IL238325A0 - Integrated bonding line separators for wafer-level packaged circuit devices - Google Patents

Integrated bonding line separators for wafer-level packaged circuit devices

Info

Publication number
IL238325A0
IL238325A0 IL238325A IL23832515A IL238325A0 IL 238325 A0 IL238325 A0 IL 238325A0 IL 238325 A IL238325 A IL 238325A IL 23832515 A IL23832515 A IL 23832515A IL 238325 A0 IL238325 A0 IL 238325A0
Authority
IL
Israel
Prior art keywords
integrated
wafer level
circuit devices
packaged circuit
level packaged
Prior art date
Application number
IL238325A
Other languages
English (en)
Hebrew (he)
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of IL238325A0 publication Critical patent/IL238325A0/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0035—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS
    • B81B7/0041—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS maintaining a controlled atmosphere with techniques not provided for in B81B7/0038
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/007—Interconnections between the MEMS and external electrical signals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00269—Bonding of solid lids or wafers to the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0172—Seals
    • B81C2203/019—Seals characterised by the material or arrangement of seals between parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H01L2224/27444—Manufacturing methods by blanket deposition of the material of the layer connector in gaseous form
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H01L2224/2746—Plating
    • H01L2224/27462—Electroplating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H01L2224/2746—Plating
    • H01L2224/27464—Electroless plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/2901—Shape
    • H01L2224/29011—Shape comprising apertures or cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83007—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a permanent auxiliary member being left in the finished device, e.g. aids for holding or protecting the layer connector during or after the bonding process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8312—Aligning
    • H01L2224/83136—Aligning involving guiding structures, e.g. spacers or supporting members
    • H01L2224/83138—Aligning involving guiding structures, e.g. spacers or supporting members the guiding structures being at least partially left in the finished device
    • H01L2224/83139—Guiding structures on the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8312—Aligning
    • H01L2224/83136—Aligning involving guiding structures, e.g. spacers or supporting members
    • H01L2224/83138—Aligning involving guiding structures, e.g. spacers or supporting members the guiding structures being at least partially left in the finished device
    • H01L2224/8314—Guiding structures outside the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8312—Aligning
    • H01L2224/83136—Aligning involving guiding structures, e.g. spacers or supporting members
    • H01L2224/83138—Aligning involving guiding structures, e.g. spacers or supporting members the guiding structures being at least partially left in the finished device
    • H01L2224/83141—Guiding structures both on and outside the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
    • H01L2924/1461—MEMS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/163—Connection portion, e.g. seal

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Micromachines (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
IL238325A 2012-11-02 2015-04-16 Integrated bonding line separators for wafer-level packaged circuit devices IL238325A0 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/667,458 US8736045B1 (en) 2012-11-02 2012-11-02 Integrated bondline spacers for wafer level packaged circuit devices
PCT/US2013/066266 WO2014070534A2 (en) 2012-11-02 2013-10-23 Integrated bondline spacers for wafer level packaged circuit devices

Publications (1)

Publication Number Publication Date
IL238325A0 true IL238325A0 (en) 2015-06-30

Family

ID=50621587

Family Applications (2)

Application Number Title Priority Date Filing Date
IL238325A IL238325A0 (en) 2012-11-02 2015-04-16 Integrated bonding line separators for wafer-level packaged circuit devices
IL261373A IL261373B (en) 2012-11-02 2018-08-26 Integrated bondline spacers for wafer level packaged circuit devices

Family Applications After (1)

Application Number Title Priority Date Filing Date
IL261373A IL261373B (en) 2012-11-02 2018-08-26 Integrated bondline spacers for wafer level packaged circuit devices

Country Status (8)

Country Link
US (3) US8736045B1 (enExample)
EP (2) EP2915190B1 (enExample)
JP (1) JP6412009B2 (enExample)
KR (1) KR102164880B1 (enExample)
CA (1) CA2889975C (enExample)
IL (2) IL238325A0 (enExample)
NO (1) NO2994775T3 (enExample)
WO (1) WO2014070534A2 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8736045B1 (en) * 2012-11-02 2014-05-27 Raytheon Company Integrated bondline spacers for wafer level packaged circuit devices
US9287188B2 (en) 2013-02-05 2016-03-15 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for a seal ring structure
US9673169B2 (en) 2013-02-05 2017-06-06 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for a wafer seal ring
US9540231B2 (en) * 2014-01-28 2017-01-10 Taiwan Semiconductor Manufacturing Co., Ltd. MEMS device with a bonding layer embedded in the cap
CN104851848A (zh) * 2014-02-17 2015-08-19 中芯国际集成电路制造(上海)有限公司 一种c-sam中接合晶圆的密封结构及其制备方法
US9688529B2 (en) * 2014-06-10 2017-06-27 Qorvo Us, Inc. Glass wafer assembly
US9334154B2 (en) 2014-08-11 2016-05-10 Raytheon Company Hermetically sealed package having stress reducing layer
US9637372B2 (en) 2015-04-27 2017-05-02 Nxp Usa, Inc. Bonded wafer structure having cavities with low pressure and method for forming
US9771258B2 (en) * 2015-06-24 2017-09-26 Raytheon Company Wafer level MEMS package including dual seal ring
US20170081178A1 (en) * 2015-09-22 2017-03-23 Freescale Semiconductor, Inc. Semiconductor device package with seal structure
US9570321B1 (en) * 2015-10-20 2017-02-14 Raytheon Company Use of an external getter to reduce package pressure
DE102015224519A1 (de) * 2015-12-08 2017-06-08 Robert Bosch Gmbh MEMS-Bauteil mit zwei unterschiedlichen Innendrücken
CN105731355B (zh) * 2016-04-29 2017-05-31 合肥芯福传感器技术有限公司 一体化多功能陶瓷封装管壳
JP6237969B1 (ja) * 2017-03-29 2017-11-29 三菱電機株式会社 中空封止デバイス及びその製造方法
CN107055456A (zh) * 2017-04-14 2017-08-18 上海华虹宏力半导体制造有限公司 微机电系统器件的封装结构及方法
CN107572474B (zh) * 2017-08-22 2019-04-12 华中科技大学 一种封装间距可高精度控制的mems封装结构的封装方法
CN109879240B (zh) * 2017-12-06 2021-11-09 有研工程技术研究院有限公司 一种厚膜吸气材料的制备方法
CN113603053B (zh) * 2018-01-23 2024-01-23 苏州明皜传感科技股份有限公司 微机电系统装置
US10830787B2 (en) * 2018-02-20 2020-11-10 General Electric Company Optical accelerometers for use in navigation grade environments
EP4282811A4 (en) * 2021-01-21 2024-11-20 Hangzhou Hikmicro Sensing Technology Co., Ltd. MEMS SENSOR AND ITS MANUFACTURING METHOD
CN113472314B (zh) * 2021-07-22 2024-12-20 开元通信技术（厦门）有限公司 体声波滤波器及其制备方法
DE102023210603A1 (de) * 2023-10-26 2025-04-30 Robert Bosch Gesellschaft mit beschränkter Haftung Verfahren zum Verarbeiten eines Wafers

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US5232962A (en) 1991-10-09 1993-08-03 Quantum Materials, Inc. Adhesive bonding composition with bond line limiting spacer system
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US20020179921A1 (en) * 2001-06-02 2002-12-05 Cohn Michael B. Compliant hermetic package
US7952189B2 (en) * 2004-05-27 2011-05-31 Chang-Feng Wan Hermetic packaging and method of manufacture and use therefore
US7576427B2 (en) 2004-05-28 2009-08-18 Stellar Micro Devices Cold weld hermetic MEMS package and method of manufacture
US7442570B2 (en) * 2005-03-18 2008-10-28 Invensence Inc. Method of fabrication of a AL/GE bonding in a wafer packaging environment and a product produced therefrom
US20070190747A1 (en) * 2006-01-23 2007-08-16 Tessera Technologies Hungary Kft. Wafer level packaging to lidded chips
US20120132522A1 (en) 2007-07-19 2012-05-31 Innovative Micro Technology Deposition/bonding chamber for encapsulated microdevices and method of use
US20090266480A1 (en) 2008-04-29 2009-10-29 International Business Machines Corporation Process for Preparing a Solder Stand-Off
JP5610177B2 (ja) * 2008-07-09 2014-10-22 国立大学法人東北大学 機能デバイス及びその製造方法
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US8644125B2 (en) * 2008-09-30 2014-02-04 Intel Corporation Seek scan probe (SSP) cantilever to mover wafer bond stop
JP5493767B2 (ja) * 2009-11-25 2014-05-14 大日本印刷株式会社 センサーユニットおよびその製造方法
TWI511243B (zh) 2009-12-31 2015-12-01 精材科技股份有限公司 晶片封裝體及其製造方法
US8809784B2 (en) 2010-10-21 2014-08-19 Raytheon Company Incident radiation detector packaging
US8454789B2 (en) * 2010-11-05 2013-06-04 Raytheon Company Disposable bond gap control structures
US8507191B2 (en) * 2011-01-07 2013-08-13 Micron Technology, Inc. Methods of forming a patterned, silicon-enriched developable antireflective material and semiconductor device structures including the same
US8736045B1 (en) 2012-11-02 2014-05-27 Raytheon Company Integrated bondline spacers for wafer level packaged circuit devices

Also Published As

Publication number Publication date
EP3340294A1 (en) 2018-06-27
NO2994775T3 (enExample) 2018-02-03
CA2889975A1 (en) 2014-05-08
JP6412009B2 (ja) 2018-10-24
IL261373A (en) 2018-10-31
EP2915190B1 (en) 2018-03-07
JP2016504757A (ja) 2016-02-12
CA2889975C (en) 2022-01-04
EP2915190A2 (en) 2015-09-09
US20140124899A1 (en) 2014-05-08
US9187312B2 (en) 2015-11-17
US20140346643A1 (en) 2014-11-27
US9174836B2 (en) 2015-11-03
US20140193948A1 (en) 2014-07-10
WO2014070534A3 (en) 2015-07-16
KR102164880B1 (ko) 2020-10-13
EP2915190A4 (en) 2016-09-14
KR20150082363A (ko) 2015-07-15
US8736045B1 (en) 2014-05-27
IL261373B (en) 2021-04-29
WO2014070534A2 (en) 2014-05-08

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