KR102171560B1 - 플라즈마 시스템과 연관된 웨이퍼 바이어스를 결정하기 위한 모델링을 사용하는 방법 - Google Patents

플라즈마 시스템과 연관된 웨이퍼 바이어스를 결정하기 위한 모델링을 사용하는 방법 Download PDF

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KR102171560B1
KR102171560B1 KR1020140012332A KR20140012332A KR102171560B1 KR 102171560 B1 KR102171560 B1 KR 102171560B1 KR 1020140012332 A KR1020140012332 A KR 1020140012332A KR 20140012332 A KR20140012332 A KR 20140012332A KR 102171560 B1 KR102171560 B1 KR 102171560B1
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current
model
voltage
magnitude
impedance matching
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KR20140098715A (ko
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주니어 존 씨. 발코어
브래드포드 제이. 린다커
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램 리써치 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/0046—Arrangements for measuring currents or voltages or for indicating presence or sign thereof characterised by a specific application or detail not covered by any other subgroup of G01R19/00
    • G01R19/0061—Measuring currents of particle-beams, currents from electron multipliers, photocurrents, ion currents; Measuring in plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/327—Arrangements for generating the plasma

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020140012332A 2013-01-31 2014-02-03 플라즈마 시스템과 연관된 웨이퍼 바이어스를 결정하기 위한 모델링을 사용하는 방법 Active KR102171560B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/756,390 US9502216B2 (en) 2013-01-31 2013-01-31 Using modeling to determine wafer bias associated with a plasma system
US13/756,390 2013-01-31

Publications (2)

Publication Number Publication Date
KR20140098715A KR20140098715A (ko) 2014-08-08
KR102171560B1 true KR102171560B1 (ko) 2020-10-30

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KR1020140012332A Active KR102171560B1 (ko) 2013-01-31 2014-02-03 플라즈마 시스템과 연관된 웨이퍼 바이어스를 결정하기 위한 모델링을 사용하는 방법

Country Status (6)

Country Link
US (2) US9502216B2 (https=)
JP (2) JP6293497B2 (https=)
KR (1) KR102171560B1 (https=)
CN (2) CN103984790B (https=)
SG (1) SG2014005557A (https=)
TW (1) TWI598582B (https=)

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TWI700598B (zh) 2019-04-22 2020-08-01 崛智科技有限公司 晶圓特性預測方法與電子裝置
KR102932650B1 (ko) * 2019-05-07 2026-02-27 램 리써치 코포레이션 전압 및 전류 프로브
JP7569858B2 (ja) 2019-12-02 2024-10-18 ラム リサーチ コーポレーション 無線周波数支援プラズマ生成におけるインピーダンス変換
US20240203711A1 (en) * 2020-03-27 2024-06-20 Lam Research Corporation Rf signal parameter measurement in an integrated circuit fabrication chamber
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JP7544594B2 (ja) 2020-12-25 2024-09-03 株式会社ダイヘン 高周波電源システム
JP7691330B2 (ja) 2021-09-29 2025-06-11 株式会社ダイヘン インピーダンス整合器および高周波電源システム
JP7633133B2 (ja) 2021-09-30 2025-02-19 株式会社ダイヘン 高周波電源装置
JP2023097863A (ja) 2021-12-28 2023-07-10 株式会社ダイヘン 高周波電源システム
JP7695880B2 (ja) 2021-12-28 2025-06-19 株式会社ダイヘン 高周波電源装置
JP7763099B2 (ja) 2021-12-28 2025-10-31 株式会社ダイヘン 高周波電源装置
JP2023098203A (ja) 2021-12-28 2023-07-10 株式会社ダイヘン 高周波電源装置
US12340987B2 (en) * 2022-05-12 2025-06-24 Taiwan Semiconductor Manufacturing Company Limited Tunable plasma exclusion zone in semiconductor fabrication
JP2024095372A (ja) 2022-12-28 2024-07-10 株式会社ダイヘン 高周波電力供給システムの制御方法
JP2024095373A (ja) 2022-12-28 2024-07-10 株式会社ダイヘン 高周波電力供給システム
JP2024095370A (ja) 2022-12-28 2024-07-10 株式会社ダイヘン 高周波電力供給システム
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CN120164771B (zh) * 2023-12-15 2025-12-12 北京北方华创微电子装备有限公司 射频源装置及其阻抗匹配方法、半导体工艺设备
KR20250117020A (ko) * 2024-01-26 2025-08-04 삼성전자주식회사 기판 처리 장치
CN121003007A (zh) * 2024-03-21 2025-11-21 株式会社日立高新技术 等离子处理装置

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US20140214350A1 (en) 2014-07-31
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US10340127B2 (en) 2019-07-02
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