KR102180452B1 - 판독 전압 적응을 위한 보상 루프 - Google Patents

판독 전압 적응을 위한 보상 루프 Download PDF

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Publication number
KR102180452B1
KR102180452B1 KR1020140010149A KR20140010149A KR102180452B1 KR 102180452 B1 KR102180452 B1 KR 102180452B1 KR 1020140010149 A KR1020140010149 A KR 1020140010149A KR 20140010149 A KR20140010149 A KR 20140010149A KR 102180452 B1 KR102180452 B1 KR 102180452B1
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South Korea
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voltage
nominal
reads
read
nominal voltage
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Korean (ko)
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KR20140099196A (ko
Inventor
압델-하킴 에스 알루시엔
윤시앙 우
에르히 에프 하라츠슈
자말 리아니
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엘에스아이 코포레이션
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
KR1020140010149A 2013-02-01 2014-01-28 판독 전압 적응을 위한 보상 루프 Expired - Fee Related KR102180452B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/757,027 US8879324B2 (en) 2013-02-01 2013-02-01 Compensation loop for read voltage adaptation
US13/757,027 2013-02-01

Publications (2)

Publication Number Publication Date
KR20140099196A KR20140099196A (ko) 2014-08-11
KR102180452B1 true KR102180452B1 (ko) 2020-11-18

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KR1020140010149A Expired - Fee Related KR102180452B1 (ko) 2013-02-01 2014-01-28 판독 전압 적응을 위한 보상 루프

Country Status (6)

Country Link
US (1) US8879324B2 (enExample)
EP (1) EP2763140A2 (enExample)
JP (1) JP6556423B2 (enExample)
KR (1) KR102180452B1 (enExample)
CN (1) CN103971723B (enExample)
TW (1) TWI613661B (enExample)

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US9286155B1 (en) * 2013-05-24 2016-03-15 Marvell International Ltd. Systems and methods for generating soft information in a flash device
US9818488B2 (en) * 2015-10-30 2017-11-14 Seagate Technology Llc Read threshold voltage adaptation using bit error rates based on decoded data
US9633740B1 (en) * 2016-02-11 2017-04-25 Seagate Technology Llc Read retry operations where likelihood value assignments change sign at different read voltages for each read retry
US9720754B2 (en) 2014-11-20 2017-08-01 Western Digital Technologies, Inc. Read level grouping for increased flash performance
US9576671B2 (en) * 2014-11-20 2017-02-21 Western Digital Technologies, Inc. Calibrating optimal read levels
US9905302B2 (en) 2014-11-20 2018-02-27 Western Digital Technologies, Inc. Read level grouping algorithms for increased flash performance
KR102253592B1 (ko) * 2014-12-23 2021-05-18 삼성전자주식회사 초기 문턱 전압 분포 변화를 보상할 수 있는 데이터 저장 장치, 이의 작동 방법, 및 이를 포함하는 데이터 처리 시스템
GB2537484B (en) * 2015-03-20 2019-07-03 HGST Netherlands BV Read level grouping for increased flash performance
US10324648B1 (en) 2016-04-28 2019-06-18 Seagate Technology Llc Wear-based access optimization
US9971646B2 (en) 2016-06-01 2018-05-15 Apple Inc. Reading-threshold setting based on data encoded with a multi-component code
US10120585B2 (en) * 2016-08-10 2018-11-06 SK Hynix Inc. Memory system of optimal read reference voltage and operating method thereof
JP6659494B2 (ja) * 2016-08-19 2020-03-04 キオクシア株式会社 半導体記憶装置及びメモリシステム
US9953709B2 (en) 2016-09-06 2018-04-24 Toshiba Memory Corporation Semiconductor memory device and memory system
KR20180051272A (ko) * 2016-11-08 2018-05-16 에스케이하이닉스 주식회사 데이터 저장 장치 및 그것의 동작 방법
CN110299177B (zh) * 2019-07-04 2021-01-19 合肥联诺科技有限公司 一种减小读操作电压抖动的电荷补偿电路及存储器结构
US11587627B2 (en) * 2021-04-16 2023-02-21 Micron Technology, Inc. Determining voltage offsets for memory read operations

Citations (1)

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US20120236656A1 (en) 2010-07-09 2012-09-20 Stec, Inc. Apparatus and method for determining a read level of a memory cell based on cycle information

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KR100408688B1 (ko) * 2001-10-23 2003-12-06 주식회사 하이닉스반도체 연산증폭기의 오프셋 전압을 보상하는 회로
US6956770B2 (en) * 2003-09-17 2005-10-18 Sandisk Corporation Non-volatile memory and method with bit line compensation dependent on neighboring operating modes
JP5174028B2 (ja) * 2006-09-27 2013-04-03 サンディスク テクノロジィース インコーポレイテッド セル集団分布による読み出しマージンを有するメモリ
KR100888842B1 (ko) * 2007-06-28 2009-03-17 삼성전자주식회사 읽기 전압을 최적화할 수 있는 플래시 메모리 장치 및그것의 독출 전압 설정 방법
US8117375B2 (en) * 2007-10-17 2012-02-14 Micron Technology, Inc. Memory device program window adjustment
KR20110061649A (ko) * 2008-09-30 2011-06-09 엘에스아이 코포레이션 소프트 데이터 값 생성 방법
JP4818381B2 (ja) * 2009-03-02 2011-11-16 株式会社東芝 半導体メモリ装置
KR101027501B1 (ko) * 2009-07-10 2011-04-06 쓰리에이로직스(주) Ｒｆ 리더, 이의 오프셋 전압 보상 방법 및 이를 포함하는 ｒｆ 시스템
US20110041005A1 (en) * 2009-08-11 2011-02-17 Selinger Robert D Controller and Method for Providing Read Status and Spare Block Management Information in a Flash Memory System
US8077515B2 (en) * 2009-08-25 2011-12-13 Micron Technology, Inc. Methods, devices, and systems for dealing with threshold voltage change in memory devices
KR101618311B1 (ko) * 2010-02-08 2016-05-04 삼성전자주식회사 플래시 메모리 장치 및 그것의 읽기 방법
US8467249B2 (en) * 2010-07-06 2013-06-18 Densbits Technologies Ltd. Systems and methods for storing, retrieving, and adjusting read thresholds in flash memory storage system
KR101868332B1 (ko) * 2010-11-25 2018-06-20 삼성전자주식회사 플래시 메모리 장치 및 그것을 포함한 데이터 저장 장치

Patent Citations (1)

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US20120236656A1 (en) 2010-07-09 2012-09-20 Stec, Inc. Apparatus and method for determining a read level of a memory cell based on cycle information

Also Published As

Publication number Publication date
JP2014149906A (ja) 2014-08-21
EP2763140A2 (en) 2014-08-06
TW201440060A (zh) 2014-10-16
KR20140099196A (ko) 2014-08-11
JP6556423B2 (ja) 2019-08-07
CN103971723A (zh) 2014-08-06
CN103971723B (zh) 2017-07-11
US8879324B2 (en) 2014-11-04
US20140219028A1 (en) 2014-08-07
TWI613661B (zh) 2018-02-01

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