JP7364432B2 - 成膜装置、成膜方法、及び電子デバイス製造方法 - Google Patents

成膜装置、成膜方法、及び電子デバイス製造方法 Download PDF

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JP7364432B2
JP7364432B2 JP2019203955A JP2019203955A JP7364432B2 JP 7364432 B2 JP7364432 B2 JP 7364432B2 JP 2019203955 A JP2019203955 A JP 2019203955A JP 2019203955 A JP2019203955 A JP 2019203955A JP 7364432 B2 JP7364432 B2 JP 7364432B2
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film
evaporation source
evaporation
crucible
substrate
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JP2020139227A5 (enExample
JP2020139227A (ja
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昌明 佐藤
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Canon Tokki Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/543—Controlling the film thickness or evaporation rate using measurement on the vapor source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
    • C23C14/546—Controlling the film thickness or evaporation rate using measurement on deposited material using crystal oscillators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/682—Mask-wafer alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
JP2019203955A 2019-02-27 2019-11-11 成膜装置、成膜方法、及び電子デバイス製造方法 Active JP7364432B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2019-0023490 2019-02-27
KR1020190023490A KR102184356B1 (ko) 2019-02-27 2019-02-27 성막장치, 성막방법, 및 전자 디바이스 제조방법

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JP2020139227A5 JP2020139227A5 (enExample) 2022-09-29
JP7364432B2 true JP7364432B2 (ja) 2023-10-18

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JP (1) JP7364432B2 (enExample)
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CN (1) CN111621762B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7309773B2 (ja) * 2021-03-31 2023-07-18 キヤノントッキ株式会社 成膜装置及び電子デバイスの製造方法
CN112877649B (zh) * 2021-04-01 2024-12-20 宁波星河材料科技有限公司 一种便于更换坩埚的高通量薄膜制备装置及其应用
JP7314209B2 (ja) * 2021-06-30 2023-07-25 キヤノントッキ株式会社 成膜装置、成膜方法及び蒸発源ユニット
JP7535030B2 (ja) * 2021-11-26 2024-08-15 キヤノントッキ株式会社 成膜装置、膜厚測定方法及び電子デバイスの製造方法
CN114277354B (zh) * 2021-12-28 2023-09-19 深圳奥卓真空设备技术有限公司 一种af连续真空镀膜设备及其均匀性控制方法
JP7498216B2 (ja) * 2022-04-04 2024-06-11 キヤノントッキ株式会社 成膜装置及び成膜方法

Citations (5)

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JP2004256843A (ja) 2003-02-25 2004-09-16 Jeol Ltd 真空蒸着装置
JP2004263299A (ja) 2003-02-14 2004-09-24 Semiconductor Energy Lab Co Ltd 製造装置
JP2005325391A (ja) 2004-05-13 2005-11-24 Ulvac Japan Ltd 有機薄膜の成膜装置
JP2015140458A (ja) 2014-01-29 2015-08-03 シャープ株式会社 蒸着装置、蒸着方法、及び、有機エレクトロルミネッセンス素子の製造方法
JP2017008409A (ja) 2015-06-18 2017-01-12 キヤノントッキ株式会社 真空蒸着装置、蒸着膜の製造方法および有機電子デバイスの製造方法

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US20040040504A1 (en) * 2002-08-01 2004-03-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing apparatus
JP2004076074A (ja) 2002-08-14 2004-03-11 Fuji Photo Film Co Ltd 蒸着装置
JP5072184B2 (ja) * 2002-12-12 2012-11-14 株式会社半導体エネルギー研究所 成膜方法
JP2004238688A (ja) * 2003-02-06 2004-08-26 Sony Corp 有機発光素子の製造装置、および表示装置の製造システム
JP4463492B2 (ja) * 2003-04-10 2010-05-19 株式会社半導体エネルギー研究所 製造装置
JP5325471B2 (ja) * 2007-07-06 2013-10-23 株式会社半導体エネルギー研究所 発光装置の作製方法
JP2009221496A (ja) 2008-03-13 2009-10-01 Toshiba Corp 薄膜形成装置及び薄膜の製造方法
JP2012112034A (ja) * 2010-11-04 2012-06-14 Canon Inc 真空蒸着装置
JP5557817B2 (ja) * 2011-09-30 2014-07-23 株式会社日立ハイテクノロジーズ 蒸発源および成膜装置
US8976698B2 (en) * 2012-08-09 2015-03-10 Qualcomm Incorporated Methods and apparatus for radio link monitoring in new carrier type (NCT) in a long term evolution (LTE) system
JP2014055342A (ja) * 2012-09-14 2014-03-27 Hitachi High-Technologies Corp 成膜装置
JP2014066673A (ja) 2012-09-27 2014-04-17 Hitachi High-Technologies Corp レートセンサ及びリニアソース並びに蒸着装置
WO2015087505A1 (ja) * 2013-12-12 2015-06-18 株式会社アルバック インライン式成膜装置の成膜準備方法及びインライン式成膜装置並びにキャリア
CN106256925B (zh) * 2015-06-18 2020-10-02 佳能特机株式会社 真空蒸镀装置、蒸镀膜的制造方法和有机电子器件的制造方法
KR101851734B1 (ko) * 2016-12-29 2018-04-24 주식회사 에스에프에이 증착장치
CN207002834U (zh) * 2017-05-25 2018-02-13 昆山国显光电有限公司 一种蒸镀速率测量装置

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Publication number Priority date Publication date Assignee Title
JP2004263299A (ja) 2003-02-14 2004-09-24 Semiconductor Energy Lab Co Ltd 製造装置
JP2004256843A (ja) 2003-02-25 2004-09-16 Jeol Ltd 真空蒸着装置
JP2005325391A (ja) 2004-05-13 2005-11-24 Ulvac Japan Ltd 有機薄膜の成膜装置
JP2015140458A (ja) 2014-01-29 2015-08-03 シャープ株式会社 蒸着装置、蒸着方法、及び、有機エレクトロルミネッセンス素子の製造方法
JP2017008409A (ja) 2015-06-18 2017-01-12 キヤノントッキ株式会社 真空蒸着装置、蒸着膜の製造方法および有機電子デバイスの製造方法

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KR102184356B1 (ko) 2020-11-30
JP2020139227A (ja) 2020-09-03
KR20200104743A (ko) 2020-09-04
CN111621762A (zh) 2020-09-04

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