KR102164880B1 - 웨이퍼 레벨 패키징 회로 장치를 위한 집적형 접합선 스페이서 - Google Patents

웨이퍼 레벨 패키징 회로 장치를 위한 집적형 접합선 스페이서 Download PDF

Info

Publication number
KR102164880B1
KR102164880B1 KR1020157014027A KR20157014027A KR102164880B1 KR 102164880 B1 KR102164880 B1 KR 102164880B1 KR 1020157014027 A KR1020157014027 A KR 1020157014027A KR 20157014027 A KR20157014027 A KR 20157014027A KR 102164880 B1 KR102164880 B1 KR 102164880B1
Authority
KR
South Korea
Prior art keywords
wafer
layer
forming
solder metal
level packaging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020157014027A
Other languages
English (en)
Korean (ko)
Other versions
KR20150082363A (ko
Inventor
롤랜드 구치
부 딥
토마스 알렌 코시안
스티븐 에이치. 블랙
아담 엠. 케네디
Original Assignee
레이던 컴퍼니
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 레이던 컴퍼니 filed Critical 레이던 컴퍼니
Publication of KR20150082363A publication Critical patent/KR20150082363A/ko
Application granted granted Critical
Publication of KR102164880B1 publication Critical patent/KR102164880B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00269—Bonding of solid lids or wafers to the substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0035—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS
    • B81B7/0041—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS maintaining a controlled atmosphere with techniques not provided for in B81B7/0038
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/007—Interconnections between the MEMS and external electrical signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0172—Seals
    • B81C2203/019—Seals characterised by the material or arrangement of seals between parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H01L2224/27444—Manufacturing methods by blanket deposition of the material of the layer connector in gaseous form
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H01L2224/2746—Plating
    • H01L2224/27462—Electroplating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H01L2224/2746—Plating
    • H01L2224/27464—Electroless plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/2901—Shape
    • H01L2224/29011—Shape comprising apertures or cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83007—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a permanent auxiliary member being left in the finished device, e.g. aids for holding or protecting the layer connector during or after the bonding process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8312—Aligning
    • H01L2224/83136—Aligning involving guiding structures, e.g. spacers or supporting members
    • H01L2224/83138—Aligning involving guiding structures, e.g. spacers or supporting members the guiding structures being at least partially left in the finished device
    • H01L2224/83139—Guiding structures on the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8312—Aligning
    • H01L2224/83136—Aligning involving guiding structures, e.g. spacers or supporting members
    • H01L2224/83138—Aligning involving guiding structures, e.g. spacers or supporting members the guiding structures being at least partially left in the finished device
    • H01L2224/8314—Guiding structures outside the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8312—Aligning
    • H01L2224/83136—Aligning involving guiding structures, e.g. spacers or supporting members
    • H01L2224/83138—Aligning involving guiding structures, e.g. spacers or supporting members the guiding structures being at least partially left in the finished device
    • H01L2224/83141—Guiding structures both on and outside the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
    • H01L2924/1461—MEMS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/163—Connection portion, e.g. seal

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Micromachines (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR1020157014027A 2012-11-02 2013-10-23 웨이퍼 레벨 패키징 회로 장치를 위한 집적형 접합선 스페이서 Expired - Fee Related KR102164880B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/667,458 US8736045B1 (en) 2012-11-02 2012-11-02 Integrated bondline spacers for wafer level packaged circuit devices
US13/667,458 2012-11-02
PCT/US2013/066266 WO2014070534A2 (en) 2012-11-02 2013-10-23 Integrated bondline spacers for wafer level packaged circuit devices

Publications (2)

Publication Number Publication Date
KR20150082363A KR20150082363A (ko) 2015-07-15
KR102164880B1 true KR102164880B1 (ko) 2020-10-13

Family

ID=50621587

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157014027A Expired - Fee Related KR102164880B1 (ko) 2012-11-02 2013-10-23 웨이퍼 레벨 패키징 회로 장치를 위한 집적형 접합선 스페이서

Country Status (8)

Country Link
US (3) US8736045B1 (enExample)
EP (2) EP2915190B1 (enExample)
JP (1) JP6412009B2 (enExample)
KR (1) KR102164880B1 (enExample)
CA (1) CA2889975C (enExample)
IL (2) IL238325A0 (enExample)
NO (1) NO2994775T3 (enExample)
WO (1) WO2014070534A2 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8736045B1 (en) * 2012-11-02 2014-05-27 Raytheon Company Integrated bondline spacers for wafer level packaged circuit devices
US9287188B2 (en) 2013-02-05 2016-03-15 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for a seal ring structure
US9673169B2 (en) 2013-02-05 2017-06-06 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for a wafer seal ring
US9540231B2 (en) * 2014-01-28 2017-01-10 Taiwan Semiconductor Manufacturing Co., Ltd. MEMS device with a bonding layer embedded in the cap
CN104851848A (zh) * 2014-02-17 2015-08-19 中芯国际集成电路制造(上海)有限公司 一种c-sam中接合晶圆的密封结构及其制备方法
US9688529B2 (en) * 2014-06-10 2017-06-27 Qorvo Us, Inc. Glass wafer assembly
US9334154B2 (en) 2014-08-11 2016-05-10 Raytheon Company Hermetically sealed package having stress reducing layer
US9637372B2 (en) 2015-04-27 2017-05-02 Nxp Usa, Inc. Bonded wafer structure having cavities with low pressure and method for forming
US9771258B2 (en) * 2015-06-24 2017-09-26 Raytheon Company Wafer level MEMS package including dual seal ring
US20170081178A1 (en) * 2015-09-22 2017-03-23 Freescale Semiconductor, Inc. Semiconductor device package with seal structure
US9570321B1 (en) * 2015-10-20 2017-02-14 Raytheon Company Use of an external getter to reduce package pressure
DE102015224519A1 (de) * 2015-12-08 2017-06-08 Robert Bosch Gmbh MEMS-Bauteil mit zwei unterschiedlichen Innendrücken
CN105731355B (zh) * 2016-04-29 2017-05-31 合肥芯福传感器技术有限公司 一体化多功能陶瓷封装管壳
JP6237969B1 (ja) * 2017-03-29 2017-11-29 三菱電機株式会社 中空封止デバイス及びその製造方法
CN107055456A (zh) * 2017-04-14 2017-08-18 上海华虹宏力半导体制造有限公司 微机电系统器件的封装结构及方法
CN107572474B (zh) * 2017-08-22 2019-04-12 华中科技大学 一种封装间距可高精度控制的mems封装结构的封装方法
CN109879240B (zh) * 2017-12-06 2021-11-09 有研工程技术研究院有限公司 一种厚膜吸气材料的制备方法
CN113603053B (zh) * 2018-01-23 2024-01-23 苏州明皜传感科技股份有限公司 微机电系统装置
US10830787B2 (en) * 2018-02-20 2020-11-10 General Electric Company Optical accelerometers for use in navigation grade environments
EP4282811A4 (en) * 2021-01-21 2024-11-20 Hangzhou Hikmicro Sensing Technology Co., Ltd. MEMS SENSOR AND ITS MANUFACTURING METHOD
CN113472314B (zh) * 2021-07-22 2024-12-20 开元通信技术（厦门）有限公司 体声波滤波器及其制备方法
DE102023210603A1 (de) * 2023-10-26 2025-04-30 Robert Bosch Gesellschaft mit beschränkter Haftung Verfahren zum Verarbeiten eines Wafers

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020000646A1 (en) * 2000-02-02 2002-01-03 Raytheon Company, A Delware Corporation Vacuum package fabrication of integrated circuit components
JP2010017805A (ja) * 2008-07-09 2010-01-28 Tohoku Univ 機能デバイス及びその製造方法
JP2012104815A (ja) * 2010-11-05 2012-05-31 Raytheon Co ディスポーザブル接合ギャップ制御構造

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5232962A (en) 1991-10-09 1993-08-03 Quantum Materials, Inc. Adhesive bonding composition with bond line limiting spacer system
US20020179921A1 (en) * 2001-06-02 2002-12-05 Cohn Michael B. Compliant hermetic package
US7952189B2 (en) * 2004-05-27 2011-05-31 Chang-Feng Wan Hermetic packaging and method of manufacture and use therefore
US7576427B2 (en) 2004-05-28 2009-08-18 Stellar Micro Devices Cold weld hermetic MEMS package and method of manufacture
US7442570B2 (en) * 2005-03-18 2008-10-28 Invensence Inc. Method of fabrication of a AL/GE bonding in a wafer packaging environment and a product produced therefrom
US20070190747A1 (en) * 2006-01-23 2007-08-16 Tessera Technologies Hungary Kft. Wafer level packaging to lidded chips
US20120132522A1 (en) 2007-07-19 2012-05-31 Innovative Micro Technology Deposition/bonding chamber for encapsulated microdevices and method of use
US20090266480A1 (en) 2008-04-29 2009-10-29 International Business Machines Corporation Process for Preparing a Solder Stand-Off
DE102008042106A1 (de) * 2008-09-15 2010-03-18 Robert Bosch Gmbh Verkapselung, MEMS sowie Verfahren zum Verkapseln
US8644125B2 (en) * 2008-09-30 2014-02-04 Intel Corporation Seek scan probe (SSP) cantilever to mover wafer bond stop
JP5493767B2 (ja) * 2009-11-25 2014-05-14 大日本印刷株式会社 センサーユニットおよびその製造方法
TWI511243B (zh) 2009-12-31 2015-12-01 精材科技股份有限公司 晶片封裝體及其製造方法
US8809784B2 (en) 2010-10-21 2014-08-19 Raytheon Company Incident radiation detector packaging
US8507191B2 (en) * 2011-01-07 2013-08-13 Micron Technology, Inc. Methods of forming a patterned, silicon-enriched developable antireflective material and semiconductor device structures including the same
US8736045B1 (en) 2012-11-02 2014-05-27 Raytheon Company Integrated bondline spacers for wafer level packaged circuit devices

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020000646A1 (en) * 2000-02-02 2002-01-03 Raytheon Company, A Delware Corporation Vacuum package fabrication of integrated circuit components
JP2010017805A (ja) * 2008-07-09 2010-01-28 Tohoku Univ 機能デバイス及びその製造方法
JP2012104815A (ja) * 2010-11-05 2012-05-31 Raytheon Co ディスポーザブル接合ギャップ制御構造

Also Published As

Publication number Publication date
EP3340294A1 (en) 2018-06-27
NO2994775T3 (enExample) 2018-02-03
CA2889975A1 (en) 2014-05-08
JP6412009B2 (ja) 2018-10-24
IL261373A (en) 2018-10-31
EP2915190B1 (en) 2018-03-07
JP2016504757A (ja) 2016-02-12
CA2889975C (en) 2022-01-04
EP2915190A2 (en) 2015-09-09
US20140124899A1 (en) 2014-05-08
US9187312B2 (en) 2015-11-17
US20140346643A1 (en) 2014-11-27
US9174836B2 (en) 2015-11-03
IL238325A0 (en) 2015-06-30
US20140193948A1 (en) 2014-07-10
WO2014070534A3 (en) 2015-07-16
EP2915190A4 (en) 2016-09-14
KR20150082363A (ko) 2015-07-15
US8736045B1 (en) 2014-05-27
IL261373B (en) 2021-04-29
WO2014070534A2 (en) 2014-05-08

Similar Documents

Publication Publication Date Title
KR102164880B1 (ko) 웨이퍼 레벨 패키징 회로 장치를 위한 집적형 접합선 스페이서
CN103515334B (zh) 晶片封装体及其形成方法、半导体结构的形成方法
TWI509753B (zh) 晶片封裝體及其形成方法
US8981500B2 (en) Method for producing an optical window device for a MEMS device
US8790936B2 (en) Method for manufacturing optical deflector for forming dicing street with double etching
CN106098625B (zh) 等离子划片的芯片包封结构及制作方法
US7026189B2 (en) Wafer packaging and singulation method
CN111373303A (zh) 异物除去方法及光检测装置的制造方法
CN102311093B (zh) 晶片封装体的形成方法
TW201205689A (en) Method of etching and singulating a cap wafer
JP6803579B2 (ja) Ｍｅｍｓガスセンサ、ｍｅｍｓガスセンサ実装体、ｍｅｍｓガスセンサ・パッケージ、ｍｅｍｓガスセンサ組立体、及びｍｅｍｓガスセンサの製造方法
CN104517828A (zh) 晶片封装体及其制造方法
TWI525763B (zh) 晶片封裝體及其形成方法
CN103165545A (zh) 晶片封装体及其形成方法
US20140374851A1 (en) Mems device and method for fabricating mems devices
US7510947B2 (en) Method for wafer level packaging and fabricating cap structures
TW202438435A (zh) 製造半導體元件的方法和微鏡排列
KR20160079028A (ko) 기판 상에 증착된 패턴들을 형성하는 방법
US20120012963A1 (en) Micro device packaging
US7709940B2 (en) Micro device encapsulation
JP5617801B2 (ja) 半導体装置およびその製造方法
JP5783601B2 (ja) 中空パッケージ

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20241007

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

H13 Ip right lapsed

Free format text: ST27 STATUS EVENT CODE: N-4-6-H10-H13-OTH-PC1903 (AS PROVIDED BY THE NATIONAL OFFICE); TERMINATION CATEGORY : DEFAULT_OF_REGISTRATION_FEE

Effective date: 20241007

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20241007

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000