473A1 (ja) 成膜装置および成膜方法
CN111684103A (zh) 用于沉积蒸发材料的沉积设备及其方法

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PA0302 Request for accelerated examination

St.27 status event code: A-1-2-D10-D17-exm-PA0302

St.27 status event code: A-1-2-D10-D16-exm-PA0302

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PX0901 Re-examination

St.27 status event code: A-2-3-E10-E12-rex-PX0901

PX0701 Decision of registration after re-examination

St.27 status event code: A-3-4-F10-F13-rex-PX0701

X701 Decision to grant (after re-examination)
GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6