SG11201505057RA - A semiconductor device for high-power applications - Google Patents

A semiconductor device for high-power applications

Info

Publication number
SG11201505057RA
SG11201505057RA SG11201505057RA SG11201505057RA SG11201505057RA SG 11201505057R A SG11201505057R A SG 11201505057RA SG 11201505057R A SG11201505057R A SG 11201505057RA SG 11201505057R A SG11201505057R A SG 11201505057RA SG 11201505057R A SG11201505057R A SG 11201505057RA
Authority
SG
Singapore
Prior art keywords
semiconductor device
power applications
applications
power
semiconductor
Prior art date
Application number
SG11201505057RA
Inventor
Krishna Kumar Manippady
Dolmanan Surani Bin
Kaixin Vivian Lin
Hui Ru Tan
Sudhiranjan Tripathy
Original Assignee
Agency Science Tech & Res
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency Science Tech & Res filed Critical Agency Science Tech & Res
Priority to SG11201505057RA priority Critical patent/SG11201505057RA/en
Publication of SG11201505057RA publication Critical patent/SG11201505057RA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Ceramic Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Junction Field-Effect Transistors (AREA)
SG11201505057RA 2012-12-26 2013-12-23 A semiconductor device for high-power applications SG11201505057RA (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SG11201505057RA SG11201505057RA (en) 2012-12-26 2013-12-23 A semiconductor device for high-power applications

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SG2012095600 2012-12-26
PCT/SG2013/000547 WO2014104973A1 (en) 2012-12-26 2013-12-23 A semiconductor device for high-power applications
SG11201505057RA SG11201505057RA (en) 2012-12-26 2013-12-23 A semiconductor device for high-power applications

Publications (1)

Publication Number Publication Date
SG11201505057RA true SG11201505057RA (en) 2015-07-30

Family

ID=54063250

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201705301QA SG10201705301QA (en) 2012-12-26 2013-12-23 A semiconductor device for high-power applications
SG11201505057RA SG11201505057RA (en) 2012-12-26 2013-12-23 A semiconductor device for high-power applications

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG10201705301QA SG10201705301QA (en) 2012-12-26 2013-12-23 A semiconductor device for high-power applications

Country Status (3)

Country Link
US (2) US10546949B2 (en)
SG (2) SG10201705301QA (en)
WO (1) WO2014104973A1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG10201705301QA (en) 2012-12-26 2017-07-28 Agency Science Tech & Res A semiconductor device for high-power applications
GB201514542D0 (en) 2015-08-14 2015-09-30 Thomas Simon C S A method of producing graphene
TW201718930A (en) * 2015-09-04 2017-06-01 南洋理工大學 Method of manufacturing a substrate with reduced threading dislocation density
DE102016203298B3 (en) * 2016-03-01 2017-03-23 Nasp Iii/V Gmbh Method for characterizing semiconductor materials
JP6925117B2 (en) 2016-11-18 2021-08-25 エア・ウォーター株式会社 Manufacturing method of compound semiconductor substrate and compound semiconductor substrate
JP6903857B2 (en) * 2017-06-02 2021-07-14 住友電工デバイス・イノベーション株式会社 Semiconductor substrate manufacturing method
JP7279552B2 (en) 2019-07-11 2023-05-23 信越半導体株式会社 Substrate for electronic device and manufacturing method thereof
CN113257909A (en) * 2021-04-26 2021-08-13 中国科学院上海微系统与信息技术研究所 Silicon On Insulator (SOI) -based gallium nitride (GaN) wafer and preparation method thereof

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6649287B2 (en) * 2000-12-14 2003-11-18 Nitronex Corporation Gallium nitride materials and methods
US20050006639A1 (en) * 2003-05-23 2005-01-13 Dupuis Russell D. Semiconductor electronic devices and methods
SG124417A1 (en) 2005-02-02 2006-08-30 Agency Science Tech & Res Method and structure for fabricating III-V nitridelayers on silicon substrates
JP5383974B2 (en) 2006-12-27 2014-01-08 住友電工デバイス・イノベーション株式会社 Semiconductor substrate and semiconductor device
US7960292B2 (en) * 2009-05-02 2011-06-14 Atomic Energy Council-Institute Of Nuclear Energy Research Method of fabricating zinc oxide film having matching crystal orientation to silicon substrate
GB2485418B (en) * 2010-11-15 2014-10-01 Dandan Zhu Semiconductor materials
JP5781292B2 (en) * 2010-11-16 2015-09-16 ローム株式会社 Nitride semiconductor device and nitride semiconductor package
US8957454B2 (en) * 2011-03-03 2015-02-17 International Rectifier Corporation III-Nitride semiconductor structures with strain absorbing interlayer transition modules
SG10201705301QA (en) 2012-12-26 2017-07-28 Agency Science Tech & Res A semiconductor device for high-power applications

Also Published As

Publication number Publication date
US10763348B2 (en) 2020-09-01
SG10201705301QA (en) 2017-07-28
US20150357451A1 (en) 2015-12-10
WO2014104973A1 (en) 2014-07-03
US20200105915A1 (en) 2020-04-02
US10546949B2 (en) 2020-01-28

Similar Documents

Publication Publication Date Title
TWI562361B (en) Semiconductor device
EP2824703A4 (en) Semiconductor device
EP2908338A4 (en) Semiconductor device
SG10201610711UA (en) Semiconductor device
EP2814059A4 (en) Semiconductor device
SG11201504940RA (en) Semiconductor device
EP2804212A4 (en) Semiconductor device
EP2866250A4 (en) Semiconductor device
EP2858110A4 (en) Power semiconductor device
EP2814060A4 (en) Semiconductor device
EP2717300A4 (en) Semiconductor device
EP2704189A4 (en) Semiconductor device
EP2827364A4 (en) Semiconductor device
EP2922092A4 (en) Semiconductor device
GB201506501D0 (en) Semiconductor device
EP2720263A4 (en) Semiconductor device
TWI560880B (en) Semiconductor device
EP2822039A4 (en) Semiconductor device
EP2887401A4 (en) Semiconductor device
EP2672516A4 (en) Semiconductor device
HK1243823A1 (en) Semiconductor device
EP2790323A4 (en) Semiconductor device
SG10201705301QA (en) A semiconductor device for high-power applications
EP2940726A4 (en) Semiconductor device
EP2871676A4 (en) Semiconductor device